公开(公告)号：EP4060747A2

公开(公告)日：2022-09-21

申请号：EP22158411.3

申请日：2022-02-24

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： YASUHARA, Norio ,  IWAKAJI, Yoko ,  KAWAGUCHI, Yusuke ,  YOSHIKAWA, Daiki ,  MATSUSHITA, Kenichi ,  HANAGATA, Shoko ,  MATSUDAI, Tomoko ,  ITOKAZU, Hiroko ,  KAWAMURA, Keiko

IPC分类号： H01L29/739 ,  H01L29/40 ,  H01L29/06

摘要： This semiconductor device includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench in a first face side; a first gate electrode in the first trench; a first conductive layer in the first trench and between the first gate electrode and the second face, the first conductive layer being electrically separated from the first gate electrode; a second gate electrode in the second trench; a second conductive layer in the second trench and between the second gate electrode and the second face; a first electrode on a the first face side; a second electrode on a side of the second face; a first gate electrode pad being electrically connected to the first gate electrode; and a second gate electrode pad being electrically connected to the second gate electrode.

公开(公告)号：EP4060747A3

公开(公告)日：2022-11-16

申请号：EP22158411.3

申请日：2022-02-24

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： YASUHARA, Norio ,  IWAKAJI, Yoko ,  KAWAGUCHI, Yusuke ,  YOSHIKAWA, Daiki ,  MATSUSHITA, Kenichi ,  HANAGATA, Shoko ,  MATSUDAI, Tomoko ,  ITOKAZU, Hiroko ,  KAWAMURA, Keiko

IPC分类号： H01L29/739 ,  H01L29/40 ,  H01L29/06 ,  H01L29/423 ,  H01L29/10

摘要： This semiconductor device includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench in a first face side; a first gate electrode in the first trench; a first conductive layer in the first trench and between the first gate electrode and the second face, the first conductive layer being electrically separated from the first gate electrode; a second gate electrode in the second trench; a second conductive layer in the second trench and between the second gate electrode and the second face; a first electrode on a the first face side; a second electrode on a side of the second face; a first gate electrode pad being electrically connected to the first gate electrode; and a second gate electrode pad being electrically connected to the second gate electrode.