公开(公告)号：EP1201623A2

公开(公告)日：2002-05-02

申请号：EP01125326.7

申请日：2001-10-26

申请人： Kabushiki Kaisha Toshiba

发明人： Komatsu, Michyasu ,  Yamaguchi, Haruhiko ,  Naba, Takayuki ,  Yamaguchi, Hideki

IPC分类号： C04B35/587 ,  H01L23/15 ,  H01L21/48

CPC分类号： H01L23/15 ,  C04B35/584 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H05K1/0306 ,  Y10T29/49158 ,  Y10T428/2949 ,  H01L2924/00

摘要： The present invention provides a silicon nitride ceramic substrate composed of a silicon nitride sintered body in which maximum size of pore existing in grain boundary phase of the sintered body is 0.3µm or less, and having a thermal conductivity of 50W/mK or more and a three point bending strength of 500MPa or more, wherein a leak current is 1000nA or less when an alternative voltage of 1.5kV-100Hz is applied to a portion between front and back surfaces of the silicon nitride sintered body under conditions of a temperature of 25°C and a relative humidity of 70%. According to the above structure of the present invention, there can be provided a silicon nitride ceramic substrate capable of effectively suppressing a leak current generation when the above substrate is assembled into various power modules and circuit boards, and capable of greatly improving insulating property and operative reliability of power modules in which output power and capacity are greatly increased.

摘要翻译： 本发明提供一种由氮化硅烧结体构成的氮化硅陶瓷衬底，其中存在于烧结体的晶界相的孔的最大尺寸为0.3μm以下，导热率为50W / mK以上， 三点弯曲强度为500MPa以上的情况下，在温度25℃的条件下，在氮化硅烧结体的正面和背面的部分施加1.5kV-100Hz的替代电压时，漏电流为1000nA以下 ℃，相对湿度70％。 根据本发明的上述结构，可以提供一种氮化硅陶瓷基板，其能够有效地抑制上述基板组装成各种功率模块和电路板时产生的漏电流，能够大大提高绝缘性能和操作性 输出功率和容量大大提高的电源模块的可靠性。

公开(公告)号：EP1201623B1

公开(公告)日：2016-08-31

申请号：EP01125326.7

申请日：2001-10-26

申请人： Kabushiki Kaisha Toshiba

发明人： Komatsu, Michiyasu ,  Yamaguchi, Haruhiko ,  Naba, Takayuki ,  Yamaguchi, Hideki

IPC分类号： C04B35/587 ,  H01L23/15 ,  H01L21/48

CPC分类号： H01L23/15 ,  C04B35/584 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H05K1/0306 ,  Y10T29/49158 ,  Y10T428/2949 ,  H01L2924/00

公开(公告)号：EP1201623A3

公开(公告)日：2004-01-07

申请号：EP01125326.7

申请日：2001-10-26

申请人： Kabushiki Kaisha Toshiba

发明人： Komatsu, Michiyasu ,  Yamaguchi, Haruhiko ,  Naba, Takayuki ,  Yamaguchi, Hideki

IPC分类号： C04B35/587 ,  H01L23/15 ,  H01L21/48

CPC分类号： H01L23/15 ,  C04B35/584 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H05K1/0306 ,  Y10T29/49158 ,  Y10T428/2949 ,  H01L2924/00

摘要： The present invention provides a silicon nitride ceramic substrate composed of a silicon nitride sintered body in which maximum size of pore existing in grain boundary phase of the sintered body is 0.3µm or less, and having a thermal conductivity of 50W/mK or more and a three point bending strength of 500MPa or more, wherein a leak current is 1000nA or less when an alternative voltage of 1.5kV-100Hz is applied to a portion between front and back surfaces of the silicon nitride sintered body under conditions of a temperature of 25°C and a relative humidity of 70%. According to the above structure of the present invention, there can be provided a silicon nitride ceramic substrate capable of effectively suppressing a leak current generation when the above substrate is assembled into various power modules and circuit boards, and capable of greatly improving insulating property and operative reliability of power modules in which output power and capacity are greatly increased.