FLEXIBLE ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR

    公开(公告)号:EP3367438A1

    公开(公告)日:2018-08-29

    申请号:EP17765757.4

    申请日:2017-03-09

    IPC分类号: H01L27/12 G09F9/30

    摘要: Provided are a flexible electronic device and a manufacturing method thereof. The flexible electronic device (200) comprises a flexible substrate (210) and a device layer formed on the flexible substrate (210). The device layer comprises a semiconductor structure (220) and a wire structure (230) connected to the semiconductor structure, the wire structure (230) having an extension direction same to a channel direction of the semiconductor structure (220). The extension direction of the first wire structure (230) forms an included angle smaller than 90° with respect to a stretching direction of the flexible substrate (210). In the flexible electronic device (200) and manufacturing method thereof of the present invention, the channel direction of the semiconductor structure (220) and the extension direction of the first wire structure (230) are adjusted, such that the semiconductor structure (220) and the first wire structure (230) are least affected by a stress, thus ensuring electrical property and flexibility of the flexible electronic device (200).

    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, DISPLAY PANEL AND DISPLAY APPARATUS

    公开(公告)号:EP3425677A1

    公开(公告)日:2019-01-09

    申请号:EP17759199.7

    申请日:2017-02-27

    摘要: Provided are a thin film transistor and a manufacturing method thereof, a display panel, and a display apparatus. The thin film transistor comprises an active region (11), a gate insulating layer (12), a gate (13), a source (14) and a drain (15), a passivation layer (16), and a planarization layer (17) that are successively formed on a flexible substrate (10), wherein a protective layer (18) is formed between the passivation layer (16) and the planarization layer (17), and located directly above the active region (11) and the gate (13). The protective layer (18) is used to protect the semiconductor material of the thin film transistor in a perpendicular area of protective layer (18). Therefore, the stress on part of the materials of the thin film transistor is reduced during bending, and damage to the semiconductor material is avoided during bending of the thin film transistor device, thus improving the quality of the device.