公开(公告)号：EP0307995A2

公开(公告)日：1989-03-22

申请号：EP88201878.1

申请日：1988-09-02

申请人： Stichting Katholieke Universiteit

发明人： Van Suchtelen, Jaap ,  Giling, Lodevicus, Johannes ,  Hogenkamp, Josephus, Emanual, Maria

IPC分类号： C30B25/14 ,  C30B23/02

CPC分类号： C23C16/45523 ,  B01J4/02 ,  B01L3/0289 ,  C23C16/45561 ,  C30B25/14 ,  Y10S148/006 ,  Y10S148/057 ,  Y10S148/11 ,  Y10S148/169 ,  Y10S438/935

摘要： In order, in the epitaxial production of semiconductor products and of articles provided with a layer, to be able to make the junction between the layers applied to the substrates atomically sharp, it is important to be able to change the gas mixture, to be introduced into a pulsed reactor or MBE reactor, rapidly, accurately and without losses in respect of quantity and of composition. To this purpose, each of the gases to be introduced into the reactor (13) is conveyed to a separate gas pipette (9) and thereafter the content of the gas pipette is cyclically passed, by means of a pressure differential, into the pulse reactor, with the composition of the mixture being changed per one or more cycles.

摘要翻译： 为了在半导体产品和具有层的制品的外延生产中，为了能够使应用于基板的层之间的接合原子地尖锐，重要的是能够改变气体混合物以被引入 在数量和组成方面快速准确地进入脉冲反应器或MBE反应器，并且不损失。 为此，将要引入反应器（13）的每种气体被输送到单独的气体吸管（9），之后气体移液管的内容物通过压力差循环地进入脉冲反应器 ，其中混合物的组成每一个或多个循环改变。

公开(公告)号：EP0390552A3

公开(公告)日：1991-04-17

申请号：EP90303352.0

申请日：1990-03-29

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ashizawa, Yasuo, c/o Intellectual Property Div. ,  Noda, Takao, c/o Intellectual Property Div. ,  Kushibe, Mitsuhiro, c/o Intellectual Property Div. ,  Funemizu, Masahisa, c/o Intellectual Property Div. ,  Eguchi, Kazuhiro, c/o Intellectual Property Div. ,  Ohba, Yasuo, c/o Intellectual Property Div. ,  Kokubun, Yoshihiro, c/o Intellectual Property Div.

IPC分类号： H01L21/205 ,  C30B25/02 ,  C30B29/42

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/057 ,  Y10S148/11

摘要： A p-type GaAs or AℓGaAs thin film is formed by a MOCVD method. In the growing step of the thin film, the thin film is doped with a high concentration of carbon atoms forming an acceptor level such that the carrier concentration of the thin film falls within the range of between 1 × 10¹⁸ cm⁻³ and 1 × 10²⁰ cm⁻³. At least one of trimethyl gallium and trimethyl aluminium is used as a raw material gaseous compound of III-group element, and arsine is used as a raw material gaseous compound of V-group element. The thin film is formed by an epitaxial growth under the molar ratio V/III of the V-group element supply rate to the III-group element supply rate, which is set at such a small value as 0.3 to 2.5, the temperature of 450 to 700°C and the pressure of 1 to 400 Torr. The thin film formed under these conditions exhibits a mirror-like smooth surface, and the film-growth rate is dependent on the supply rate of the V-group element.

公开(公告)号：EP0238830A1

公开(公告)日：1987-09-30

申请号：EP87102014.5

申请日：1987-02-13

申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

发明人： Mori, Hidefumi 4-16-8, Minamiogikubo ,  Tsuzuki, Nobuyori 4-10, Hamadacho ,  Yamamoto, Mitsuo 1282, Josuihoncho

IPC分类号： C30B25/14 ,  C30B25/18 ,  C30B29/40

CPC分类号： C30B25/14 ,  C30B25/18 ,  Y10S148/057 ,  Y10S148/065 ,  Y10S438/933

摘要： In an epitaxial growth method, a first gas (21) consisting of a hydrogen diluted gas containing a Group V element is continuously flowed on a monocrystalline substrate (16) that is placed in a reaction chamber, the monocrystalline substrate (16) is arranged in a gas mixing region where the first gas and a second gas containing a halogenide of a Group III element are mixed adjacent to the monocrystalline substrate, and a Group III-V compound semiconductor (25) is grown on the monocrystalline substrate.

