公开(公告)号：EP1852896A1

公开(公告)日：2007-11-07

申请号：EP06290727.4

申请日：2006-05-05

申请人： Kinik Company

发明人： Chang, Hsiao-Kuo ,  Huang, Jen-Sheuan ,  Teng, Chien-Chung ,  Chung, Chih-Hsien ,  Wang, Ming-Hui

IPC分类号： H01L21/20 ,  C30B29/04

CPC分类号： H01L21/02527 ,  H01L21/02664

摘要： A diamond substrate and a method for fabricating the same are provided, wherein a protection layer is formed on one surface of a diamond layer in the process of forming the diamond layer by chemical vapor deposition process, for reducing the deformation of the diamond layer. Thereby the deformation of diamond substrate falls within the range of permitted tolerance of deformation, so that the performance of the diamond substrate is enhanced.

摘要翻译： 提供了一种金刚石基板及其制造方法，其中，在通过化学气相沉积工艺形成金刚石层的过程中，在金刚石层的一个表面上形成保护层，以减少金刚石层的变形。 由此金刚石基板的变形落入允许的变形容差范围内，从而提高了金刚石基板的性能。

公开(公告)号：EP1852895A1

公开(公告)日：2007-11-07

申请号：EP06290725.8

申请日：2006-05-05

申请人： Kinik Company

发明人： Chang, Hsiao-Kuo ,  Huang, Jen-Sheuan ,  Chen, Chih-Peng ,  Chen, Na-Ling ,  Wen, Shih-Pang

IPC分类号： H01L21/20 ,  H01L29/24

CPC分类号： H01L21/02527 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0254 ,  H01L21/02664

摘要： A diamond substrate and a method for fabricating the same are provided wherein a SiC layer is formed on a lower surface of a diamond layer for preventing the diamond layer from being deformed after the process of forming the diamond substrate, and then a semiconductor layer is formed on the diamond layer or directly formed on the surface of the SiC layer. Thereby, the lattice mismatch between the diamond film layer and the semiconductor layer is mitigated by the SiC layer, and the crystalline quality of the semiconductor layer is improved, the fabricating process of the diamond substrate is simplified, and the performance and stability are enhanced.

摘要翻译： 提供一种金刚石基板及其制造方法，其中在金刚石层的下表面上形成SiC层，以防止金刚石层在形成金刚石基板的过程之后变形，然后形成半导体层 在金刚石层上或直接形成在SiC层的表面上。 因此，通过SiC层减轻了金刚石膜层和半导体层之间的晶格失配，提高了半导体层的结晶质量，简化了金刚石基板的制造工艺，提高了性能和稳定性。