Semiconductor device with reduced internal inductance
    1.
    发明公开
    Semiconductor device with reduced internal inductance 失效
    Halbleiterverbundelement mit reduzierter interner Induktanz。

    公开(公告)号:EP0588094A1

    公开(公告)日:1994-03-23

    申请号:EP93113283.1

    申请日:1993-08-19

    IPC分类号: H01L23/64 H01L25/07

    摘要: A semiconductor device for accomplishing high speed switchings with a large current includes a radiation plate (9), a first conductor (11) fixed on said radiation plate, a first insulating layer (13) fixed on said first conductor, a second conductor (15) fixed on said first insulating layer, at least one semiconductor element (29,31) and a second insulating layer (23) fixed on said second conductor, a third conductor (25) fixed on said second insulating layer, a fourth conductor (33) for electrically connecting the surface electrode of said semiconductor element with said third conductor, a first power terminal (7) fixed on said second conductor, and a second power terminal (5) fixed on said third conductor. To reduce the internal inductance, said first and second power terminals have a flat part whose width is larger in length than the height. Also, these terminals are adjacently arranged substantially parallel to each other. In this device, the main currents on said first and second power terminals, and on said second and fourth conductors flow in the opposite directions, thus further reducing the internal inductance.

    摘要翻译: 用于实现具有大电流的高速切换的半导体器件包括辐射板(9),固定在所述辐射板上的第一导体(11),固定在所述第一导体上的第一绝缘层(13),第二导体(15) )固定在所述第一绝缘层上,固定在所述第二导体上的至少一个半导体元件(29,31)和第二绝缘层(23),固定在所述第二绝缘层上的第三导体(25),第四导体 ),用于将所述半导体元件的表面电极与所述第三导体电连接,固定在所述第二导体上的第一电源端子(7)和固定在所述第三导体上的第二电源端子(5)。 为了减小内部电感,所述第一和第二电源端子具有宽度比高度长的宽度的平坦部分。 此外,这些端子彼此相邻地相邻布置。 在该装置中,所述第一和第二电源端子以及所述第二和第四导体上的主电流沿相反方向流动,从而进一步减小内部电感。

    Insulated gate bipolar transistor
    4.
    发明公开
    Insulated gate bipolar transistor 失效
    双极晶体管隔离门。

    公开(公告)号:EP0634796A1

    公开(公告)日:1995-01-18

    申请号:EP94110811.0

    申请日:1994-07-12

    发明人: Matsuda, Tadashi

    IPC分类号: H01L29/72 H01L29/08

    CPC分类号: H01L29/7395 H01L29/0834

    摘要: An Insulated Gate Bipolar Transistor (IGBT) having a new structure capable of performing a low on-voltage and a high-speed turn-off is provided. A P-type collector region (1) of IGBT is not formed on the entire reverse surface of an N-type base region (2), but formed only on its part, and a metal collector electrode (9) is electrically connected only with the surface to which the P-type collector region (1) exposes. An area of a diffusion window in a collector region is relatively reduced, whereby the impurity concentration of the entire collector region is set at a lower value and hole injection efficiency is decreased. At the same time it is possible to obtain high surface concentration with deep diffusion depth of the collector region required to form a favorable ohmic contact.

    摘要翻译: 提供具有能够执行低导通电压和高速关断的新结构的绝缘栅双极型晶体管(IGBT)。 IGBT的P型集电极区域(1)不形成在N型基极区域(2)的整个反面上,仅形成在其一部分上,金属集电极(9)仅与 P型收集区域(1)所暴露的表面。 集电区域的扩散窗口的面积相对减少,集电体区域的杂质浓度被设定为较低的值,空穴注入效率降低。 同时,可以获得具有形成良好的欧姆接触所需的集电极区域的深扩散深度的高表面浓度。