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1.发明授权Method for producing an ultra-thin dielectric for microelectronics applications 失效一种用于制造用于微电子应用的超薄介电过程。
公开(公告)号：EP0418468B1
公开(公告)日：1995-01-25
申请号：EP90109000.1
申请日：1990-05-12
IPC分类号： H01L21/314 , C23C16/34 , C23C16/40
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/3144 , H01L29/513 , H01L29/518
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公开(公告)号：EP0170848B1
公开(公告)日：1990-11-07
申请号：EP85107740.4
申请日：1985-06-24
IPC分类号： H01L21/268 , H01L21/28
CPC分类号： H01L21/28185 , H01L21/2686 , H01L21/28202 , H01L29/518 , Y10S148/004 , Y10S438/91
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公开(公告)号：EP0170848A3
公开(公告)日：1987-07-01
申请号：EP85107740
申请日：1985-06-24
IPC分类号： H01L21/268 , H01L21/28
CPC分类号： H01L21/28185 , H01L21/2686 , H01L21/28202 , H01L29/518 , Y10S148/004 , Y10S438/91
摘要： Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including enhanced dielectric break-down of MOS insulating layers and reduced trapping of holes by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing oxygen gas, to heating radiation from a halogen lamp for a duration on the order of 100 seconds to achieve annealing temperature on the order of 1000C. For reduced hole trapping, the ambient gas is oxygen and the annealing temperature is on the order of 1000C for a duration on the order of 100 seconds, depending on the oxide thickness. Nitrogen, occurring at the silicon-silicon dioxide interface as a result of previous processing including a long anneal in nitrogen, increases the improvement of the silicon dioxide by the subsequent rapid thermal annealing in oxygen.
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公开(公告)号：EP0082936B1
公开(公告)日：1988-06-01
申请号：EP82109885.2
申请日：1982-10-26
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公开(公告)号：EP0082936A3
公开(公告)日：1985-10-09
申请号：EP82109885
申请日：1982-10-26
摘要： The device comprises a single crystal floating electrode (32) of undoped silicon, two dual electron injector structures (33, 34), two injector electrodes (31), a control electrode (35) and a sense electrode (36). Each structure (33, 34) comprises two silicon-rich silicon dioxide layers sandwiching a layer of silicon dioxide. The outer electrodes can be for example doped polysilicon. The capacitance of the device is varied by changing the number of electrons present in the floating electrode using the electrodes (31) and the structures (33, 34). Readout uses electrodes (35, 36).
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6.发明公开Method for producing an ultra-thin dielectric for microelectronics applications 失效Verfahren zur Herstellung einesultradünnenDielektrikumsfürmikroelektronische Verwendung。
公开(公告)号：EP0418468A1
公开(公告)日：1991-03-27
申请号：EP90109000.1
申请日：1990-05-12
IPC分类号： H01L21/314 , C23C16/34 , C23C16/40
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/3144 , H01L29/513 , H01L29/518
摘要： A system for fabricating an ultra-thin composite dielectric, usable for the capacitor in DRAM and in other integrated circuits, involving the deposition, a LPCVD tube, of a nitride (3) in situ on a very thin LPCVD oxide (2). By re-oxidizing the nitride (3) or depositing a LPCVD oxide layer (4, 4′) in situ thereon, a composite ONO dielectric, having very low defect density and good overall electric properties, of less than 10 nm in thickness and as low as 4.5 nm, may be formed.
摘要翻译： 一种制造用于DRAM和其它集成电路中的电容器的超薄复合电介质的系统，涉及在非常薄的LPCVD氧化物（2）上原位沉积氮化物（3）的LPCVD管。 通过在其上原位氧化氮化物（3）或沉积LPCVD氧化物层（4,4min），复合ONO电介质具有非常低的缺陷密度和良好的整体电性能，厚度小于10nm，并且为 低至4.5nm。
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公开(公告)号：EP0170848A2
公开(公告)日：1986-02-12
申请号：EP85107740.4
申请日：1985-06-24
IPC分类号： H01L21/268 , H01L21/28
CPC分类号： H01L21/28185 , H01L21/2686 , H01L21/28202 , H01L29/518 , Y10S148/004 , Y10S438/91
摘要： Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including enhanced dielectric break-down of MOS insulating layers and reduced trapping of holes by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing oxygen gas, to heating radiation from a halogen lamp for a duration on the order of 100 seconds to achieve annealing temperature on the order of 1000C.
For reduced hole trapping, the ambient gas is oxygen and the annealing temperature is on the order of 1000C for a duration on the order of 100 seconds, depending on the oxide thickness.
Nitrogen, occurring at the silicon-silicon dioxide interface as a result of previous processing including a long anneal in nitrogen, increases the improvement of the silicon dioxide by the subsequent rapid thermal annealing in oxygen.-
公开(公告)号：EP0082936A2
公开(公告)日：1983-07-06
申请号：EP82109885.2
申请日：1982-10-26
摘要： The device comprises a single crystal floating electrode (32) of undoped silicon, two dual electron injector structures (33, 34), two injector electrodes (31), a control electrode (35) and a sense electrode (36). Each structure (33, 34) comprises two silicon-rich silicon dioxide layers sandwiching a layer of silicon dioxide. The outer electrodes can be for example doped polysilicon. The capacitance of the device is varied by changing the number of electrons present in the floating electrode using the electrodes (31) and the structures (33, 34). Readout uses electrodes (35, 36).
摘要翻译： 该器件包括未掺杂硅的单晶浮动电极（32），两个双电子注入器结构（33,34），两个注入电极（31），控制电极（35）和检测电极（36）。 每个结构（33,34）包括夹着二氧化硅层的两个富含硅的二氧化硅层。 外部电极可以是例如掺杂的多晶硅。 通过使用电极（31）和结构（33,34）改变浮动电极中存在的电子数来改变器件的电容。 读数使用电极（35,36）。
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