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    METHOD FOR MANUFACTURING PHOTOVOLTAIC CI(G)S-BASED THIN FILM USING FLUX HAVING LOW MELTING POINT, AND CI(G)S-BASED THIN FILM MANUFACTURED BY SAME
    1.
    发明公开
    METHOD FOR MANUFACTURING PHOTOVOLTAIC CI(G)S-BASED THIN FILM USING FLUX HAVING LOW MELTING POINT, AND CI(G)S-BASED THIN FILM MANUFACTURED BY SAME 审中-公开
    方法制造光电CI（G）S-薄膜使用具有熔点低，中制备CI（G）本处理的流程的S-THIN

    公开(公告)号：EP2811538A1

    公开(公告)日：2014-12-10

    申请号：EP13743766.1

    申请日：2013-01-31

    申请人： Korea Institute of Energy Research

    发明人： EO, Young-Joo ,  YOON, Kyung-Hoon ,  AHN, SeJin ,  GWAK, Jihye ,  YUN, Jae-Ho ,  CHO, Ara ,  SHIN, Kee-Shik ,  AHN, SeoungKyu ,  CHO, Jun-Sik ,  YOO, Jin-Su ,  PARK, Sang-Hyun ,  PARK, Joo-Hyung

    IPC分类号： H01L31/0749 ,  H01L31/042 ,  H01L31/18

    CPC分类号： H01L31/0322 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0326 ,  Y02E10/541 ,  Y02P70/521

    摘要： A method for fabricating a CI(G)S-based thin film using a flux having a low-melting temperature and a CI(G)S-based thin film fabricated thereby. The method comprises the steps of: (a) preparing CI(G)S-based nanoparticles; (b) preparing a slurry including the CI(G)S-based nanoparticles and a flux having a melting point of 30 to 400 °C; (c) coating the slurry on a substrate in a non-vacuum to form a CI(G)S-based precursor thin film; (d) drying the CI(G)S-based precursor thin film; and (e) performing selenization heat treatment of the CI(G)S-based precursor thin film using selenium (Se) vapor. According to the method, selenization heat treatment is performed at a lower temperature than that in a process of forming a CI(G)S-based thin film according to the prior art, and thus the fabrication cost can be reduced, while the growth of crystals in the thin film can be sufficiently enabled even at a low temperature.

    摘要翻译： 一种用于制造CI法（G）S-基于使用具有低熔融温度和一个CI的焊剂薄膜（G）S-系薄膜从而制造。 该方法包括以下步骤：（a）制备的CI（G）S-基于纳米颗粒; （B）制备的浆料包括CI（G）S-基于纳米颗粒和具有30℃熔点至400℃的通量; （C）涂布在非真空，以形成一个CI基板浆料基于S-（G）前体薄膜; （D）干燥CI基于S-（G）前体薄膜; 和（e）执行使用硒（Se）的蒸气CI基于S-（G）前体薄膜的硒化热处理。 。根据该方法，硒化热处理在在形成CI的处理比较低的温度下进行（G）S-系薄膜雅丁现有技术，且因此制造成本可以降低，而生长 在薄膜晶体可以甚至在低温下能够充分地使能。

    CIS/CIGS SOLAR CELL HAVING A REAR TCO LAYER AND PRODUCTION METHOD THEREFOR
    4.
    发明公开
    CIS/CIGS SOLAR CELL HAVING A REAR TCO LAYER AND PRODUCTION METHOD THEREFOR 有权
    CIS / CIGS-SOLARZELLE MIT EINER HINTEREN TCO-SCHICHT UND HERSTELLUNGSVERFAHRENDAFÜR

    公开(公告)号：EP2784829A1

    公开(公告)日：2014-10-01

    申请号：EP12852335.4

    申请日：2012-10-15

    申请人： Korea Institute of Energy Research

    发明人： EO, Young-Joo ,  YOON, Kyung-Hoon ,  GWAK, Jihye ,  YUN, Jae-Ho ,  AHN, Sejin ,  CHO, Ara ,  SHIN, Kee-Shik ,  AHN, SeoungKyu

    IPC分类号： H01L31/18 ,  B23K26/36

    CPC分类号： H01L31/0749 ,  H01L31/02 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0322 ,  Y02E10/541

