利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

2 条记录 (耗时 0.021 秒)

    MIXER CIRCUIT
    1.
    发明公开
    MIXER CIRCUIT 审中-公开
    MISCHERSCHALTUNG

    公开(公告)号：EP1633000A1

    公开(公告)日：2006-03-08

    申请号：EP04745809.6

    申请日：2004-06-11

    申请人： KABUSHIKI KAISHA TOYOTA JIDOSHOKKI ,  Niigata Seimitsu Co., Ltd. ,  OHMI, Tadahiro

    发明人： OHMI, Tadahiro ,  NISHIMUTA, Takefumi, c/o K.K. TOYOTA JIDOSHOKKI ,  MIYAGI, Hiroshi, c/o NIIGATA SEIMITSU CO., LTD ,  SUGAWA, Shigetoshi ,  TERAMOTO, Akinobu

    IPC分类号： H01L27/092 ,  H03D7/14 ,  H04B1/30 ,  H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/1033 ,  H01L21/823807 ,  H01L21/82385 ,  H01L29/045 ,  H03D7/1441 ,  H03D7/1458 ,  H03D2200/0033 ,  H03D2200/0047

    摘要： A mixer circuit is configured using a CMOS transistor (800), comprising a p-channel transistor (840A) and an n-channel transistor (840B) in which semiconductor substrates (810A, 810) with at least two crystal planes and a gate insulator (820A) formed on at least two of the crystal planes on the semiconductor substrate are comprised and the channel width of a channel formed in the semiconductor substrate along with the gate insulator is represented by summation of each of the channel widths of channels individually formed on said at least two crystal planes. Such a configuration allows reduction of 1/f noise, DC offset generated in output signals due to variation in electrical characteristics of a transistor element, and signal distortion based on the channel length modulation effect.

    摘要翻译： 使用CMOS晶体管（800）构成混频器电路，其包括p沟道晶体管（840A）和n沟道晶体管（840B），其中具有至少两个晶体面的半导体衬底（810A，810）和栅极绝缘体 包括形成在半导体衬底上的至少两个晶面上的（820A），并且形成在半导体衬底中的与栅极绝缘体一起形成的沟道的沟道宽度由各个沟道宽度的和 至少说两个晶面。 这样的结构允许减少由于晶体管元件的电特性的变化而在输出信号中产生的1 / f噪声，DC偏移，以及基于沟道长度调制效应的信号失真。

    SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT MANUFACTURING METHOD
    2.
    发明公开
    SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT MANUFACTURING METHOD 审中-公开
    HERBLEITERSCHALTUNG INTEGRIERTE HALBLEITERSCHALTUNG HERBLEITERSCHALTUNG

    公开(公告)号：EP1533894A1

    公开(公告)日：2005-05-25

    申请号：EP03736297.7

    申请日：2003-06-27

    申请人： Kabushiki Kaisha Toyota Jidoshokki ,  Niigata Seimitsu Co., Ltd.

    发明人： MIYAGI, Hiroshi, c/o NIIGATA SEIMITSU CO., LTD

    IPC分类号： H03F3/19

    CPC分类号： H03G1/007 ,  H03F1/223 ,  H03F3/193 ,  H03F2200/306

    摘要： An RF amplifier circuit 21 for amplifying AM broadcast signals is constituted by use of cascaded P channel MOSFETs 4 and 5. This cascade connection realizes a reduction of the feedback capacitance between the source and gate of the P channel MOSFET 4, thereby providing a stable operation. Further, using the P channel MOSFETs to constitute the amplifier circuit realizes a reduction of flicker noise and allows the amplifier circuit to be manufactured by the same CMOS process as the CMOS digital circuit.

    摘要翻译： 用于放大AM广播信号的RF放大器电路21通过使用级联的P沟道MOSFET4和5构成。该级联连接实现了P沟道MOSFET 4的源极和栅极之间的反馈电容的减小，从而提供稳定的操作 。 此外，使用P沟道MOSFET构成放大器电路实现了闪烁噪声的降低，并且允许通过与CMOS数字电路相同的CMOS工艺制造放大器电路。