公开(公告)号：EP2698808B1

公开(公告)日：2018-12-05

申请号：EP11863270.2

申请日：2011-09-09

申请人： Shindengen Electric Manufacturing Co., Ltd.

发明人： OHNO, Jun-ichi

IPC分类号： H01L21/04 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/329 ,  H01L21/331 ,  H01L21/336

CPC分类号： H01L21/76889 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/3065 ,  H01L23/4827 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A silicon carbide semiconductor device 100 of the present invention includes: a silicon carbide layer 110; a reaction layer 120 which is in contact with the silicon carbide layer 110; a conductive oxidation layer 130 which is in contact with the reaction layer 120; and an electrode layer 140 which is formed over the reaction layer 120 with the conductive oxidation layer 130 interposed therebetween. It is preferable that a thickness of the conductive oxidation layer 130 falls within a range of 0.3nm to 2.25nm. According to the silicon carbide semiconductor device 100 of the present invention, by forming the electrode layer 140 over the reaction layer 120 with the conductive oxidation layer 130 interposed therebetween instead of directly forming the electrode layer 140 on the reaction layer 120, contact resistance between the semiconductor base body and the electrode layer can be further reduced. According to the silicon carbide semiconductor device 100 of the present invention, the thickness of the conductive oxidation layer 130 falls within a range of 0.3nm to 2.25nm and hence, the contact resistance between the semiconductor base body and the electrode layer can be still further reduced.

公开(公告)号：EP3062341A2

公开(公告)日：2016-08-31

申请号：EP16157345.6

申请日：2016-02-25

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： FURUKAWA, Tomoyasu ,  SHIRAISHI, Masaki ,  NAKANO, Hiroshi ,  MORITA, Toshiaki

IPC分类号： H01L23/482 ,  H01L23/485 ,  H01L21/60 ,  H01L25/065 ,  H01L21/98 ,  H02M7/5387

CPC分类号： H02M7/537 ,  H01L21/283 ,  H01L21/78 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/50 ,  H01L29/45 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/039 ,  H01L2224/03901 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13387 ,  H01L2224/1403 ,  H01L2224/14131 ,  H01L2224/14135 ,  H01L2224/14154 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/29147 ,  H01L2224/29387 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/81447 ,  H01L2224/8184 ,  H01L2224/83065 ,  H01L2224/83203 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/01013 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/3511 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2224/03 ,  H01L2924/0541 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/1413 ,  H01L2224/1415 ,  H01L2224/03464 ,  H01L21/304 ,  H01L21/22

摘要： A semiconductor device (200, 300, 400) includes a semiconductor substrate (108, 208) in which a semiconductor element (150) is formed, an electrode structure (151, 202, 207) provided on a first surface (108d) of the semiconductor substrate (108, 208) to be electrically connected to the semiconductor element (150) and in which a first Al metal layer (105) composed of Al or Al alloy, a Cu diffusion-prevention layer (107) composed of e.g. Ti, TiN, TiW or W, a second Al metal layer (106) composed of Al or Al alloy and a Ni, Cu or Cu alloy layer (104) are formed in this order, and a conductive member (102) which is bonded to the electrode structure (151, 202, 207) via a sintered copper layer (103) disposed on a surface (104a) of the Ni, Cu or Cu alloy layer (104). In this semiconductor device, a crystal plane orientation of Al crystal grains on a surface (106a) of the second Al metal layer (106) is principally on the (110) plane. The semiconductor device (200) may comprise a second electrode structure (152) on the second surface (108e) of the semiconductor substrate (108), also formed of the layers (105), (107), (106) and (104) and bonded to a conductive member (102) via a sintered copper layer (103). Alternatively, the semiconductor device (300, 400) may comprise a plurality of semiconductor elements such as transistors, diodes and resistive elements formed on a semiconductor LSI chip (201, 205, 206) and a plurality of input/output electrode pads (202, 207) each formed of the layers (105), (107), (106) and (104). The LSI chip (201, 205, 206) may be bonded to another semiconductor LSI chip (205, 206), also having electrode pads (202, 207) formed of the layers (105), (107), (106) and (104), and/or to a conductive member (102) via a sintered copper layer (103).

摘要翻译： 一种半导体器件（200，300，400）包括设置在所述第一表面（108D）（108，208），其中的半导体元件（150）形成在半导体衬底，对电极结构（151，202，207） 半导体衬底（108,208）以电连接到半导体元件（150），并且其中EC组成Al或Al合金，Cu-扩散防止层（107）组成的第一Al金属层（105） Al或Al合金和镍，​​铜或铜合金层（104）组成的钛，氮化钛，TIW或W，第二Al的金属层（106）形成在该顺序和一个导电构件（102），其被键合 经由设置在所述的Ni，Cu或Cu合金层（104）的表面（104A）上的烧结铜层（103）的电极结构（151，202，207）。 在该半导体装置中，第二Al的金属层（106）的表面（106A）上的晶粒Al的晶面取向主要是在（110）平面。 的半导体器件（200）可包括第二电极结构（152）的半导体衬底（108）的第二表面（108E）上，如此形成的层（105）（107）（106）和（104） 并结合到经由烧结铜层（103）的导电性部件（102）。 可替代地，半导体器件（300，400）可包括半导体元件的多元性：如晶体管，二极管和形成的半导体LSI芯片（201，205，206）和输入/输出电极衬垫有多个（202上的电阻元件， （207）每个所形成的层105）（107）（106）和（104）组成。 LSI芯片（201，205，206）可键合到另一个半导体LSI芯片（205,206），所以具有电极焊盘（202，207）形成的层（105）（107）（106）和（ （104）和/或通过烧结铜层（103的导电构件102））。

