PLANARISING DAMASCENE STRUCTURES
    3.
    发明公开
    PLANARISING DAMASCENE STRUCTURES 审中-公开
    平面化的镶嵌结构的

    公开(公告)号:EP1812963A1

    公开(公告)日:2007-08-01

    申请号:EP05798172.2

    申请日:2005-11-02

    IPC分类号: H01L21/321 H01L21/768

    摘要: Manufacturing a damascene structure involves: forming a sacrificial layer (20) on a substrate (10) to protect an area around a recess (30) for the damascene structure, forming a barrier layer (40) in the recess, and in electrical contact with the sacrificial layer, forming the damascene structure (50) in the recess, and planarising. During the planarising the sacrificial layer reacts electrochemically with the barrier layer or with the damascene structure. This can alter a relative rate of removal of the damascene structure and the sacrificial layer so as to reduce dishing or protrusion of the damascene structure, and reduce copper residues, and reduce barrier corrosion. The barrier layer can be formed by ALCVD. The barrier material being one or more of WCN and TaN. The sacrificial layer can be TaN, TiN or W.

    METHOD OF MANUFACTURING A SUBSTRATE, HAVING A POROUS DIELECTRIC LAYER AND AIR GAPS, AND A SUBSTRATE
    4.
    发明公开
    METHOD OF MANUFACTURING A SUBSTRATE, HAVING A POROUS DIELECTRIC LAYER AND AIR GAPS, AND A SUBSTRATE 审中-公开
    一种用于生产衬底,多孔介质层和空气间隙和衬底

    公开(公告)号:EP1631985A1

    公开(公告)日:2006-03-08

    申请号:EP04744338.7

    申请日:2004-05-17

    IPC分类号: H01L21/768 H01L23/522

    摘要: A method to produce air gaps between metal lines (8(i)( and within dielectrics. The method consists of obtaining a dual damascene structure, applying a diffusion barrier layer (10) directly on the planarized surface and performing a lithography step, thus shielding the metal lines underneath the diffusion barrier layer. Optionally, some portions of large dielectric areas (6) between the metal lines (8(i)) are also shielded. The exposed diffusion barrier layer portions and underlying dielectric are etched. A layer of a material that can be decomposed in volatile components by heating to a temperature of typically between 150-450°C is applied and planarized by etching or CMP. A dielectric layer (20) that is permeable to the decomposition products is deposited and subsequently the substrate is heated. Then, the disposable layer decomposes and disappears through the permeable dielectric layer, leaving air gaps (22) behind in between the metal lines (8(i)) and the large dielectric areas.

    METHOD FOR FABRICATION OF IN-LAID METAL INTERCONNECTS
    5.
    发明公开
    METHOD FOR FABRICATION OF IN-LAID METAL INTERCONNECTS 审中-公开
    用于生产PICKLED金属连接

    公开(公告)号:EP1537600A1

    公开(公告)日:2005-06-08

    申请号:EP03793938.6

    申请日:2003-08-04

    IPC分类号: H01L21/768

    CPC分类号: H01L21/7684 H01L21/7688

    摘要: The present invention relates to a method for fabrication of in-laid metal inter onnects. The method comprises the steps of providing a substrate with a dielectr c material(l) on top thereof, depositing a protection layer(2) on top of the die ectric material, depositing a sacrificial layer (7) on top of the protection laye , the sacrificial layer having a mechanical strength that is lower than the mech nical strength of the protection layer, making an opening(3) through the sacrifi ial layer, through the protection layer and into the dielectric material, deposi ing a barrier layer (4)in the opening and on the sacrificial layer, depositing m tal material (5) on the barrier layer, the metal material filling the opening, re oving portions of the metal material existing beyond the opening by means of pol shing, and removing the barrier layer and the sacrificial layer in one polishing step.