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1.发明公开Backmetal drain terminal with low stress and thermal resistance 审中-公开üstand stand stand ier ter stand stand stand stand stand stand stand stand stand stand
公开(公告)号：EP1063701A2
公开(公告)日：2000-12-27
申请号：EP00111300.0
申请日：2000-05-25
申请人： Intersil Corporation
IPC分类号： H01L23/482
CPC分类号： H01L29/7802 , H01L23/4827 , H01L29/456 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a source region and a gate disposed at the upper surface of a silicon substrate, which includes a drain region for the device. On the lower surface of the substrate is disposed a backmetal drain terminal comprising a stack that includes a first layer of tantalum and an outermost second layer of copper.
摘要翻译： 半导体器件包括源极区域和设置在硅衬底的上表面处的栅极，其包括用于器件的漏极区域。 在衬底的下表面上设置一个后金属漏极端子，该端子包括一个包括第一钽层和一个最外层铜层的堆叠。
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2.发明公开Backmetal drain terminal with low stress and thermal resistance 审中-公开以低电压和热阻Rückseitenmetallisierter漏极接触
公开(公告)号：EP1063701A3
公开(公告)日：2004-03-10
申请号：EP00111300.0
申请日：2000-05-25
申请人： Intersil Corporation
IPC分类号： H01L23/482
CPC分类号： H01L29/7802 , H01L23/4827 , H01L29/456 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a source region and a gate disposed at the upper surface of a silicon substrate, which includes a drain region for the device. On the lower surface of the substrate is disposed a backmetal drain terminal comprising a stack that includes a first layer of tantalum and an outermost second layer of copper.
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