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1.发明授权
公开(公告)号：EP2832900B8
公开(公告)日：2019-09-11
申请号：EP12873342.5
申请日：2012-11-01
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2.发明公开
公开(公告)号：EP2832900A1
公开(公告)日：2015-02-04
申请号：EP12873342.5
申请日：2012-11-01
发明人： NARITA, Tetsuo , ITO, Kenji , TOMITA, Kazuyoshi , OTAKE, Nobuyuki , HOSHI, Shinichi , MATSUI, Masaki
IPC分类号： C30B29/38 , C23C16/34 , C30B25/20 , H01L21/205 , H01L33/32
CPC分类号： H01L29/2003 , C30B25/08 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02433 , H01L21/02488 , H01L21/0254 , H01L29/045 , H01L33/007
摘要： A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.
摘要翻译： 促进了硅单晶衬底上的III族氮化物单晶的阶跃流生长。 在硅单晶衬底的表面上形成定向为硅单晶的<111>轴的氧化物层，并且III族氮化物单晶在氧化物层的表面上结晶。 因此，经历晶体生长的III族氮化物单晶的<0001>轴取向为氧化物的c轴。 当硅单晶衬底具有杂散角时，发生III族氮化物单晶的阶跃流生长。 通过对形成在硅单晶和氧化物的界面处的氧化硅层进行脱氧，氧化物的取向得到改善。
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3.发明授权
公开(公告)号：EP2832900B1
公开(公告)日：2019-08-07
申请号：EP12873342.5
申请日：2012-11-01
发明人： NARITA, Tetsuo , ITO, Kenji , TOMITA, Kazuyoshi , OTAKE, Nobuyuki , HOSHI, Shinichi , MATSUI, Masaki
IPC分类号： H01L21/20 , C30B29/38 , C23C16/34 , C30B25/20 , H01L21/205 , H01L33/32 , C30B25/18 , C30B29/40 , H01L29/20 , H01L29/04 , H01L33/00
CPC分类号： H01L29/2003 , C30B25/08 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02433 , H01L21/02488 , H01L21/0254 , H01L29/045 , H01L33/007
摘要： A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.
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