公开(公告)号：EP0774776A3

公开(公告)日：1998-03-25

申请号：EP96115840.9

申请日：1996-10-02

申请人： KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. ,  Kobe Precision Inc.

发明人： Takada, Satoru ,  Inoue, Hidetoshi ,  Hara, Yoshihiro

IPC分类号： H01L21/30

CPC分类号： H01L21/02032 ,  B24B9/065 ,  B24B21/00 ,  B24B37/04 ,  H01L21/02079 ,  H01L21/30

摘要： A process comprising removing surface layer materials from the wafer by inducing micro-fractures in the surface using a rotating pad and an abrasive slurry until all of the surface layer materials are removed; and chemically etching the surfaces of the wafer until all micro-fractures are removed therefrom. Edge materials are removed by abrasive tape. Wafer thickness reduction during recycling is less than 30 microns per cycle. One of the front and back surfaces of the wafer substrate is polished, any dots or grooves being on the non-polished side. The abrasive slurry contains more than 6 volume percent abrasive particles, and the abrasive slurry has a viscosity greater than about 2 cP. The preferred pad comprises an organic polymer having a hardness greater than about 45 on the Shore D scale, optimally a polyurethane. The pressure of the pad against the wafer surface preferably does not exceed about 3 psi. Preferably, the chemical etching solution contains potassium hydroxide. An acidic solution can then be applied to the wafer surface. The reclaimed silicon wafer has a matted side having etch pits which does not exceed 20 microns in width, an average roughness not exceeding 0.5 microns and a peak-to-valley roughness not exceeding 5 microns. Any laser markings from the original wafer are present on the matted side of the wafer.

公开(公告)号：EP2213415A1

公开(公告)日：2010-08-04

申请号：EP09290064.6

申请日：2009-01-29

申请人： S.O.I. TEC Silicon

发明人： Kerdiles, Sèbastien ,  Schwarzenbach, Walter ,  Alami-Idrissi, Aziz

IPC分类号： B24B9/06 ,  B24B37/04 ,  H01L21/304

CPC分类号： B24B9/065 ,  B24B37/042 ,  B24B37/28 ,  H01L21/02032 ,  H01L21/02079 ,  H01L21/76254

摘要： The invention relates to a device for chemical and mechanical polishing of the edge of a semiconductor substrate comprising a protruding residual topography in a peripheral region of the substrate resulting from a layer transfer process based on an ion implantation step, a bonding step and a detachment step, such as Smart-Cut ™ . To be able to remove this step-like region, the device comprises a polishing pad, wherein the polishing pad is arranged and configured such that its cross section in a plane perpendicular to the surface of a substrate holder is curved. The invention furthermore relates to a pad holder used in the device and a method for polishing a semiconductor substrate comprising a protruding residual topography.

摘要翻译： 本发明涉及一种用于半导体衬底边缘的化学和机械抛光的装置，其包括基于离子注入步骤的层转移工艺产生的衬底的外围区域中的突出残留形貌，接合步骤和分离步骤 ，如Smart-Cut“¢”。 为了能够去除该阶梯状区域，该装置包括抛光垫，其中抛光垫被布置和构造成使得其垂直于衬底保持器表面的平面中的横截面是弯曲的。 本发明还涉及在该装置中使用的焊盘保持架以及用于抛光包括突出的残留形貌的半导体衬底的方法。

公开(公告)号：EP1946358A2

公开(公告)日：2008-07-23

申请号：EP06850723.5

申请日：2006-11-09

申请人： ADVANCED TECHNOLOGY MATERIALS, INC.

