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1.发明公开
公开(公告)号：EP0221531A3
公开(公告)日：1992-02-19
申请号：EP86115233.8
申请日：1986-11-04
CPC分类号： H01L23/147 , H01L21/4803 , H01L23/142 , H01L23/3732 , H01L2924/0002 , H05K1/053 , Y10T428/265 , Y10T428/30 , Y10T428/31678 , H01L2924/00
摘要： A high heat conductive insulated substrate comprising a substrate of which heat conductivity is not less than 50 W/mok, and a high heat conductive insulating layer coated on the substrate; and a method of producing a high heat conductive insulated substrate characterized in that an insulating layer is formed on a substrate by applying DC voltage and RF power to the substrate and providing magnetic field parallel to the surface of the substrate. The insulated substrate of the present invention has good heat conductivity, thermal resistance and smooth surface, whereby exfoliation of the film can be prevented.
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公开(公告)号：EP0193820A3
公开(公告)日：1988-01-07
申请号：EP86102335
申请日：1986-02-22
CPC分类号： H01L31/022425 , H01L21/0272 , H01L31/0224 , H01L31/046 , Y02E10/50
摘要： A method for forming a thin film pattern comprising the steps in sequence of forming a lift-off layer directly on a substrate wherein a pattern of the lift-off layer is reverse to a desired thin film pattern, forming a thin film on the substrate, removing an undesirable portion of the thin film together with the lift-off layer; and a method for producing a semiconductor device comprising the steps in sequence of forming a first electrode on an insulated substrate, removing a part of the first electrode, forming a semiconductor including amorphous material on the first electrode, forming a lift-off layer on the semiconductor including amorphous material at such a place whereon a second electrode is not desired to be formed, and forming a second electrode on the semiconductor. According to the present invention, a thin film pattern can be formed at low production cost, with high productivity and accuracy, and with less danger during the process.
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公开(公告)号：EP0193820A2
公开(公告)日：1986-09-10
申请号：EP86102335.6
申请日：1986-02-22
CPC分类号： H01L31/022425 , H01L21/0272 , H01L31/0224 , H01L31/046 , Y02E10/50
摘要： A method for forming a thin film pattern comprising the steps in sequence of forming a lift-off layer directly on a substrate wherein a pattern of the lift-off layer is reverse to a desired thin film pattern, forming a thin film on the substrate, removing an undesirable portion of the thin film together with the lift-off layer; and a method for producing a semiconductor device comprising the steps in sequence of forming a first electrode on an insulated substrate, removing a part of the first electrode, forming a semiconductor including amorphous material on the first electrode, forming a lift-off layer on the semiconductor including amorphous material at such a place whereon a second electrode is not desired to be formed, and forming a second electrode on the semiconductor.
According to the present invention, a thin film pattern can be formed at low production cost, with high productivity and accuracy, and with less danger during the process.摘要翻译： 一种用于形成薄膜图案的方法，包括以下步骤：直接在基板（1）上形成剥离层（2），其中剥离层的图案与期望的薄膜图案相反，形成 薄膜（3），与剥离层（2）一起去除薄膜（3）的不希望的部分; 以及一种半导体器件（8）的制造方法，包括以下步骤：在绝缘基板（4）上形成第一电极（5），去除第一电极（5）的一部分，形成包含非晶材料的半导体 6）在第一电极（5）上，在半导体上形成第二电极（7）的半导体的半导体层上形成剥离层，所述半导体包括无定形材料，其中不希望形成第二电极。 根据本发明，可以以低生产成本，高生产率和精确度地形成薄膜图案，并且在该过程中具有较小的危险。
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5.发明授权Process for producing a continuous web of an electrically insulated metallic substrate 失效一种制造电绝缘的金属基板作为连续带的方法。
公开(公告)号：EP0478010B1
公开(公告)日：1995-08-16
申请号：EP91120878.3
申请日：1984-11-27
发明人： Nakayama, Takehisa , Tsuge, Kazunori,c/o Kanegafuchi Kagaku Kogyo K.K. , Nishimura, Kunio,c/o Kanegafuchi Kagaku Kogyo K.K. , Tawada, Yoshihisa
IPC分类号： C23C16/30 , C23C14/06 , C23C14/18 , C23C16/54 , C23C14/56 , C23C16/02 , C23C14/02 , H01L31/00 , H05K3/00
CPC分类号： C23C16/545 , C23C14/021 , C23C14/562 , C23C16/02 , C23C16/0227 , H01L31/0392 , H01L31/1876 , H01L31/206 , H05K1/053 , Y02E10/50 , Y02P70/521
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6.发明授权
公开(公告)号：EP0144055B1
公开(公告)日：1992-07-22
申请号：EP84114295.3
申请日：1984-11-27
发明人： Nakayama, Takehisa , Nishimura, Kunio c/o Kanegafuchi Kagaku , Tsuge, Kazunori , Tawada, Yoshihisa
CPC分类号： C23C16/545 , C23C14/021 , C23C14/562 , C23C16/02 , C23C16/0227 , H01L31/0392 , H01L31/1876 , H01L31/206 , H05K1/053 , Y02E10/50 , Y02P70/521
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公开(公告)号：EP0137512B1
公开(公告)日：1991-01-16
申请号：EP84112305.2
申请日：1984-10-12
IPC分类号： H01B3/02
CPC分类号： H01B3/12 , H01L31/022425 , H01L31/204 , Y02E10/50 , Y02P70/521
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公开(公告)号：EP0328011A2
公开(公告)日：1989-08-16
申请号：EP89101974.7
申请日：1989-02-04
发明人： Murakami, Satoru , Hayashi, Akimine , Yamaguchi, Minori , Nakayama, Takehisa , Tawada, Yoshihisa , Kondo, Masataka , Takada, Jun
CPC分类号： H04N1/0312 , G02B6/42 , G02B6/4202 , G02B6/4204 , H01L27/14665 , H04N1/0311 , H04N1/0316
摘要： A photo sensor array comprising at least one transparent substrate and a photo sensitive portion provided on the substrate. An optical fiber portion is arranged in a transparent substrate whereinto light from a radiating portion enters. An optical unit or selfoc lens for transferring image to a photo sensor portion can be omitted so that the device can be miniaturized. A reader utilizing the above photo sensor array is also disclosed.
