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    Process for recovering substrates
    1.
    发明公开
    Process for recovering substrates 失效
    过程用于衬底的回收

    公开(公告)号：EP0774776A3

    公开(公告)日：1998-03-25

    申请号：EP96115840.9

    申请日：1996-10-02

    申请人： KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. ,  Kobe Precision Inc.

    发明人： Takada, Satoru ,  Inoue, Hidetoshi ,  Hara, Yoshihiro

    IPC分类号： H01L21/30

    CPC分类号： H01L21/02032 ,  B24B9/065 ,  B24B21/00 ,  B24B37/04 ,  H01L21/02079 ,  H01L21/30

    摘要： A process comprising removing surface layer materials from the wafer by inducing micro-fractures in the surface using a rotating pad and an abrasive slurry until all of the surface layer materials are removed; and chemically etching the surfaces of the wafer until all micro-fractures are removed therefrom. Edge materials are removed by abrasive tape. Wafer thickness reduction during recycling is less than 30 microns per cycle. One of the front and back surfaces of the wafer substrate is polished, any dots or grooves being on the non-polished side. The abrasive slurry contains more than 6 volume percent abrasive particles, and the abrasive slurry has a viscosity greater than about 2 cP. The preferred pad comprises an organic polymer having a hardness greater than about 45 on the Shore D scale, optimally a polyurethane. The pressure of the pad against the wafer surface preferably does not exceed about 3 psi. Preferably, the chemical etching solution contains potassium hydroxide. An acidic solution can then be applied to the wafer surface. The reclaimed silicon wafer has a matted side having etch pits which does not exceed 20 microns in width, an average roughness not exceeding 0.5 microns and a peak-to-valley roughness not exceeding 5 microns. Any laser markings from the original wafer are present on the matted side of the wafer.

    Process for recovering substrates
    3.
    发明公开
    Process for recovering substrates 失效
    Verfahren zurRückgewinnungvon Substraten

    公开(公告)号：EP0774776A2

    公开(公告)日：1997-05-21

    申请号：EP96115840.9

    申请日：1996-10-02

    申请人： KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. ,  Kobe Precision Inc.

    发明人： Takada, Satoru ,  Inoue, Hidetoshi ,  Hara, Yoshihiro

    IPC分类号： H01L21/30

    CPC分类号： H01L21/02032 ,  B24B9/065 ,  B24B21/00 ,  B24B37/04 ,  H01L21/02079 ,  H01L21/30

    摘要： A process comprising removing surface layer materials from the wafer by inducing micro-fractures in the surface using a rotating pad and an abrasive slurry until all of the surface layer materials are removed; and chemically etching the surfaces of the wafer until all micro-fractures are removed therefrom. Edge materials are removed by abrasive tape. Wafer thickness reduction during recycling is less than 30 microns per cycle. One of the front and back surfaces of the wafer substrate is polished, any dots or grooves being on the non-polished side. The abrasive slurry contains more than 6 volume percent abrasive particles, and the abrasive slurry has a viscosity greater than about 2 cP. The preferred pad comprises an organic polymer having a hardness greater than about 45 on the Shore D scale, optimally a polyurethane. The pressure of the pad against the wafer surface preferably does not exceed about 3 psi. Preferably, the chemical etching solution contains potassium hydroxide. An acidic solution can then be applied to the wafer surface. The reclaimed silicon wafer has a matted side having etch pits which does not exceed 20 microns in width, an average roughness not exceeding 0.5 microns and a peak-to-valley roughness not exceeding 5 microns. Any laser markings from the original wafer are present on the matted side of the wafer.

    摘要翻译： 一种方法，其包括通过使用旋转垫和研磨​​剂浆料在表面中诱导微裂纹从晶片去除表面层材料，直到除去所有表面层材料; 并化学蚀刻晶片的表面，直到从中除去所有的微裂缝。 边缘材料由砂带除去。 回收期间的晶片厚度减少每周期小于30微米。 抛光晶片衬底的前表面和后表面之一，任何点或凹槽在非抛光侧。 研磨浆料含有超过6体积％的磨料颗粒，磨料浆料的粘度大于约2cP。 优选的垫包括硬度大于约45的肖氏D级的有机聚合物，最好是聚氨酯。 衬垫对晶片表面的压力优选不超过约3psi。 优选地，化学蚀刻溶液含有氢氧化钾。 然后可以将酸性溶液施加到晶片表面。 回收的硅晶片具有不平坦粗糙度不超过0.5微米且峰谷粗糙度不超过5微米的蚀刻凹坑的无光泽面。 来自原始晶片的任何激光标记都存在于晶片的无光面上。