公开(公告)号：EP2922087A1

公开(公告)日：2015-09-23

申请号：EP13855530.5

申请日：2013-11-13

申请人： Nissan Motor Co., Ltd ,  Sanken Electric Co., Ltd. ,  Fuji Electric Co., Ltd.

发明人： TANIMOTO, Satoshi ,  SATO, Shinji ,  TANISAWA, Hidekazu ,  MATSUI, Kohei

IPC分类号： H01L21/52

CPC分类号： H01L23/49513 ,  H01L21/4853 ,  H01L23/3735 ,  H01L23/4827 ,  H01L23/488 ,  H01L23/492 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/0345 ,  H01L2224/04026 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05639 ,  H01L2224/2732 ,  H01L2224/291 ,  H01L2224/29144 ,  H01L2224/32059 ,  H01L2224/3207 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32505 ,  H01L2224/7501 ,  H01L2224/75102 ,  H01L2224/75251 ,  H01L2224/75756 ,  H01L2224/83011 ,  H01L2224/83022 ,  H01L2224/83048 ,  H01L2224/83075 ,  H01L2224/8309 ,  H01L2224/83101 ,  H01L2224/8321 ,  H01L2224/83385 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83457 ,  H01L2224/83815 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/35121 ,  H01L2924/3651 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01027 ,  H01L2924/01015 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor device according to the present invention, having an Au-based solder layer (3) sandwiched between a semiconductor element (1) and a Cu substrate (2) made mainly of Cu, in which the semiconductor device includes: a dense metal film (23) which is arranged between the Cu substrate (2) and the Au-based solder layer (3), and has fine slits (24) patterned to have a predetermined shape in a plan view; and fine structures (4) with dumbbell-like cross section, which have Cu and Au as main elements, and are each buried in the Cu substrate (2), the Au-based solder layer (3), and the fine slits (24) of the dense metal film (23).

摘要翻译： 根据本发明的半导体器件，其具有夹在半导体元件（1）和主要由Cu制成的Cu衬底（2）之间的Au系焊料层（3），其中半导体器件包括致密的金属膜 （23），其布置在所述Cu基板（2）和所述Au基焊料层（3）之间，并且具有图案化以在平面图中具有预定形状的细缝隙（24） 和具有哑铃状横截面的精细结构（4），其具有Cu和Au作为主要元素，并且各自埋入Cu基底（2），Au基焊料层（3）和细缝隙（24） ）的致密金属膜（23）。

公开(公告)号：EP2586063B1

公开(公告)日：2014-04-30

申请号：EP11738048.5

申请日：2011-06-22

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： PEREIRA, Alexandre ,  DUCROS, Cédric ,  TEBBY, Zoé

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/0236

CPC分类号： B05D5/12 ,  H01L21/76838 ,  H01L23/4827 ,  H01L31/022466 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/03921 ,  H01L31/0749 ,  H01L31/1884 ,  H01L2924/0002 ,  Y02E10/541 ,  Y02P70/521 ,  Y10T428/24372 ,  Y10T428/24413 ,  Y10T428/24421 ,  H01L2924/00

公开(公告)号：EP2586063A1

公开(公告)日：2013-05-01

申请号：EP11738048.5

申请日：2011-06-22

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： PEREIRA, Alexandre ,  DUCROS, Cédric ,  TEBBY, Zoé

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/0236

CPC分类号： B05D5/12 ,  H01L21/76838 ,  H01L23/4827 ,  H01L31/022466 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/03921 ,  H01L31/0749 ,  H01L31/1884 ,  H01L2924/0002 ,  Y02E10/541 ,  Y02P70/521 ,  Y10T428/24372 ,  Y10T428/24413 ,  Y10T428/24421 ,  H01L2924/00

摘要： The invention relates to a substrate comprising at least one scattering film made of a transparent conductive oxide (TCO) and to a process for manufacturing such a substrate. It also relates to a solar cell comprising such a substrate. The substrate according to the invention comprises a layer of spherical particles made of a material chosen from dielectric and transparent conductive oxides, the layer being coated with a TCO film and the diameters of said spherical particles belonging to at least two populations of different diameters. The invention is applicable in particular to solar cells.

