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1.发明公开Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing 审中-公开用于化学机械抛光，化学 - 机械抛光的方法，半导体器件和材料的生产过程中的水分散体用于制备的水分散体
公开(公告)号：EP1416025A1
公开(公告)日：2004-05-06
申请号：EP03024809.0
申请日：2003-10-30
发明人： Nishimoto, Kazuo , Sakano, Tatsuaki , Takemura, Akihiro , Hattori, Masayuki , Kawahashi, Nobuo , Miyashita, Naoto , Shigeta, Atsushi , Matsui, Yoshitaka , Ida, Kazuhiko
IPC分类号： C09G1/02 , H01L21/321
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/02024
摘要： Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device.
A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium.
The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.摘要翻译： 在用于化学机械抛光wässrige分散体是通过在wässrige介质的水溶性季铵盐，无机酸和磨粒混入得到。 因此独立权利要求中包括了：（1）化学机械抛光工艺包括抛光与分散体的表面; （2）用于制造半导体装置，其包括抛光上与分散体半导电衬底的表面的方法; 和（3）用于制备水性分散体，其包括第一和第二wässrige分散材料的材料。
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公开(公告)号：EP0773269A3
公开(公告)日：1997-10-08
申请号：EP96118201.1
申请日：1996-11-13
IPC分类号： C09G1/02 , H01L21/306
CPC分类号： C09G1/02 , B24B37/04 , H01L21/31053 , H01L21/32
摘要： A polishing slurry for use in chemical mechanical polishing is disclosed. The polishing slurry contains a solvent and polishing particles dispersed in this solvent. The polishing particles are selected from silicon nitride, silicon carbide, and graphite. The primary particle size of the polishing particles dispersed in the solvent is appropriately 0.01 to 1000 nm. When the polishing particles are colloidally dispersed in the solvent, the secondary particle size of the polishing particles is appropriately 60 to 300 nm.
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公开(公告)号：EP0673058A2
公开(公告)日：1995-09-20
申请号：EP95109108.1
申请日：1989-03-31
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A semiconductor manufacturing apparatus comprising a furnace (7, 8, 14) accommodating a boat (15) which carries wafers (10) is maintained with a temperature flat area in the furnace. Mixed gas is supplied from a mixing nozzle (21) at a temperature which is lower than the temperature of the temperature flat area to flow over the wafers from positions adjacent the wafers.
摘要翻译： 一种半导体制造装置，包括容纳具有晶片（10）的船（15）的炉（7,8,14），其在炉中保持温度平坦的区域。 从混合喷嘴（21）以比温度平坦区域的温度低的温度供应混合气体，以从晶片上邻近晶片的位置流出。
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公开(公告)号：EP0673058A3
公开(公告)日：1995-10-11
申请号：EP95109108.1
申请日：1989-03-31
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A semiconductor manufacturing apparatus comprising a furnace (7, 8, 14) accommodating a boat (15) which carries wafers (10) is maintained with a temperature flat area in the furnace. Mixed gas is supplied from a mixing nozzle (21) at a temperature which is lower than the temperature of the temperature flat area to flow over the wafers from positions adjacent the wafers.
摘要翻译： 包括容纳承载晶片（10）的舟皿（15）的炉子（7,8,14）的半导体制造设备在炉内保持有温度平坦区域。 混合气体以低于温度平坦区域的温度的温度从混合喷嘴（21）供应，以从邻近晶片的位置流过晶片。
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公开(公告)号：EP0777266B1
公开(公告)日：2002-02-13
申请号：EP96118198.9
申请日：1996-11-13
IPC分类号： H01L21/306 , H01L21/3105 , B24B37/04
CPC分类号： B24B37/04 , C09G1/02 , H01L21/31053 , H01L21/32 , Y10S438/97
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公开(公告)号：EP0773269B1
公开(公告)日：2002-02-13
申请号：EP96118201.1
申请日：1996-11-13
IPC分类号： C09G1/02 , H01L21/306
CPC分类号： C09G1/02 , B24B37/04 , H01L21/31053 , H01L21/32
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7.发明公开Polishing method, semiconductor device fabrication method, and semiconductor fabrication apparatus 失效Polierverfahren，Halbleitereinrichtung，Herstellungsverfahren undHalbleiterherstellungsgerät
公开(公告)号：EP0777266A1
公开(公告)日：1997-06-04
申请号：EP96118198.9
申请日：1996-11-13
IPC分类号： H01L21/306 , H01L21/3105 , B24B37/04
CPC分类号： B24B37/04 , C09G1/02 , H01L21/31053 , H01L21/32 , Y10S438/97
摘要： Chemical mechanical polisher is disclosed. A polishing slurry stored in a polishing slurry tank (41), used in this polishing contains a solvent and polishing particles dispersed in the solvent. The polishing particles are selected from silicon nitride, silicon carbide, and graphite. The material (6, 12, 16) to be polished is polished by using this polishing slurry.
摘要翻译： 公开了化学机械抛光机。 在该抛光中使用的研磨浆料槽（41）中储存的研磨浆料含有分散在溶剂中的溶剂和研磨粒子。 抛光颗粒选自氮化硅，碳化硅和石墨。 通过使用该抛光浆料抛光待抛光的材料（6,12,16）。
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公开(公告)号：EP0773269A2
公开(公告)日：1997-05-14
申请号：EP96118201.1
申请日：1996-11-13
IPC分类号： C09G1/02 , H01L21/306
CPC分类号： C09G1/02 , B24B37/04 , H01L21/31053 , H01L21/32
摘要： A polishing slurry for use in chemical mechanical polishing is disclosed. The polishing slurry contains a solvent and polishing particles dispersed in this solvent. The polishing particles are selected from silicon nitride, silicon carbide, and graphite. The primary particle size of the polishing particles dispersed in the solvent is appropriately 0.01 to 1000 nm. When the polishing particles are colloidally dispersed in the solvent, the secondary particle size of the polishing particles is appropriately 60 to 300 nm.
摘要翻译： 公开了用于化学机械抛光的抛光浆料。 抛光浆包含溶剂和分散在该溶剂中的抛光颗粒。 抛光颗粒选自氮化硅，碳化硅和石墨。 分散于溶剂中的研磨粒子的一次粒径为0.01〜1000nm。 当抛光颗粒在溶剂中胶体分散时，抛光颗粒的二次粒径适当地为60-300nm。
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