公开(公告)号：EP0216572A2

公开(公告)日：1987-04-01

申请号：EP86306984.5

申请日：1986-09-10

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Kuroda, Fumihiko c/o Patent Division ,  Sadamasa, Tetsuo c/o Patent Division ,  Suzuki, Nobuo c/o Patent Division ,  Nakamura, Masaru c/o Patent Division

IPC分类号： H01L31/10 ,  H01L21/265

CPC分类号： H01L21/26546 ,  H01L31/105 ,  H01L31/1075

摘要： A semiconductor photo-detector having a two-stepped impurity profile comprises a semiconductor substrate (10), a light absorption layer (14) of a first conductivity type formed on a semiconductor substrate, a multiplication layer (18) of a first conductivity type formed on the light d bsorption layer to multiply a photocurrent, a semiconductor region (22) of a second conductivity type formed on the multiplication layer and constituting an abrupt pn junction with the multiplication layer, and a guard ring area (38) of a second conductivity type formed around a periphery of the semiconductor region, whereby the carrier concentration profile of the guard ring region is sharp at its surface and flat below that surface.

公开(公告)号：EP0216572B1

公开(公告)日：1995-04-05

申请号：EP86306984.5

申请日：1986-09-10

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Kuroda, Fumihiko c/o Patent Division ,  Sadamasa, Tetsuo c/o Patent Division ,  Suzuki, Nobuo c/o Patent Division ,  Nakamura, Masaru c/o Patent Division

IPC分类号： H01L31/10 ,  H01L21/265

CPC分类号： H01L21/26546 ,  H01L31/105 ,  H01L31/1075

摘要： A semiconductor photo-detector having a two-stepped impurity profile comprises a semiconductor substrate, a light absorption layer of a first conductivity type formed on a semiconductor substrate, a multiplication layer of a first conductivity type formed on the light absorption layer to multiply a photocurrent, a semiconductor region of a second conductivity type formed on the multiplication layer and constituting an abrupt pn junction with the multiplication layer, and a guard ring area of a second conductivity type formed around a periphery of the semiconductor region, whereby the carrier concentration profile of the guard ring region is sharp at its surface and flat below that surface.

公开(公告)号：EP0216572A3

公开(公告)日：1989-07-19

申请号：EP86306984.5

申请日：1986-09-10

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Kuroda, Fumihiko c/o Patent Division ,  Sadamasa, Tetsuo c/o Patent Division ,  Suzuki, Nobuo c/o Patent Division ,  Nakamura, Masaru c/o Patent Division

IPC分类号： H01L31/10 ,  H01L21/265

CPC分类号： H01L21/26546 ,  H01L31/105 ,  H01L31/1075

摘要： A semiconductor photo-detector having a two-stepped impurity profile comprises a semiconductor substrate (10), a light absorption layer (14) of a first conductivity type formed on a semiconductor substrate, a multiplication layer (18) of a first conductivity type formed on the light d bsorption layer to multiply a photocurrent, a semiconductor region (22) of a second conductivity type formed on the multiplication layer and constituting an abrupt pn junction with the multiplication layer, and a guard ring area (38) of a second conductivity type formed around a periphery of the semiconductor region, whereby the carrier concentration profile of the guard ring region is sharp at its surface and flat below that surface.