FLEXIBLE ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR

    公开(公告)号:EP3367438A1

    公开(公告)日:2018-08-29

    申请号:EP17765757.4

    申请日:2017-03-09

    IPC分类号: H01L27/12 G09F9/30

    摘要: Provided are a flexible electronic device and a manufacturing method thereof. The flexible electronic device (200) comprises a flexible substrate (210) and a device layer formed on the flexible substrate (210). The device layer comprises a semiconductor structure (220) and a wire structure (230) connected to the semiconductor structure, the wire structure (230) having an extension direction same to a channel direction of the semiconductor structure (220). The extension direction of the first wire structure (230) forms an included angle smaller than 90° with respect to a stretching direction of the flexible substrate (210). In the flexible electronic device (200) and manufacturing method thereof of the present invention, the channel direction of the semiconductor structure (220) and the extension direction of the first wire structure (230) are adjusted, such that the semiconductor structure (220) and the first wire structure (230) are least affected by a stress, thus ensuring electrical property and flexibility of the flexible electronic device (200).

    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
    3.
    发明公开
    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号:EP3306669A1

    公开(公告)日:2018-04-11

    申请号:EP16802547.6

    申请日:2016-06-01

    IPC分类号: H01L29/41

    摘要: Embodiments of the present invention provide a thin film transistor and a preparation method thereof. The thin film transistor include an upper gate electrode (1), a lower gate electrode (4), an upper insulating layer (6), a lower insulating layer (7), a semiconductor layer (5), a source electrode (2) and a drain electrode (3). The lower insulating layer (7) is arranged on the lower gate electrode (4), the semiconductor layer (5) is arranged on the lower insulating layer (7), the semiconductor layer (5) is respectively lapped with the source electrode (2) and the drain electrode (3), the upper insulating layer (6) covers the semiconductor layer (5), and the upper gate electrode (1) is arranged on the upper insulating layer (6). In a plane parallel to a conducting channel in the semiconductor layer (5), there is a first gap (8) between an orthographic projection of the upper gate electrode (1) and an orthographic projection of the source electrode (2), and there is a second gap (9) between the orthographic projection of the upper gate electrode (1) and an orthographic projection of the drain electrode (3).

    摘要翻译: 本发明实施例提供一种薄膜晶体管及其制备方法。 该薄膜晶体管包括上栅电极(1),下栅电极(4),上绝缘层(6),下绝缘层(7),半导体层(5),源电极(2) 和漏电极(3)。 下绝缘层(7)设置在下栅电极(4)上,半导体层(5)设置在下绝缘层(7)上,半导体层(5)分别与源电极(2) )和漏电极(3),上绝缘层(6)覆盖半导体层(5),上栅电极(1)设置在上绝缘层(6)上。 在与半导体层(5)中的导电沟道平行的平面中,在上栅电极(1)的正交投影和源电极(2)的正投影之间存在第一间隙(8),并且在那里 是上栅电极(1)的正交投影和漏电极(3)的正交投影之间的第二间隙(9)。

    DISPLAY PANEL, DISPLAY SCREEN, AND DISPLAY TERMINAL

    公开(公告)号:EP3706175A1

    公开(公告)日:2020-09-09

    申请号:EP19846394.5

    申请日:2019-05-05

    IPC分类号: H01L27/32

    摘要: The present disclosure relates to a display panel, a display screen, and a terminal device. The display panel includes a substrate, a first pixel electrode disposed on the substrate, a pixel definition layer disposed on a side of the first pixel electrode away from the substrate and including a plurality of pixel openings to expose a surface of the first pixel electrode, and a first type of separation pillar disposed on the pixel definition layer. A width of the first type of separation pillar changes continuously or intermittently in an extending direction thereof. The extending direction of the first type of separation pillar is parallel to the substrate. The width is a dimension of a projection of the first type of separation pillar on the substrate in a direction perpendicular to the extending direction of the first type of separation pillar.