-
公开(公告)号：EP0233725A2
公开(公告)日：1987-08-26
申请号：EP87300903.9
申请日：1987-02-02
发明人： Kinoshita, Jun'ichi c/o Patent Division , Suzuki, Nobuo c/o Patent Division , Morinaga, Motoyasu c/o Patent Division , Hirayama, Yuzo c/o Patent Division , Nakamura, Masaru c/o Patent Division
IPC分类号： H01L29/80 , H01L27/15 , H01L33/00 , H01S3/19 , H01L21/28 , H01L21/306 , H01L21/82 , H01L21/76
CPC分类号： H01S5/0422 , H01L21/30612 , H01L21/8252 , H01L27/15 , H01L29/812 , H01L33/0062 , H01S5/0208 , H01S5/0261 , H01S5/06203 , H01S5/20 , H01S5/32391 , Y10S148/053 , Y10S148/095 , Y10S148/119
摘要： In a monolithic OEIC in which an FET (Q1) and a light-emitting device (LD) are integrated, the light-emitting device (LD) has a first clad layer (14), an active layer (15,), and a second clad layer (17) stacked on a substrate (11), the FET (Q1) has a channel layer (12) and source and drain layers (14 2 , 14 3 ) with a high impurity concentration stacked on the substrate (11), etching mask layers (15 2 , 15 3 ) on the source and drain layers (14 2 , 14 3 ), and a gate electrode (22) formed on a channel layer (12) between source and drain electrodes (21 1 , 21 2 ) and the source and drain layers (14 2 , 14 3 ), the first clad layer (14 1 ) of the light-emitting diode (LD) and the source and drain layers (14 2 , 14 3 ) with a high impurity concentration of the FET (Q 1 ) are formed of the same semiconductor layer, and an active layer (15 1 ) of the light-emitting device (LD) and the etching mask layers (15 2 , 15 3 ) of the FET (Q1) are formed of the same semiconductor layer.
摘要翻译： 在集成了FET（Q1）和发光元件（LD）的单片式OEIC中，发光元件（LD）具有第一包覆层（14），活性层（15）和 （11）上堆叠的第二覆盖层（17），FET（Q1）具有沟道层（12）和堆叠在衬底（11）上的具有高杂质浓度的源极和漏极层（142,143） 在源极和漏极层（142,143）上的掩模层（152,153）以及在源极和漏极电极（211,212）与源极和漏极层之间的沟道层（12）上形成的栅极电极（22） （142,143），发光二极管（LD）的第一覆盖层（141）和FET（Q1）的高杂质浓度的源极和漏极层（142,143）由相同的半导体 层，并且发光器件（LD）的有源层（151）和FET（Q1）的蚀刻掩模层（152,153）由相同的半导体层形成。
-
公开(公告)号：EP0216572A2
公开(公告)日：1987-04-01
申请号：EP86306984.5
申请日：1986-09-10
发明人： Kuroda, Fumihiko c/o Patent Division , Sadamasa, Tetsuo c/o Patent Division , Suzuki, Nobuo c/o Patent Division , Nakamura, Masaru c/o Patent Division
IPC分类号： H01L31/10 , H01L21/265
CPC分类号： H01L21/26546 , H01L31/105 , H01L31/1075
摘要： A semiconductor photo-detector having a two-stepped impurity profile comprises a semiconductor substrate (10), a light absorption layer (14) of a first conductivity type formed on a semiconductor substrate, a multiplication layer (18) of a first conductivity type formed on the light d bsorption layer to multiply a photocurrent, a semiconductor region (22) of a second conductivity type formed on the multiplication layer and constituting an abrupt pn junction with the multiplication layer, and a guard ring area (38) of a second conductivity type formed around a periphery of the semiconductor region, whereby the carrier concentration profile of the guard ring region is sharp at its surface and flat below that surface.
-
公开(公告)号：EP0216572B1
公开(公告)日：1995-04-05
申请号：EP86306984.5
申请日：1986-09-10
发明人： Kuroda, Fumihiko c/o Patent Division , Sadamasa, Tetsuo c/o Patent Division , Suzuki, Nobuo c/o Patent Division , Nakamura, Masaru c/o Patent Division
IPC分类号： H01L31/10 , H01L21/265
CPC分类号： H01L21/26546 , H01L31/105 , H01L31/1075
摘要： A semiconductor photo-detector having a two-stepped impurity profile comprises a semiconductor substrate, a light absorption layer of a first conductivity type formed on a semiconductor substrate, a multiplication layer of a first conductivity type formed on the light absorption layer to multiply a photocurrent, a semiconductor region of a second conductivity type formed on the multiplication layer and constituting an abrupt pn junction with the multiplication layer, and a guard ring area of a second conductivity type formed around a periphery of the semiconductor region, whereby the carrier concentration profile of the guard ring region is sharp at its surface and flat below that surface.
-
4.发明公开Semiconductor photo-detector having a two-stepped impurity profile 失效具有两步输入特性的SEMICONDUCTOR PHOTO-DETECTOR
公开(公告)号：EP0216572A3
公开(公告)日：1989-07-19
申请号：EP86306984.5
申请日：1986-09-10
发明人： Kuroda, Fumihiko c/o Patent Division , Sadamasa, Tetsuo c/o Patent Division , Suzuki, Nobuo c/o Patent Division , Nakamura, Masaru c/o Patent Division
IPC分类号： H01L31/10 , H01L21/265
CPC分类号： H01L21/26546 , H01L31/105 , H01L31/1075
摘要： A semiconductor photo-detector having a two-stepped impurity profile comprises a semiconductor substrate (10), a light absorption layer (14) of a first conductivity type formed on a semiconductor substrate, a multiplication layer (18) of a first conductivity type formed on the light d bsorption layer to multiply a photocurrent, a semiconductor region (22) of a second conductivity type formed on the multiplication layer and constituting an abrupt pn junction with the multiplication layer, and a guard ring area (38) of a second conductivity type formed around a periphery of the semiconductor region, whereby the carrier concentration profile of the guard ring region is sharp at its surface and flat below that surface.