    摘要： Disclosed herein are a CIS/CIGS solar cell and a method of manufacturing the same. The CIS/CIGS solar cell includes: a substrate; first and second molybdenum electrodes disposed on the substrate at a predetermined interval in parallel with each other; a TCO layer disposed on upper and lateral sides of the second molybdenum electrode; a buffer layer disposed on upper and lateral sides of the TCO layer to compensate for a difference in bandgap between the TCO layer and a light-absorbing layer; the light-absorbing layer disposed on the first molybdenum electrode, the buffer layer and an area of the substrate partially opened between the first molybdenum electrode and the buffer layer; and an antireflection layer disposed on the light-absorbing layer to minimize the reflection of externally-applied light. According to the CIS/CIGS solar cell, a buffer layer and a TCO layer are disposed at the rear side of a light-absorbing layer to prevent the amount of light incident upon the light-absorbing layer from being reduced by removing the incident light obstruction structure disposed on the light-absorbing layer, so the amount of light incident upon the light-absorbing layer can be maximized, thereby increasing the energy conversion efficiency of the solar cell.

    摘要翻译： 本文公开了CIS / CIGS太阳能电池及其制造方法。 CIS / CIGS太阳能电池包括：基板; 以预定的间隔彼此平行地设置在基板上的第一和第二钼电极; 设置在所述第二钼电极的上侧和外侧的TCO层; 设置在TCO层的上侧和外侧的缓冲层，以补偿TCO层和光吸收层之间的带隙差; 设置在所述第一钼电极上的所述光吸收层，所述缓冲层和在所述第一钼电极和所述缓冲层之间部分地开放的所述基板的区域; 以及设置在光吸收层上以减少外部施加的光的反射的抗反射层。 根据CIS / CIGS太阳能电池，缓冲层和TCO层设置在光吸收层的后侧，以防止入射到光吸收层的光量通过去除入射光障碍而减少 结构设置在光吸收层上，因此入射到光吸收层的光量可以最大化，从而提高太阳能电池的能量转换效率。

    METHOD FOR MANUFACTURING CIGS THIN-FILM SOLAR CELLS USING SUBSTRATES NOT CONTAINING NA, AND SOLAR CELL MANUFACTURED THEREBY
    6.
    发明公开
    METHOD FOR MANUFACTURING CIGS THIN-FILM SOLAR CELLS USING SUBSTRATES NOT CONTAINING NA, AND SOLAR CELL MANUFACTURED THEREBY 有权
    用于生产薄膜太阳电池CIGS不使用钠有基板

    公开(公告)号：EP2693496A1

    公开(公告)日：2014-02-05

    申请号：EP13761496.2

    申请日：2013-03-06

    申请人： Korea Institute of Energy Research

    发明人： EO, Young-Joo ,  YOON, Kyung-Hoon ,  AHN, SeJin ,  GWAK, Jihye ,  YUN, Jae-Ho ,  CHO, Ara ,  SHIN, Kee-Shik ,  AHN, SeoungKyu ,  CHO, Jun-Sik ,  YOO, Jin-Su ,  PARK, Sang-Hyun ,  PARK, Joo-Hyung

    IPC分类号： H01L31/0749 ,  H01L31/042 ,  H01L31/18

    CPC分类号： H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

    摘要： Disclosed herein is a method of manufacturing CIGS-based thin-film solar cell, including the steps of: forming molybdenum electrode on Na-free substrate (S1); forming Na supply sources on parts of the surface of the molybdenum electrode (S2); forming CIGS-based precursor thin film on the molybdenum electrode (S3); and heat-treating the CIGS-based precursor thin film with selenium to diffuse Na from the Na supply sources into the CIGS-based precursor thin film, thus forming CIGS-based thin film (S4). The method is advantageous in that the random diffusion of Na can be prevented due to using Na-free substrate, and that Na is supplied into CIGS-based thin film serving as a light-absorbing layer of a solar cell by additional Na supply sources, thus improving the efficiency of a solar cell.

    摘要翻译： 本发明公开了在制造方法基于CIGS的薄膜太阳能电池，其包括以下步骤：形成钼电极上的Na-游离底物（S1）; 形成在钼电极（S2）的表面的部分的Na的供给源; 形成在钼电极（S3）基于CIGS的前体薄膜; 和热处理与硒的基于CIGS的前体薄膜从供给源扩散的Na Na +进入基于CIGS的前驱体薄膜，从而形成基于CIGS的薄膜（S4）。 该方法是有利的，在没有Na组成的随机扩散，可以防止由于使用Na-游离底物，并做的Na供给到CIGS系薄膜用作由额外的Na的供给源的太阳能电池的光吸收层， 从而提高太阳能电池的效率。