摘要:
A two-dimensional photonic crystal surface emitting laser light source according to the present invention includes a two-dimensional photonic crystal made of a plate-shaped body material provided with a periodic arrangement of identically-shaped holes 242A and an active layer provided on one side of the two-dimensional photonic crystal. The hole 242A is not located on a first half-line 251 extending from the gravity center G1 of the hole in a direction within the plane of the two-dimensional photonic crystal, while the hole 242A is located at least on a portion of a second half-line 252 extending from the gravity center G1 in the direction opposite to the first half-line 251. Injecting electric charges into the active layer generates light, which creates an electric field that encircles the gravity center G1 within the two-dimensional photonic crystal. For a given point on the second half-line 252 at which the hole 242A is located, there is no hole at a point that is symmetrical to the aforementioned point with respect to the gravity center G1, so that there is a difference in the refractive index between the two points. Thus, the electric field vectors at the two points are prevented from canceling each other due to destructive interference, so that the resultant laser light is stronger than conventional examples.
摘要:
An objective of the present invention is to provide a surface emitting laser capable of selectively generating a laser oscillation in the fundamental mode and thereby emitting a single-wavelength laser light. In a surface emitting laser including an active layer and a two-dimensional photonic crystal provided on one side of the active layer, a reflector 45 or 46 is provided at least at a portion of the circumference of the two-dimensional photonic crystal. The reflector has a reflectance distribution in which the reflectance has a maximum value at a position where the amplitude envelope of the fundamental mode of an internal resonance light created within the two-dimensional photonic crystal. This design strengthens the fundamental mode while suppressing the second mode, thus enabling the laser oscillation in the fundamental mode to be selectively obtained, so that a single-wavelength laser light can be emitted.
摘要:
A two-dimensional photonic-crystal laser 10 includes: a substrate 11 made of an n-type semiconductor; a p-type cladding layer (p-type semiconductor layer) 131 provided on an upper side of the substrate 11 and made of a p-type semiconductor; an active layer 14 provided on an upper side of the p-type cladding layer 131; a two-dimensional photonic-crystal layer 16 provided on an upper side of the active layer 14 and including a plate-shaped base body 161 made of an n-type semiconductor in which modified refractive index areas 162 whose refractive index differs from the base body 161 are periodically arranged; a first tunnel layer 121 provided between the substrate 11 and the p-type cladding layer 131 and made of an n-type semiconductor having a carrier density higher than a carrier density of the substrate 11; a second tunnel layer 122 provided in contact with the first tunnel layer 121 between the first tunnel layer 121 and the p-type cladding layer 131, and made of a p-type semiconductor having a carrier density higher than a carrier density of the p-type semiconductor layer; a first electrode 181 provided on a lower side of the substrate 11 or in the substrate 11; and a second electrode 182 provided on an upper side of the two-dimensional photonic-crystal layer 16.
摘要:
An objective of the present invention is to provide a laser capable of producing a radially polarized laser beam with an annular cross section. A laser oscillator 60 including an active layer 53 and two-dimensional photonic crystal 55 with circular holes 552 arranged in a square lattice pattern is provided between two electrodes 571 and 572. A first polarization control layer 581, which functions as a half-wave plate, and a second polarization control layer 582, which functions as a half-wave plate with a fast axis 592 extending at an angle of 45° to that of the first polarization control layer 581, are located on the laser oscillator 60. When a voltage is applied between the electrodes, a circumferentially polarized annular laser beam is emitted from the laser oscillator 60. When passing through the first polarization control layer 581 and the second polarization control layer 582, the laser beam is converted to a radially polarized beam. The resultant laser beam can be converged by a focusing lens to achieve a diameter smaller than the diffraction limit. Such a narrow beam is suitable for an optical pickup or many other devices.