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    CAPACITIVE MICRO-MACHINED TRANSDUCER AND METHOD OF MANUFACTURING THE SAME
    1.
    发明公开
    CAPACITIVE MICRO-MACHINED TRANSDUCER AND METHOD OF MANUFACTURING THE SAME 审中-公开
    MICRO机械MANUFACTURED电容转换器和方法及其生产

    公开(公告)号：EP2922707A2

    公开(公告)日：2015-09-30

    申请号：EP13792500.4

    申请日：2013-11-06

    申请人： Koninklijke Philips N.V.

    发明人： KLOOTWIJK, Johan Hendrik ,  MULDER, Marcel ,  DE WILD, Nico Maris Adriaan ,  KARAKAYA, Koray ,  VAN DEN HEUVEL, Cornelius Antonius

    IPC分类号： B60B1/02

    CPC分类号： G10K11/18 ,  B06B1/0292 ,  C23C16/45525 ,  C23C16/56

    摘要： The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

    BARRIER COATED NANO STRUCTURES
    2.
    发明公开
    BARRIER COATED NANO STRUCTURES 审中-公开
    有阻挡包纳米结构

    公开(公告)号：EP2867157A1

    公开(公告)日：2015-05-06

    申请号：EP13762895.4

    申请日：2013-06-25

    申请人： Koninklijke Philips N.V.

    发明人： WIMBERGER-FRIEDL, Reinhold ,  DE WITZ, Christianne Rossette Maria ,  VAN DEN HEUVEL, Cornelius Antonius

    IPC分类号： B82Y15/00 ,  G01N21/55 ,  G01N21/64 ,  G01N21/65

    CPC分类号： C12Q1/6869 ,  B82Y15/00 ,  C23C16/45555 ,  G01N21/648

    摘要： A device includes a nano-structure made of electrically conductive material. The nano-structure is covered by a barrier coating comprising Ti, Zr, Hf, Nb, Ta, Mo, Sc, Y, Ge, La, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, Sr, Al, B, Ba, Bi, and/or Mg oxide in a thickness of at least about 1 nm. The barrier coating is deposited by atomic layer deposition (ALD). A method of detecting a target compound uses the device for surface specifically creating an evanescent field, measuring the dielectric properties of a medium, detecting the presence or the concentration of a target compound, determining the primary structure of a target compound, determining a deviation of the target compound from a control value, amplifying a target compound, or monitoring the amplification of a target compound.