公开(公告)号：EP0390552B1

公开(公告)日：1995-12-20

申请号：EP90303352.0

申请日：1990-03-29

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ashizawa, Yasuo, c/o Intellectual Property Div. ,  Noda, Takao, c/o Intellectual Property Div. ,  Kushibe, Mitsuhiro, c/o Intellectual Property Div. ,  Funemizu, Masahisa, c/o Intellectual Property Div. ,  Eguchi, Kazuhiro, c/o Intellectual Property Div. ,  Ohba, Yasuo, c/o Intellectual Property Div. ,  Kokubun, Yoshihiro, c/o Intellectual Property Div.

IPC分类号： H01L21/205 ,  C30B25/02 ,  C30B29/42

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/057 ,  Y10S148/11

公开(公告)号：EP0390552A3

公开(公告)日：1991-04-17

申请号：EP90303352.0

申请日：1990-03-29

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ashizawa, Yasuo, c/o Intellectual Property Div. ,  Noda, Takao, c/o Intellectual Property Div. ,  Kushibe, Mitsuhiro, c/o Intellectual Property Div. ,  Funemizu, Masahisa, c/o Intellectual Property Div. ,  Eguchi, Kazuhiro, c/o Intellectual Property Div. ,  Ohba, Yasuo, c/o Intellectual Property Div. ,  Kokubun, Yoshihiro, c/o Intellectual Property Div.

IPC分类号： H01L21/205 ,  C30B25/02 ,  C30B29/42

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/057 ,  Y10S148/11

摘要： A p-type GaAs or AℓGaAs thin film is formed by a MOCVD method. In the growing step of the thin film, the thin film is doped with a high concentration of carbon atoms forming an acceptor level such that the carrier concentration of the thin film falls within the range of between 1 × 10¹⁸ cm⁻³ and 1 × 10²⁰ cm⁻³. At least one of trimethyl gallium and trimethyl aluminium is used as a raw material gaseous compound of III-group element, and arsine is used as a raw material gaseous compound of V-group element. The thin film is formed by an epitaxial growth under the molar ratio V/III of the V-group element supply rate to the III-group element supply rate, which is set at such a small value as 0.3 to 2.5, the temperature of 450 to 700°C and the pressure of 1 to 400 Torr. The thin film formed under these conditions exhibits a mirror-like smooth surface, and the film-growth rate is dependent on the supply rate of the V-group element.

公开(公告)号：EP0390552A2

公开(公告)日：1990-10-03

申请号：EP90303352.0

申请日：1990-03-29

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ashizawa, Yasuo, c/o Intellectual Property Div. ,  Noda, Takao, c/o Intellectual Property Div. ,  Kushibe, Mitsuhiro, c/o Intellectual Property Div. ,  Funemizu, Masahisa, c/o Intellectual Property Div. ,  Eguchi, Kazuhiro, c/o Intellectual Property Div. ,  Ohba, Yasuo, c/o Intellectual Property Div. ,  Kokubun, Yoshihiro, c/o Intellectual Property Div.

IPC分类号： H01L21/205 ,  C30B25/02 ,  C30B29/42

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/057 ,  Y10S148/11

摘要： A p-type GaAs or AℓGaAs thin film is formed by a MOCVD method. In the growing step of the thin film, the thin film is doped with a high concentration of carbon atoms forming an acceptor level such that the carrier concentration of the thin film falls within the range of between 1 × 10¹⁸ cm⁻³ and 1 × 10²⁰ cm⁻³. At least one of trimethyl gallium and trimethyl aluminium is used as a raw material gaseous compound of III-group element, and arsine is used as a raw material gaseous compound of V-group element. The thin film is formed by an epitaxial growth under the molar ratio V/III of the V-group element supply rate to the III-group element supply rate, which is set at such a small value as 0.3 to 2.5, the temperature of 450 to 700°C and the pressure of 1 to 400 Torr. The thin film formed under these conditions exhibits a mirror-like smooth surface, and the film-growth rate is dependent on the supply rate of the V-group element.

摘要翻译： 通过MOCVD法形成p型GaAs或A l GaAs薄膜。 在薄膜的生长步骤中，薄膜掺杂高浓度的碳原子，形成受体水平，使得薄膜的载流子浓度在1×10 8 cm之间 3和1×10 2 cm -3。 使用三甲基镓和三甲基铝中的至少一种作为III族元素的原料气态化合物，并且使用胂作为V族元素的原料气体化合物。 该薄膜通过V族元素供给速率与III族元素供给速率的摩尔比V / III的外延生长形成，其设定为0.3〜2.5的小值，温度为450℃ 至700℃，压力为1至400托。 在这些条件下形成的薄膜表现出镜面状的光滑表面，膜生长速度取决于V族元素的供给速率。