公开(公告)号：EP0390552B1

公开(公告)日：1995-12-20

申请号：EP90303352.0

申请日：1990-03-29

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ashizawa, Yasuo, c/o Intellectual Property Div. ,  Noda, Takao, c/o Intellectual Property Div. ,  Kushibe, Mitsuhiro, c/o Intellectual Property Div. ,  Funemizu, Masahisa, c/o Intellectual Property Div. ,  Eguchi, Kazuhiro, c/o Intellectual Property Div. ,  Ohba, Yasuo, c/o Intellectual Property Div. ,  Kokubun, Yoshihiro, c/o Intellectual Property Div.

IPC分类号： H01L21/205 ,  C30B25/02 ,  C30B29/42

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/057 ,  Y10S148/11

公开(公告)号：EP0386676A3

公开(公告)日：1990-10-24

申请号：EP90104205.1

申请日：1990-03-05

申请人： FUJITSU LIMITED

发明人： Fujioka, Hiroshi

IPC分类号： H01L21/205

CPC分类号： B82Y10/00 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/165 ,  H01L29/66287 ,  H01L29/66439 ,  H01L29/775 ,  Y10S148/025 ,  Y10S148/057 ,  Y10S148/059 ,  Y10S148/16

摘要： A semiconductor growth process wherein a plurality of layers each consisting of a different kind of semiconductor material are grown comprises the steps of: heating a substrate to a first growth starting temperature at which a growth of a first semiconductor layer can be started, supplying a first material gas to the surface of said substrate to cause a growth of said first semiconductor layer, lowering the temperature of said substrate to below said first growth starting temperature, and at the same time, stopping the supply of said first material gas, to stop the growth of said first semiconductor layer, heating said substrate to a second growth starting temperature at which a growth of a second semiconductor layer can be started, and supplying a second material gas to the surface of said substrate to cause a growth of said semiconductor layer.

公开(公告)号：EP0247680A1

公开(公告)日：1987-12-02

申请号：EP87200929.5

申请日：1987-05-19

申请人： LABORATOIRES D'ELECTRONIQUE PHILIPS ,  Philips Electronics N.V.

发明人： Frijlink, Peter Michael Société Civile S.P.I.D.

IPC分类号： C30B25/14 ,  C30B25/16

CPC分类号： C23C16/45514 ,  C23C16/455 ,  C23C16/45576 ,  C30B25/14 ,  C30B31/165 ,  Y10S148/057 ,  Y10S148/11 ,  Y10T137/87676

摘要： Procédé de réalisation d'un dispositif semiconduc­teur, incluant le dépôt en phase vapeur de couches sur un substrat, dans la chambre d'un réacteur, caractérisé en ce qu'un gaz vecteur et un gaz réactant sont introduits dans la chambre du réacteur au moyen d'un système de trois tubes coaxiaux, un tube interne, un tube intermédiaire, et un tube externe, tubes dont les premières extrémités sont indépen­dantes, mais dont les secondes extrémités situées à proximité les unes des autres forment la vanne qui contrôle l'introduc­tion dans la zone chaude du réacteur du gaz réactant mêlé à un gaz vecteur. A cet effet la seconde extrémité du tube interne débouche dans le tube intermédiaire, la seconde extrémité du tube intermédiaire munie d'une restriction, débouche dans le tube externe, la seconde extrémité du tube externe, munie d'une restriction, débouche dans la chambre du réacteur à pro­ximité de la zone chaude et la première extrémité du tube in­termédiaire est munie d'une vanne V.
Application : Réalisation de dispositifs semiconducteurs du groupe III-V

公开(公告)号：EP0386676A2

公开(公告)日：1990-09-12

申请号：EP90104205.1

申请日：1990-03-05

申请人： FUJITSU LIMITED

发明人： Fujioka, Hiroshi

IPC分类号： H01L21/205

CPC分类号： B82Y10/00 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/165 ,  H01L29/66287 ,  H01L29/66439 ,  H01L29/775 ,  Y10S148/025 ,  Y10S148/057 ,  Y10S148/059 ,  Y10S148/16

摘要： A semiconductor growth process wherein a plurality of layers each consisting of a different kind of semiconductor material are grown comprises the steps of: heating a substrate to a first growth starting temperature at which a growth of a first semiconductor layer can be started, supplying a first material gas to the surface of said substrate to cause a growth of said first semiconductor layer, lowering the temperature of said substrate to below said first growth starting temperature, and at the same time, stopping the supply of said first material gas, to stop the growth of said first semiconductor layer, heating said substrate to a second growth starting temperature at which a growth of a second semiconductor layer can be started, and supplying a second material gas to the surface of said substrate to cause a growth of said semiconductor layer.