发明人： VISINTIN, Pamela M. ,  JIANG, Ping ,  KORZENSKI, Michael B. ,  KING, Mackenzie

IPC分类号： H01L21/302

CPC分类号： C09K13/08 ,  H01L21/02032 ,  H01L21/02079 ,  H01L21/31111 ,  H01L21/32134

摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

公开(公告)号：EP3051574A1

公开(公告)日：2016-08-03

申请号：EP14849128.5

申请日：2014-09-24

申请人： Shibaura Mechatronics Corporation

发明人： KANAI, Takahiro ,  MATSUI, Emi ,  HAYASHI, Konosuke

IPC分类号： H01L21/02 ,  H01L21/304

CPC分类号： H01L21/02079 ,  H01L21/31133 ,  H01L21/67086 ,  H01L21/67092 ,  H01L21/68728

摘要： The embodiment of a substrate treatment device includes a treatment bath configured to store a treatment liquid in which a treatment object is to be immersed, a transport section configured to transport the treatment object, a temperature control section provided in at least one of the treatment bath and a position spaced from the treatment bath and configured to perform at least one of heating and cooling of the treatment object.
the treatment object is at least one of:
a laminated substrate including a device substrate, a support substrate, and an adhesive provided between the device substrate and the support substrate,
the device substrate with the adhesive attached thereto, and
the support substrate with the adhesive attached thereto.

公开(公告)号：EP1975987A3

公开(公告)日：2011-03-09

申请号：EP08103209.6

申请日：2008-03-31

申请人： ADVANCED TECHNOLOGY MATERIALS, INC.

发明人： Visintin, Pamela M. ,  Jiang, Ping ,  Korzenski, Michael B. ,  King, Mackenzie ,  Fletcher, Kristin A. ,  Minsek, David W.

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/02079 ,  C11D1/004 ,  C11D1/29 ,  C11D3/042 ,  C11D3/046 ,  C11D3/3454 ,  C11D3/3947 ,  C11D11/0041 ,  C23F1/16 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32134

摘要： Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure.

公开(公告)号：EP1946358A4

公开(公告)日：2009-03-04

申请号：EP06850723

申请日：2006-11-09

申请人： ADVANCED TECH MATERIALS

发明人： VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  KING MACKENZIE

IPC分类号： H01L21/3213 ,  C23F1/44

CPC分类号： C09K13/08 ,  H01L21/02032 ,  H01L21/02079 ,  H01L21/31111 ,  H01L21/32134

摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

公开(公告)号：EP0774776A2

公开(公告)日：1997-05-21

申请号：EP96115840.9

申请日：1996-10-02

申请人： KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. ,  Kobe Precision Inc.

发明人： Takada, Satoru ,  Inoue, Hidetoshi ,  Hara, Yoshihiro

IPC分类号： H01L21/30

CPC分类号： H01L21/02032 ,  B24B9/065 ,  B24B21/00 ,  B24B37/04 ,  H01L21/02079 ,  H01L21/30

摘要： A process comprising removing surface layer materials from the wafer by inducing micro-fractures in the surface using a rotating pad and an abrasive slurry until all of the surface layer materials are removed; and chemically etching the surfaces of the wafer until all micro-fractures are removed therefrom. Edge materials are removed by abrasive tape. Wafer thickness reduction during recycling is less than 30 microns per cycle. One of the front and back surfaces of the wafer substrate is polished, any dots or grooves being on the non-polished side. The abrasive slurry contains more than 6 volume percent abrasive particles, and the abrasive slurry has a viscosity greater than about 2 cP. The preferred pad comprises an organic polymer having a hardness greater than about 45 on the Shore D scale, optimally a polyurethane. The pressure of the pad against the wafer surface preferably does not exceed about 3 psi. Preferably, the chemical etching solution contains potassium hydroxide. An acidic solution can then be applied to the wafer surface. The reclaimed silicon wafer has a matted side having etch pits which does not exceed 20 microns in width, an average roughness not exceeding 0.5 microns and a peak-to-valley roughness not exceeding 5 microns. Any laser markings from the original wafer are present on the matted side of the wafer.

