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8 条记录 (耗时 0.013 秒)

    Patterning of doped poly-silicon gates
    1.
    发明公开
    Patterning of doped poly-silicon gates 有权
    Strukturierung dotierter Polysilizium-Gates

    公开(公告)号：EP1916708A2

    公开(公告)日：2008-04-30

    申请号：EP07119098.7

    申请日：2007-10-23

    申请人： Interuniversitair Microelektronica Centrum (IMEC)

    发明人： Demand, Marc ,  Shamiryan, Denis ,  Paraschiv, Vasile

    IPC分类号： H01L21/3213

    CPC分类号： H01L21/32134 ,  H01L21/26506 ,  H01L21/28035 ,  H01L21/28088 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32155

    摘要： The present invention relates to a method for the patterning of a stack comprising elements that do not form volatile compounds during conventional reactive ion etching. More specifically said element(s) are Lanthanide elements such as Ytterbium (Yb) and the patterning preferably relates to the dry etching of silicon and/or germanium comprising structures (e.g. gates) doped with a Lanthanide e.g. Ytterbium (Yb doped gates). In case said silicon and/or germanium comprising structure is a gate electrode the silicon and/or germanium is doped with a Lanthanide (e.g. Yb) for modeling the work function of a gate electrode.

    摘要翻译： 本发明涉及用于图案化叠层的方法，其包括在常规反应离子蚀刻期间不形成挥发性化合物的元件。 更具体地说，所述元素是镧系元素如镱（Yb），并且图案化优选涉及包含掺杂有镧系元素的硅和/或锗的包括结构（例如栅极）的干蚀刻，例如。 镱（Yb掺杂栅极）。 在所述硅和/或锗包含结构是栅电极的情况下，硅和/或锗掺杂有用于对栅电极的功函数进行建模的镧系元素（例如Yb）。

    Selective removal of rare earth comprising materials in a semiconductor device
    3.
    发明公开
    Selective removal of rare earth comprising materials in a semiconductor device 有权
    Selektive Entfernung von seltenerdenthaltenden Stoffen in einer Halbleitervorrichtung

    公开(公告)号：EP1923910A2

    公开(公告)日：2008-05-21

    申请号：EP07119093.8

    申请日：2007-10-23

    申请人： Interuniversitair Microelektronica Centrum (IMEC)

    发明人： Shamiryan, Denis ,  Demand, Marc ,  Paraschiv, Vasile

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/32134 ,  H01L21/26506 ,  H01L21/28035 ,  H01L21/28088 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32155

    摘要： The present invention discloses a method for the selective removal of rare earth based high-k materials such as rare earth scandate high-k materials (e.g. DyScO 3 ) over silicon or silicon dioxide. As an example Dy and Sc comprising high-k materials are used as a high-k material in gate stacks of a semiconductor device. The selective removal and etch of this high-k material is very difficult since Dy and Sc (and their oxides) are difficult to etch. The etching could however be easily stopped on them. The Dy and Sc chlorides are not volatile, but they are water soluble. This behavior makes it possible that the surface layer of Dy and Sc comprising high-k materials gets chlorinated during exposure to the Cl-containing plasma and can be removed after etch by a water rinse.

    摘要翻译： 本发明公开了一种在硅或二氧化硅上选择性除去稀土类高k材料如稀土钪酸盐高k材料（如DyScO 3）的方法。 作为示例，使用包含高k材料的Dy和Sc作为半导体器件的栅叠层中的高k材料。 这种高k材料的选择性去除和蚀刻是非常困难的，因为Dy和Sc（及其氧化物）难以蚀刻。 然而，蚀刻可以容易地停止在它们上。 Dy和Sc氯化物不挥发，但它们是水溶性的。 这种行为使得包含高k材料的Dy和Sc的表面层可能在暴露于含Cl的等离子体期间被氯化，并且可以通过水冲洗在蚀刻后除去。

    A plasma composition for the selective etching of high-k materials
    4.
    发明公开
    A plasma composition for the selective etching of high-k materials 审中-公开
    血浆组合物具有高介电常数的介电层的选择性蚀刻

    公开(公告)号：EP1780780A2

    公开(公告)日：2007-05-02

    申请号：EP06123197.3

    申请日：2006-10-30

    申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC)

    发明人： Shamiryan, Denis ,  Paraschiv, Vasile ,  Demand, Marc

    IPC分类号： H01L21/311

    CPC分类号： H01L21/32136 ,  H01L21/2807 ,  H01L21/28088 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

    摘要： The present invention relates to a method for the selective removal of a high-k layer such as HfO 2 over silicon or silicon dioxide.
    More specifically a method for etching high-k selectively over silicon and silicon dioxide and a plasma composition for performing said selective etch process is disclosed.
    Using a BCl 3 plasma with well defined concentrations of nitrogen makes it possible to etch high-k with at a reasonable etch rate while silicon and silicon dioxide have an etch rate of almost zero.

    摘要翻译： 本发明涉及一种用于选择性地去除高k层的方法：如在的HfO 2硅或二氧化硅。 更具体地，用于选择性地在硅和二氧化硅以及用于执行所述选择性蚀刻工艺的等离子体蚀刻组合物的高k的方法游离缺失盘。 使用的BCl 3等离子体用氮气的良好限定的浓度使得有可能以合理的蚀刻速率蚀刻高k带，而硅和二氧化硅具有蚀刻的几乎为零速率。

    A plasma for patterning advanced gate stacks
    5.
    发明公开
    A plasma for patterning advanced gate stacks 审中-公开
    Verfahren zum Plasma-Ätzenvon Gatterstappelung

    公开(公告)号：EP1780779A2

    公开(公告)日：2007-05-02

    申请号：EP06121143.9

    申请日：2006-09-22

    申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC)

    发明人： Shamiryan, Denis ,  Paraschiv, Vasile ,  Demand, Marc ,  Boullart, Werner

    IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/3065

    CPC分类号： H01L21/32136 ,  H01L21/2807 ,  H01L21/28088 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

    摘要： The present invention relates to plasma composition and its use in a method for the dry etching of a stack of at least one material chemically too reactive towards the use of a Cl-based plasma.
    Small amounts of nitrogen (5% up to 10%) can be added to a BCl 3 comprising plasma and used in an anisotropical dry etching method whereby a passivation film is deposited onto the vertical sidewalls of stack etched for protecting the vertical sidewalls from lateral attack such that straight profiles can be obtained.

    摘要翻译： 本发明涉及等离子体组合物及其在用于干法蚀刻至少一种在使用基于Cl的等离子体时化学反应性的材料的堆叠方法中的用途。 可以将少量氮（5％至10％）加入到包含等离子体的BCl 3中并用于各向异性热蚀干法蚀刻方法中，由此钝化膜沉积在蚀刻的堆叠的垂直侧壁上以保护垂直侧壁免受横向攻击 使得可以获得直的轮廓。