利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

38 条记录 (耗时 0.014 秒)

    Improved post-oxidation anneal of silicon dioxide
    1.
    发明公开
    Improved post-oxidation anneal of silicon dioxide 失效
    Nach der OxidationauszuführendesVergütungsverfahrenfürSiliziumdioxid。

    公开(公告)号：EP0264774A2

    公开(公告)日：1988-04-27

    申请号：EP87114912.6

    申请日：1987-10-13

    申请人： International Business Machines Corporation

    发明人： Hofmann, Karl ,  Rubloff, Gary Wayne ,  Young, Donald Reeder

    IPC分类号： H01L21/316 ,  C30B33/00

    CPC分类号： H01L21/28185 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28211 ,  H01L21/31662 ,  Y10S148/004 ,  Y10S438/909 ,  Y10S438/91

    摘要： The insulating and stability characteristics of silicon dioxide gate oxide insulator for field effect transistors are enhanced by subjecting the silicon dioxide to an annealing in an ambient that contains a gaseous oxygen-containing species in an amount sufficient to provide a partial pressure from the oxygen-containing material of about 1.33 × 10⁻⁹ bar to about 1.33 × 10⁻² bar during annealing temperatures of about 500°C to about 1200°C. Such is carried out for a time sufficient to enhance the insulating and stability characteristics of the silicon dioxide insulator.

    摘要翻译： 用于场效应晶体管的二氧化硅栅极氧化物绝缘体的绝缘和稳定特性通过使二氧化硅在含有气态含氧物质的环境中进行退火而得到增强，其含量足以提供来自含氧的 在约500℃至约1200℃的退火温度下，约1.33×10 -9巴至约1.33×10 -2巴的材料。进行足够的时间以增强 二氧化硅绝缘体的绝缘和稳定特性。

    Thermal annealing of integrated circuits
    8.
    发明公开
    Thermal annealing of integrated circuits 失效
    集成电路的热退火

    公开(公告)号：EP0170848A3

    公开(公告)日：1987-07-01

    申请号：EP85107740

    申请日：1985-06-24

    申请人： International Business Machines Corporation

    发明人： Weinberg, Zeev Avraham ,  Young, Donald Reeder

    IPC分类号： H01L21/268 ,  H01L21/28

    CPC分类号： H01L21/28185 ,  H01L21/2686 ,  H01L21/28202 ,  H01L29/518 ,  Y10S148/004 ,  Y10S438/91

    摘要： Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including enhanced dielectric break-down of MOS insulating layers and reduced trapping of holes by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing oxygen gas, to heating radiation from a halogen lamp for a duration on the order of 100 seconds to achieve annealing temperature on the order of 1000C. For reduced hole trapping, the ambient gas is oxygen and the annealing temperature is on the order of 1000C for a duration on the order of 100 seconds, depending on the oxide thickness. Nitrogen, occurring at the silicon-silicon dioxide interface as a result of previous processing including a long anneal in nitrogen, increases the improvement of the silicon dioxide by the subsequent rapid thermal annealing in oxygen.

    PROCESS FOR MANUFACTURING A GALLIUM RICH GALLIUM NITRIDE FILM
    10.
    发明公开
    PROCESS FOR MANUFACTURING A GALLIUM RICH GALLIUM NITRIDE FILM 有权
    用于生产镓GALLIUMNITRIDFILMS

    公开(公告)号：EP1551768A1

    公开(公告)日：2005-07-13

    申请号：EP03724623.8

    申请日：2003-05-19

    申请人： MACQUARIE UNIVERSITY

    发明人： BUTCHER, Kenneth Scott A.Macquarie Univ.Semicon. ,  TANSLEY, Trevor LionelMacquarie Univ.Semicon. ,  AFIFUDDINMacquarie Univ.Semicon.

    IPC分类号： C01G15/00 ,  C23C16/00 ,  C23C16/34

    CPC分类号： C30B29/406 ,  C01G15/00 ,  C01P2002/72 ,  C01P2004/03 ,  C23C16/0272 ,  C23C16/303 ,  C30B25/02 ,  C30B25/105 ,  C30B33/02 ,  Y10S148/004

    摘要： A process for the manufacture of a gallium rich gallium nitride film is described. The process comprises (a) preparing a reaction mixture containing a gallium species and a nitrogen species, the gallium species and the nitrogen species being selected such that, when they react with each other, gallium nitride is formed; and (b) growing the gallium rich gallium nitride film from the reaction mixture, by allowing the gallium species to react with the nitrogen species and to deposit gallium nitride on a substrate selected from the group consisting of silicon, glass, sapphire, quartz and crystalline materials having a lattice constant closely matched to gallium nitride, including zinc oxide, optionally with a zinc oxide buffer layer, at a temperature of from about 480 °C to about 900 °C and in the presence of a gaseous environment in which the partial pressure of oxygen is less than 10-4 Torr, wherein the ratio of gallium atoms to nitrogen atoms in the gallium rich gallium nitride film is from 1.01 to 1.20. The invention also provides the option of annealing the gallium rich gallium nitride film at a temperature of from about 20 °C to about 650 °C and for a time sufficient to decrease the resistivity of the film so that it becomes electrically conductive, for instance to a resistivity below 100 ohm.cm.