摘要翻译： 一种方法，其包括通过使用旋转垫和研磨​​剂浆料在表面中诱导微裂纹从晶片去除表面层材料，直到除去所有表面层材料; 并化学蚀刻晶片的表面，直到从中除去所有的微裂缝。 边缘材料由砂带除去。 回收期间的晶片厚度减少每周期小于30微米。 抛光晶片衬底的前表面和后表面之一，任何点或凹槽在非抛光侧。 研磨浆料含有超过6体积％的磨料颗粒，磨料浆料的粘度大于约2cP。 优选的垫包括硬度大于约45的肖氏D级的有机聚合物，最好是聚氨酯。 衬垫对晶片表面的压力优选不超过约3psi。 优选地，化学蚀刻溶液含有氢氧化钾。 然后可以将酸性溶液施加到晶片表面。 回收的硅晶片具有不平坦粗糙度不超过0.5微米且峰谷粗糙度不超过5微米的蚀刻凹坑的无光泽面。 来自原始晶片的任何激光标记都存在于晶片的无光面上。

公开(公告)号：EP2269215A1

公开(公告)日：2011-01-05

申请号：EP09719620.8

申请日：2009-01-29

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： MALEVILLE, Christophe

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02079 ,  Y10S438/977

摘要： The present invention relates to a method forfabricating a substrate (1) of semiconductor on insulatortype, comprising the following steps: - formation of an oxide layer (20) on a donor substrate (10) or a receiver substrate (30), - implantation of atomic species in the donor substrate so as to form a weakened zone(12), - bonding of the donor substrate onto the receiver substrate (30), the oxide layer (20) being at the bonding interface, - fracturing the donor substrate in the weakened zone (12) and transferring a layer of the donor substrate to the receiver substrate (30), - recycling of the remainder (2) of the donor substrate to form a receiver substrate (40) used for fabrication of a second semiconductor on insulator type 10 substrate. Before the oxidation step, a layer(14) of semiconducting materialis formed by epitaxy onthedonor substrate (10). In the implantation step, the weakened zone (12) formed in said epitaxied layer (14) so that the transferred layer is an epitaxied semiconducting material layer (140). And the donor substrate (10) is chosen comprising oxygen precipitates with a density of less than10
10 /cm
3 and/or a mean size of less than 500 nm.

公开(公告)号：EP1975987A2

公开(公告)日：2008-10-01

申请号：EP08103209.6

申请日：2008-03-31

申请人： ADVANCED TECHNOLOGY MATERIALS, INC.

发明人： Visintin, Pamela M. ,  Jiang, Ping ,  Korzenski, Michael B. ,  King, Mackenzie ,  Fletcher, Kristin A. ,  Minsek, David W.

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/02

CPC分类号： H01L21/02079 ,  C11D1/004 ,  C11D1/29 ,  C11D3/042 ,  C11D3/046 ,  C11D3/3454 ,  C11D3/3947 ,  C11D11/0041 ,  C23F1/16 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32134

摘要： Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure.

摘要翻译： 去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除至少一个材料层的方法。 除去组合物包括氢氟酸。 该组合物实质上除去待除去的材料，同时不损坏要保留的层，用于回收，再加工，再循环和/或再利用所述结构。

公开(公告)号：EP1826260A1

公开(公告)日：2007-08-29

申请号：EP06004014.4

申请日：2006-02-28

申请人： Lee, Gi-Won

发明人： Lee, Ki Jeong

IPC分类号： C11D7/26 ,  H01L21/306

CPC分类号： C11D3/3947 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D11/0047 ,  H01L21/02079

摘要： In a cleaning composition for removing residual impurities from a substrate or an apparatus for forming an integrated circuit, and a method of removing the impurities using the cleaning composition, the cleaning composition includes about 4 to about 50 percent by weight of at least two compounds selected from the group consisting of citric acid, a citrate salt, a fluoride salt, hydrofluoric acid, hydrogen peroxide and ammonium persulfate, and a remainder of water. The cleaning composition may effectively remove residual impurities from the substrate or the apparatus, and may prevent the substrate or the apparatus from being recontaminated by the impurities.

摘要翻译： 在一种用于从基片或设备用于集成电路的形成中除去残留的杂质的清洁组合物，以及使用该清洗组合物中除去杂质的方法，清洁组合物包含约4至约50％（重量）的至少两种化合物的选择 选自柠檬酸，柠檬酸盐，氟化物盐，氢氟酸，过氧化氢和过硫酸铵，以及余量的水。 清洁组合物可有效地从基板或装置除去残留的杂质，并且可以防止在基板或装置从由所述杂质再次被污染。