摘要:
A semiconductor device for accomplishing high speed switchings with a large current includes a radiation plate (9), a first conductor (11) fixed on said radiation plate, a first insulating layer (13) fixed on said first conductor, a second conductor (15) fixed on said first insulating layer, at least one semiconductor element (29,31) and a second insulating layer (23) fixed on said second conductor, a third conductor (25) fixed on said second insulating layer, a fourth conductor (33) for electrically connecting the surface electrode of said semiconductor element with said third conductor, a first power terminal (7) fixed on said second conductor, and a second power terminal (5) fixed on said third conductor. To reduce the internal inductance, said first and second power terminals have a flat part whose width is larger in length than the height. Also, these terminals are adjacently arranged substantially parallel to each other. In this device, the main currents on said first and second power terminals, and on said second and fourth conductors flow in the opposite directions, thus further reducing the internal inductance.
摘要:
An Insulated Gate Bipolar Transistor (IGBT) having a new structure capable of performing a low on-voltage and a high-speed turn-off is provided. A P-type collector region (1) of IGBT is not formed on the entire reverse surface of an N-type base region (2), but formed only on its part, and a metal collector electrode (9) is electrically connected only with the surface to which the P-type collector region (1) exposes. An area of a diffusion window in a collector region is relatively reduced, whereby the impurity concentration of the entire collector region is set at a lower value and hole injection efficiency is decreased. At the same time it is possible to obtain high surface concentration with deep diffusion depth of the collector region required to form a favorable ohmic contact.