公开(公告)号：EP2517239A1

公开(公告)日：2012-10-31

申请号：EP10796036.1

申请日：2010-12-21

申请人： United Monolithic Semiconductors GmbH

发明人： JONSSON, Günter ,  STIEGLAUER, Hermann

IPC分类号： H01L23/48 ,  H01L23/00

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L23/4827 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/0231 ,  H01L2224/02371 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/0508 ,  H01L2224/051 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05548 ,  H01L2224/05561 ,  H01L2224/05644 ,  H01L2224/291 ,  H01L2224/32221 ,  H01L2224/83101 ,  H01L2224/834 ,  H01L2224/83815 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/04941 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/05552

摘要： The invention relates to an electronic component having a GaAs semiconductor substrate (HS), semiconductor components (BE) being implemented on the front side thereof, and the back side thereof having a multilayer backside metallization (RM), wherein an advantageous construction of the layer sequence of the backside metallization is proposed, the backside metallization in particular comprising an Au layer as a bonding layer.

公开(公告)号：EP1900853A1

公开(公告)日：2008-03-19

申请号：EP06766681.8

申请日：2006-06-14

申请人： Nippon Mining & Metals Co., Ltd.

发明人： SHINDO, Yuichiro c/o Isohara Factory of Nippon Min ,  TAKEMOTO, Kouichi c/o Isohara Factory of Nippon Mi

IPC分类号： C25C1/14 ,  C22B25/08 ,  C22C13/00

CPC分类号： C22B25/04 ,  C22B13/06 ,  C22B25/08 ,  C22C13/00 ,  C22F1/16 ,  C25C1/14 ,  C25F1/04 ,  H01L23/4827 ,  H01L2224/13111 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2224/0401

摘要： Provided is high purity tin or tin alloy wherein the respective contents of U and Th are 5ppb or less, the respective contents of Pb and Bi are 1 ppm or less, and the purity is 5N or higher (provided that this excludes the gas components of O, C, N, H, S and P). This high purity tin or tin alloy is characterized in that the α ray count of high purity tin having a cast structure is 0.001 cph/cm 2 or less. Since recent semiconductor devices are densified and are of large capacity, there is considerable risk of a soft error occurring due to the influence of the α ray from materials in the vicinity of the semiconductor chip. In particular, there are strong demands for purifying the soldering material or tin to be used in the vicinity of semiconductor devices, as well as for materials with fewer α rays. Thus, the present invention aims to provide high purity tin or tin alloy and the manufacturing method of such high purity tin by reducing the α dose of tin so as to be adaptable as the foregoing material.

摘要翻译： 提供U和Th的各自含量为5ppb以下的高纯度锡或锡合金，Pb和Bi的各自的含量为1ppm以下，纯度为5N以上（只要不排除气体成分 O，C，N，H，S和P）。 该高纯度锡或锡合金的特征在于具有铸造结构的高纯度锡的±射线计数为0.001cph / cm 2以下。 由于最近的半导体器件致密化并且容量大，所以存在由于半导体芯片附近的材料的±射线的影响而产生软错误的相当大的风险。 特别是对半导体器件附近使用的焊接材料或锡的纯化以及±射线少的材料的要求较高。 因此，本发明的目的在于提供高纯度的锡或锡合金以及通过减少锡的剂量来适应这种高纯度锡的制造方法。

公开(公告)号：EP1176639B1

公开(公告)日：2007-06-20

申请号：EP00116427.6

申请日：2000-07-28

申请人： Infineon Technologies AG

发明人： Hübner, Holger, Dr. ,  Kripesh, Vaidyana Than, Dr.

IPC分类号： H01L23/482 ,  H01L21/60

CPC分类号： H01L24/81 ,  H01L23/4827 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19043

公开(公告)号：EP1162661B1

公开(公告)日：2006-09-27

申请号：EP00830407.3

申请日：2000-06-06

申请人： STMicroelectronics S.r.l.

发明人： Murari, Bruno ,  Mastromatteo, Ubaldo ,  Vigna, Benedetto

IPC分类号： H01L23/58 ,  H01L23/36 ,  H01L23/31

CPC分类号： H01L24/01 ,  H01L23/3157 ,  H01L23/36 ,  H01L23/3735 ,  H01L23/4827 ,  H01L2224/274 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082

公开(公告)号：EP1063701A3

公开(公告)日：2004-03-10

申请号：EP00111300.0

申请日：2000-05-25

申请人： Intersil Corporation

发明人： Grebs, Thomas ,  Spindler, Jeffrey ,  Lauffer, Jeffrey ,  Ridley, Rodney, Sr. ,  Cumbo, Joseph

IPC分类号： H01L23/482

CPC分类号： H01L29/7802 ,  H01L23/4827 ,  H01L29/456 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a source region and a gate disposed at the upper surface of a silicon substrate, which includes a drain region for the device. On the lower surface of the substrate is disposed a backmetal drain terminal comprising a stack that includes a first layer of tantalum and an outermost second layer of copper.