公开(公告)号：EP3118906B1

公开(公告)日：2018-08-22

申请号：EP15761845.5

申请日：2015-03-06

申请人： Japan Science and Technology Agency

发明人： SUGAHARA, Satoshi ,  SHUTO, Yusuke ,  KUROSAWA, Minoru ,  FUNAKUBO, Hiroshi ,  YAMAMOTO, Shuichiro

IPC分类号： H01L49/00 ,  G11C14/00 ,  H03K3/356 ,  H01L27/22 ,  H01L27/24 ,  G11C11/16

CPC分类号： H01L49/00 ,  G11C11/16 ,  G11C14/0081 ,  G11C14/009 ,  H01L27/226 ,  H01L27/2436 ,  H03K3/356

摘要： Provided is a transistor including: a piezoresistor 10 through which carriers conduct; a source 14 that injects the carriers into the piezoresistor; a drain 16 that receives the carriers from the piezoresistor; a piezoelectric material 12 that is located so as to surround the piezoresistor and applies a pressure to the piezoresistor; and a gate 18 that applies a voltage to the piezoelectric material applies so that the piezoelectric material applies a pressure to the piezoresistor.

公开(公告)号：EP3118906A1

公开(公告)日：2017-01-18

申请号：EP15761845.5

申请日：2015-03-06

申请人： Japan Science and Technology Agency

发明人： SUGAHARA, Satoshi ,  SHUTO, Yusuke ,  KUROSAWA, Minoru ,  FUNAKUBO, Hiroshi ,  YAMAMOTO, Shuichiro

IPC分类号： H01L45/00 ,  G11C11/15 ,  G11C13/00 ,  H03K3/356

CPC分类号： H01L49/00 ,  G11C11/16 ,  G11C14/0081 ,  G11C14/009 ,  H01L27/226 ,  H01L27/2436 ,  H03K3/356

摘要： Provided is a transistor including: a piezoresistor 10 through which carriers conduct; a source 14 that injects the carriers into the piezoresistor; a drain 16 that receives the carriers from the piezoresistor; a piezoelectric material 12 that is located so as to surround the piezoresistor and applies a pressure to the piezoresistor; and a gate 18 that applies a voltage to the piezoelectric material applies so that the piezoelectric material applies a pressure to the piezoresistor.

摘要翻译： 提供一种晶体管，包括：载流子导体通过的压电电阻器10; 将载流子注入到压电电阻器中的源极14; 漏极16，其从压电电阻器接收载流子; 定位成围绕压电电阻并对压敏电阻施加压力的压电材料12; 并且施加向压电材料施加电压的栅极18，使得压电材料向压电电阻器施加压力。