摘要翻译： 一种光传感器阵列，包括至少一个透明基板和设置在该基板上的光敏部分。 光纤部分布置在透明基板中，其中来自辐射部分的光进入。 可以省略用于将图像转印到光传感器部分的光学单元或自透镜，从而可以使该装置小型化。 还公开了利用上述光传感器阵列的读取器。
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9.发明公开
公开(公告)号：EP0478010A3
公开(公告)日：1992-05-13
申请号：EP91120878.3
申请日：1984-11-27
发明人： Nakayama, Takehisa , Tsuge, Kazunori,c/o Kanegafuchi Kagaku Kogyo K.K. , Nishimura, Kunio,c/o Kanegafuchi Kagaku Kogyo K.K. , Tawada, Yoshihisa
IPC分类号： C23C16/30 , C23C14/06 , C23C14/18 , C23C16/54 , C23C14/56 , C23C16/02 , C23C14/02 , H01L31/00 , H05K3/00
CPC分类号： C23C16/545 , C23C14/021 , C23C14/562 , C23C16/02 , C23C16/0227 , H01L31/0392 , H01L31/1876 , H01L31/206 , H05K1/053 , Y02E10/50 , Y02P70/521
摘要： A process for producing a continuous web of an insulated metalic substrate, comprising the steps of depositing an insulation layer on a continuous web of a metalic substrate by plasma CVD method or sputtering method, and depositing a back electrode on the insulation layer by sputtering method or vapor deposition method. According to the present invention, the insulated metalic substrate for a solar cell or printed circuit board can be produced in a continuous manner and in high productivity and quality.
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10.发明公开Process for producing a continuous web of an electrically insulated metallic substrate 失效Verfahren zum Herstellen eines elektrisch isolierten metallischen Substrats als kontinuierlichers乐队。
公开(公告)号：EP0478010A2
公开(公告)日：1992-04-01
申请号：EP91120878.3
申请日：1984-11-27
发明人： Nakayama, Takehisa , Tsuge, Kazunori,c/o Kanegafuchi Kagaku Kogyo K.K. , Nishimura, Kunio,c/o Kanegafuchi Kagaku Kogyo K.K. , Tawada, Yoshihisa
IPC分类号： C23C16/30 , C23C14/06 , C23C14/18 , C23C16/54 , C23C14/56 , C23C16/02 , C23C14/02 , H01L31/00 , H05K3/00
CPC分类号： C23C16/545 , C23C14/021 , C23C14/562 , C23C16/02 , C23C16/0227 , H01L31/0392 , H01L31/1876 , H01L31/206 , H05K1/053 , Y02E10/50 , Y02P70/521
摘要： A process for producing a continuous web of an insulated metalic substrate, comprising the steps of depositing an insulation layer on a continuous web of a metalic substrate by plasma CVD method or sputtering method, and depositing a back electrode on the insulation layer by sputtering method or vapor deposition method. According to the present invention, the insulated metalic substrate for a solar cell or printed circuit board can be produced in a continuous manner and in high productivity and quality.
摘要翻译： 一种用于制造绝缘金属基板的连续幅材的方法，包括以下步骤：通过等离子体CVD法或溅射法在金属基板的连续幅材上沉积绝缘层，并通过溅射法或在溅射方法上在绝缘层上沉积背电极; 气相沉积法。 根据本发明，用于太阳能电池或印刷电路板的绝缘金属基底可以连续地且高生产率和高质量地制造。
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