摘要翻译： 生长由不同种类的半导体材料组成的多个层的半导体生长工艺包括以下步骤：将衬底加热至可开始第一半导体层的生长的第一生长起始温度，将第一 将材料气体引导到所述衬底的表面以引起所述第一半导体层的生长，将所述衬底的温度降低到低于所述第一生长开始温度，并且同时停止所述第一材料气体的供应，以停止 所述第一半导体层的生长，将所述衬底加热到​​可以开始第二半导体层的生长的第二生长起始温度，并将第二材料气体供应到所述衬底的表面以引起所述半导体层的生长。

公开(公告)号：EP0247680B1

公开(公告)日：1990-07-25

申请号：EP87200929.5

申请日：1987-05-19

申请人： LABORATOIRES D'ELECTRONIQUE PHILIPS ,  Philips Electronics N.V.

发明人： Frijlink, Peter Michael Société Civile S.P.I.D.

IPC分类号： C30B25/14 ,  C30B25/16

CPC分类号： C23C16/45514 ,  C23C16/455 ,  C23C16/45576 ,  C30B25/14 ,  C30B31/165 ,  Y10S148/057 ,  Y10S148/11 ,  Y10T137/87676

公开(公告)号：EP0371854A2

公开(公告)日：1990-06-06

申请号：EP89403223.4

申请日：1989-11-22

申请人： MCNC

发明人： Reisman, Arnold ,  Jones, Gary Wayne

IPC分类号： C23C16/04 ,  C23C16/14 ,  C23F4/00 ,  H01L21/285

CPC分类号： H01L21/28562 ,  C23C16/04 ,  C23C16/14 ,  H01L21/30655 ,  H01L21/76879 ,  Y10S148/057 ,  Y10S148/058

摘要： A method for selectively depositing refractory metal (for example tungsten) on the surface (15) of a semiconductor substrate to form an electrical contact, without depositing refractory metal on an adjacent mask layer (11). Refractory metal halide gas and hydrogen gas are simultaneously flowed through a reaction chamber to deposit the refractory metal on the substrate surface and to a lesser extent on the mask layer. Then the flow of hydrogen is interrupted to cause the refractory metal halide to etch the refractory metal which forms on the mask layer. The deposition and etch steps are repeated until the requisite thickness is deposited. The process may take place in a single reaction chamber, using only refractory metal halide gas and pulsed flow of hydrogen gas. A low resistivity refractory metal layer is produced, and damage to the semiconductor surface is minimized.

摘要翻译： 一种用于在半导体衬底的表面（15）上选择性地沉积难熔金属（例如钨）以形成电接触而不在相邻掩模层（11）上沉积难熔金属的方法。 耐火金属卤化物气体和氢气同时流过反应室，以将难熔金属沉积在衬底表面上，并在较小程度上沉积在掩模层上。 然后中断氢气流，使难熔金属卤化物蚀刻在掩模层上形成的难熔金属。 重复沉积和蚀刻步骤直到沉积所需的厚度。 该过程可以在单个反应室中进行，仅使用难熔金属卤化物气体和脉冲的氢气流。 产生低电阻率难熔金属层，并使半导体表面的损伤最小化。

公开(公告)号：EP0232619A2

公开(公告)日：1987-08-19

申请号：EP86310103.6

申请日：1986-12-23

申请人： CANON KABUSHIKI KAISHA

发明人： Ishihara, Shunichi ,  Ootoshi, Hirokazu ,  Hirooka, Masaaki ,  Hanna,Junichi ,  Shimizu, Isamu

IPC分类号： H01L21/205 ,  H01L29/72 ,  C23C16/24

CPC分类号： H01L21/02381 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  Y10S148/057 ,  Y10S148/169 ,  Y10S438/909

摘要： There is provided an improved thin-film transistor of which a principal semiconducting layer comprises a layer composed of an amorphous material prepared by (a) introducing (i) a gaseous substance containing atoms capable of becoming constituents for said layer into a film forming chamber having a substrate for thin-film transistor through a transporting conduit for the gaseous substance and (ii) a gaseous halogen series substance having a property to oxidize the gaseous substance into the film forming chamber through a transporting conduit for the gaseous halogen series oxidizing agent, (b) chemically reacting the gaseous substance and the gaseous halogen series agent in the film forming chamber in the absence of a plasma to generate plural kinds of precursors containing exited precursors and (c) forming said layer on the substrate with utilizing at least one kind of those precursors as a supplier.