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公开(公告)号：EP0193820A3
公开(公告)日：1988-01-07
申请号：EP86102335
申请日：1986-02-22
CPC分类号： H01L31/022425 , H01L21/0272 , H01L31/0224 , H01L31/046 , Y02E10/50
摘要： A method for forming a thin film pattern comprising the steps in sequence of forming a lift-off layer directly on a substrate wherein a pattern of the lift-off layer is reverse to a desired thin film pattern, forming a thin film on the substrate, removing an undesirable portion of the thin film together with the lift-off layer; and a method for producing a semiconductor device comprising the steps in sequence of forming a first electrode on an insulated substrate, removing a part of the first electrode, forming a semiconductor including amorphous material on the first electrode, forming a lift-off layer on the semiconductor including amorphous material at such a place whereon a second electrode is not desired to be formed, and forming a second electrode on the semiconductor. According to the present invention, a thin film pattern can be formed at low production cost, with high productivity and accuracy, and with less danger during the process.
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公开(公告)号：EP0193820A2
公开(公告)日：1986-09-10
申请号：EP86102335.6
申请日：1986-02-22
CPC分类号： H01L31/022425 , H01L21/0272 , H01L31/0224 , H01L31/046 , Y02E10/50
摘要： A method for forming a thin film pattern comprising the steps in sequence of forming a lift-off layer directly on a substrate wherein a pattern of the lift-off layer is reverse to a desired thin film pattern, forming a thin film on the substrate, removing an undesirable portion of the thin film together with the lift-off layer; and a method for producing a semiconductor device comprising the steps in sequence of forming a first electrode on an insulated substrate, removing a part of the first electrode, forming a semiconductor including amorphous material on the first electrode, forming a lift-off layer on the semiconductor including amorphous material at such a place whereon a second electrode is not desired to be formed, and forming a second electrode on the semiconductor.
According to the present invention, a thin film pattern can be formed at low production cost, with high productivity and accuracy, and with less danger during the process.摘要翻译： 一种用于形成薄膜图案的方法，包括以下步骤：直接在基板（1）上形成剥离层（2），其中剥离层的图案与期望的薄膜图案相反，形成 薄膜（3），与剥离层（2）一起去除薄膜（3）的不希望的部分; 以及一种半导体器件（8）的制造方法，包括以下步骤：在绝缘基板（4）上形成第一电极（5），去除第一电极（5）的一部分，形成包含非晶材料的半导体 6）在第一电极（5）上，在半导体上形成第二电极（7）的半导体的半导体层上形成剥离层，所述半导体包括无定形材料，其中不希望形成第二电极。 根据本发明，可以以低生产成本，高生产率和精确度地形成薄膜图案，并且在该过程中具有较小的危险。
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