-
公开(公告)号：EP0233725B1
公开(公告)日：1995-04-19
申请号：EP87300903.9
申请日：1987-02-02
发明人： Kinoshita, Jun'ichi c/o Patent Division , Suzuki, Nobuo c/o Patent Division , Morinaga, Motoyasu c/o Patent Division , Hirayama, Yuzo c/o Patent Division , Nakamura, Masaru c/o Patent Division
IPC分类号： H01L29/80 , H01L27/15 , H01L33/00 , H01S3/19 , H01L21/28 , H01L21/306 , H01L21/82 , H01L21/76
CPC分类号： H01S5/0422 , H01L21/30612 , H01L21/8252 , H01L27/15 , H01L29/812 , H01L33/0062 , H01S5/0208 , H01S5/0261 , H01S5/06203 , H01S5/20 , H01S5/32391 , Y10S148/053 , Y10S148/095 , Y10S148/119
-
公开(公告)号：EP0293185B1
公开(公告)日：1994-02-02
申请号：EP88304737.5
申请日：1988-05-25
发明人： Morinaga, Motoyasu c/o Patent Division , Furuyama, Hideto c/o Patent Division , Nakamura, Masaru c/o Patent Division , Suzuki, Nobuo c/o Patent Division , Hirayama, Yuzo c/o Patent Division , Okuda, Hajime c/o Patent Division
CPC分类号： H01S5/026 , H01S5/0208 , H01S5/0422 , H01S5/0425 , H01S5/227 , H01S5/2275 , H01S5/2277 , H01S5/32391
-
公开(公告)号：EP0293185A3
公开(公告)日：1989-04-12
申请号：EP88304737.5
申请日：1988-05-25
发明人： Morinaga, Motoyasu c/o Patent Division , Furuyama, Hideto c/o Patent Division , Nakamura, Masaru c/o Patent Division , Suzuki, Nobuo c/o Patent Division , Hirayama, Yuzo c/o Patent Division , Okuda, Hajime c/o Patent Division
CPC分类号： H01S5/026 , H01S5/0208 , H01S5/0422 , H01S5/0425 , H01S5/227 , H01S5/2275 , H01S5/2277 , H01S5/32391
摘要： A semiconductor laser device comprises a substrate (10) having an n-type buffer layer (11), a semiconductor laser element and auxiliary element, provided side by side on the buffer layer. The semiconductor laser element includes a mesa portion having a p-type low resistant semiconductor region (13c) provided above the buffer layer, an active region (12a) consisting of a semiconductor formed on the buffer layer and low resistant region, a pair of buried portions (13a) integrally formed with the low resistive sregion and formed on and contiguous to opposite sides of the active region in the width direction. A lateral hole (35) is provided between the buffer layer and low sresistive region on the side of buried portion. The auxiliary element includes a high resistive regions (13d) integrally formed with the low resistant region and positioned on the sides of low resistive region.
-
8.发明公开Semiconductor laser device and method for manufacturing the same 失效Halbleiterlaservorrichtung und Verfahren zu ihrer Herstellung。
公开(公告)号：EP0293185A2
公开(公告)日：1988-11-30
申请号：EP88304737.5
申请日：1988-05-25
发明人： Morinaga, Motoyasu c/o Patent Division , Furuyama, Hideto c/o Patent Division , Nakamura, Masaru c/o Patent Division , Suzuki, Nobuo c/o Patent Division , Hirayama, Yuzo c/o Patent Division , Okuda, Hajime c/o Patent Division
CPC分类号： H01S5/026 , H01S5/0208 , H01S5/0422 , H01S5/0425 , H01S5/227 , H01S5/2275 , H01S5/2277 , H01S5/32391
摘要： A semiconductor laser device comprises a substrate (10) having an n-type buffer layer (11), a semiconductor laser element and auxiliary element, provided side by side on the buffer layer. The semiconductor laser element includes a mesa portion having a p-type low resistant semiconductor region (13c) provided above the buffer layer, an active region (12a) consisting of a semiconductor formed on the buffer layer and low resistant region, a pair of buried portions (13a) integrally formed with the low resistive sregion and formed on and contiguous to opposite sides of the active region in the width direction. A lateral hole (35) is provided between the buffer layer and low sresistive region on the side of buried portion. The auxiliary element includes a high resistive regions (13d) integrally formed with the low resistant region and positioned on the sides of low resistive region.
摘要翻译： 半导体激光装置包括在缓冲层上并排设置的具有n型缓冲层（11），半导体激光元件和辅助元件的衬底（10）。 半导体激光元件包括具有设置在缓冲层上方的p型低电阻半导体区域（13c）的台面部分，由缓冲层上形成的半导体和低电阻区域构成的有源区域（12a），一对埋入 与低电阻区域整体形成并形成在有源区域的宽度方向的相对侧上且与其邻接的部分（13a）。 横向孔（35）设置在缓冲层和掩埋部分侧的低阻力区域之间。 辅助元件包括与低电阻区域整体形成并位于低电阻区域侧面的高电阻区域（13d）。
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.011 秒)
