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    METHOD FOR MANUFACTURING PHOTOVOLTAIC CI(G)S-BASED THIN FILM USING FLUX HAVING LOW MELTING POINT, AND CI(G)S-BASED THIN FILM MANUFACTURED BY SAME
    1.
    发明公开
    METHOD FOR MANUFACTURING PHOTOVOLTAIC CI(G)S-BASED THIN FILM USING FLUX HAVING LOW MELTING POINT, AND CI(G)S-BASED THIN FILM MANUFACTURED BY SAME 审中-公开
    方法制造光电CI（G）S-薄膜使用具有熔点低，中制备CI（G）本处理的流程的S-THIN

    公开(公告)号：EP2811538A1

    公开(公告)日：2014-12-10

    申请号：EP13743766.1

    申请日：2013-01-31

    申请人： Korea Institute of Energy Research

    发明人： EO, Young-Joo ,  YOON, Kyung-Hoon ,  AHN, SeJin ,  GWAK, Jihye ,  YUN, Jae-Ho ,  CHO, Ara ,  SHIN, Kee-Shik ,  AHN, SeoungKyu ,  CHO, Jun-Sik ,  YOO, Jin-Su ,  PARK, Sang-Hyun ,  PARK, Joo-Hyung

    IPC分类号： H01L31/0749 ,  H01L31/042 ,  H01L31/18

    CPC分类号： H01L31/0322 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0326 ,  Y02E10/541 ,  Y02P70/521

    摘要： A method for fabricating a CI(G)S-based thin film using a flux having a low-melting temperature and a CI(G)S-based thin film fabricated thereby. The method comprises the steps of: (a) preparing CI(G)S-based nanoparticles; (b) preparing a slurry including the CI(G)S-based nanoparticles and a flux having a melting point of 30 to 400 °C; (c) coating the slurry on a substrate in a non-vacuum to form a CI(G)S-based precursor thin film; (d) drying the CI(G)S-based precursor thin film; and (e) performing selenization heat treatment of the CI(G)S-based precursor thin film using selenium (Se) vapor. According to the method, selenization heat treatment is performed at a lower temperature than that in a process of forming a CI(G)S-based thin film according to the prior art, and thus the fabrication cost can be reduced, while the growth of crystals in the thin film can be sufficiently enabled even at a low temperature.

    摘要翻译： 一种用于制造CI法（G）S-基于使用具有低熔融温度和一个CI的焊剂薄膜（G）S-系薄膜从而制造。 该方法包括以下步骤：（a）制备的CI（G）S-基于纳米颗粒; （B）制备的浆料包括CI（G）S-基于纳米颗粒和具有30℃熔点至400℃的通量; （C）涂布在非真空，以形成一个CI基板浆料基于S-（G）前体薄膜; （D）干燥CI基于S-（G）前体薄膜; 和（e）执行使用硒（Se）的蒸气CI基于S-（G）前体薄膜的硒化热处理。 。根据该方法，硒化热处理在在形成CI的处理比较低的温度下进行（G）S-系薄膜雅丁现有技术，且因此制造成本可以降低，而生长 在薄膜晶体可以甚至在低温下能够充分地使能。

    METHOD FOR MANUFACTURING CIGS THIN-FILM SOLAR CELLS USING SUBSTRATES NOT CONTAINING NA, AND SOLAR CELL MANUFACTURED THEREBY
    4.
    发明公开
    METHOD FOR MANUFACTURING CIGS THIN-FILM SOLAR CELLS USING SUBSTRATES NOT CONTAINING NA, AND SOLAR CELL MANUFACTURED THEREBY 有权
    用于生产薄膜太阳电池CIGS不使用钠有基板

    公开(公告)号：EP2693496A1

    公开(公告)日：2014-02-05

    申请号：EP13761496.2

    申请日：2013-03-06

    申请人： Korea Institute of Energy Research

    发明人： EO, Young-Joo ,  YOON, Kyung-Hoon ,  AHN, SeJin ,  GWAK, Jihye ,  YUN, Jae-Ho ,  CHO, Ara ,  SHIN, Kee-Shik ,  AHN, SeoungKyu ,  CHO, Jun-Sik ,  YOO, Jin-Su ,  PARK, Sang-Hyun ,  PARK, Joo-Hyung

    IPC分类号： H01L31/0749 ,  H01L31/042 ,  H01L31/18

    CPC分类号： H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

    摘要： Disclosed herein is a method of manufacturing CIGS-based thin-film solar cell, including the steps of: forming molybdenum electrode on Na-free substrate (S1); forming Na supply sources on parts of the surface of the molybdenum electrode (S2); forming CIGS-based precursor thin film on the molybdenum electrode (S3); and heat-treating the CIGS-based precursor thin film with selenium to diffuse Na from the Na supply sources into the CIGS-based precursor thin film, thus forming CIGS-based thin film (S4). The method is advantageous in that the random diffusion of Na can be prevented due to using Na-free substrate, and that Na is supplied into CIGS-based thin film serving as a light-absorbing layer of a solar cell by additional Na supply sources, thus improving the efficiency of a solar cell.

    摘要翻译： 本发明公开了在制造方法基于CIGS的薄膜太阳能电池，其包括以下步骤：形成钼电极上的Na-游离底物（S1）; 形成在钼电极（S2）的表面的部分的Na的供给源; 形成在钼电极（S3）基于CIGS的前体薄膜; 和热处理与硒的基于CIGS的前体薄膜从供给源扩散的Na Na +进入基于CIGS的前驱体薄膜，从而形成基于CIGS的薄膜（S4）。 该方法是有利的，在没有Na组成的随机扩散，可以防止由于使用Na-游离底物，并做的Na供给到CIGS系薄膜用作由额外的Na的供给源的太阳能电池的光吸收层， 从而提高太阳能电池的效率。