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    Method of forming resist pattern and resist processing apparatus used in this method
    1.
    发明公开
    Method of forming resist pattern and resist processing apparatus used in this method 失效
    形成本方法使用的电阻图案和电阻加工装置的方法

    公开(公告)号：EP0185366A3

    公开(公告)日：1988-10-19

    申请号：EP85116113

    申请日：1985-12-17

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Matsuoka, Yasuo ,  Tsuchiya, Takashi

    IPC分类号： G03F07/26

    CPC分类号： G03F7/40 ,  G03F7/38

    摘要： A method for forming a resist pattern comprises the steps of coating a resist on a substrate (12), baking the resist, selectively radiating electromagnetic waves or particle rays onto a surface of the resist, and developing the resist. The method further comprises, after the baking step and before the developing step, the step of cooling the resist in such a manner that a temperature control plate (8) is disposed parallel to and adjacent to the substrate (12).

    Method of forming resist pattern
    2.
    发明公开
    Method of forming resist pattern 失效
    一种用于生产过程的抗蚀剂图案。

    公开(公告)号：EP0185366A2

    公开(公告)日：1986-06-25

    申请号：EP85116113.3

    申请日：1985-12-17

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Matsuoka, Yasuo ,  Tsuchiya, Takashi

    IPC分类号： G03F7/26

    CPC分类号： G03F7/40 ,  G03F7/38

    摘要： A method for forming a resist pattern comprises the steps of coating a resist on a substrate (12), baking the resist, selectively radiating electromagnetic waves or particle rays onto a surface of the resist, and developing the resist. The method further comprises, after the baking step and before the developing step, the step of cooling the resist in such a manner that a temperature control plate (8) is disposed parallel to and adjacent to the substrate (12).

    Method for forming resist pattern
    3.
    发明公开
    Method for forming resist pattern 失效
    Verfahren zur Herstellung von Resistmuster。

    公开(公告)号：EP0114126A2

    公开(公告)日：1984-07-25

    申请号：EP84300297.3

    申请日：1984-01-18

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Kato, Yoshihide ,  Kirita, Kei ,  Shinozaki, Toshiaki ,  Shigemitsu, Fumiaki ,  Usuda, Kinya ,  Tsuchiya, Takashi

    IPC分类号： G03F7/16 ,  G03F7/26

    CPC分类号： G03F7/168 ,  Y10S430/168

    摘要： A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

    摘要翻译： 用于形成具有良好重复性的高精度抗蚀剂图案的方法具有以下步骤：将抗蚀剂材料施加到基底以形成抗蚀剂膜; 烘烤抗蚀膜; 以受控的方式冷却抗蚀膜; 选择性地照射预定波长范围的电磁波之一和具有预定能量的粒子束; 并显影抗蚀剂膜以形成抗蚀剂图案。