Abstract:
A thin film transistor (TFT) array substrate is disclosed. The TFT array substrate includes a gate line (6L), a first gate electrode (6E1) branched from the gate line (6L), a gate insulating film (102) formed over the substrate (101), an active layer (ACT) formed on the gate insulating film (102), a data line (DL) formed to comprise a plurality of metal layers including a first metal layer and a second metal layer formed of copper (Cu), a source electrode (SE) formed on the gate insulating film (102) to comprise the remaining metal layer excluding the second metal layer among the plurality of the metal layers, and a drain electrode (DE) formed on the gate insulating film (102) to comprise the remaining metal layer excluding the second metal layer among the plurality of the metal layers.
Abstract:
An organic light emitting display device in accordance with various embodiments may include: an metal oxide layer (210), including at least one electrically conductive portion which forms at least one first electrode of the display device (211), and an electrically insulating portion (212) adjacent to the at least one electrically conductive portion (211), which forms an insulating bank of the display device; an emission layer (220) disposed over the metal oxide layer (210); and a second electrode (230) disposed over the emission layer (220).
Abstract:
An organic light emitting display device in accordance with various embodiments may include: an metal oxide layer (210), including at least one electrically conductive portion which forms at least one first electrode of the display device (211), and an electrically insulating portion (212) adjacent to the at least one electrically conductive portion (211), which forms an insulating bank of the display device; an emission layer (220) disposed over the metal oxide layer (210); and a second electrode (230) disposed over the emission layer (220).
Abstract:
An organic light emitting display device in accordance with various embodiments may include: an metal oxide layer (210), including at least one electrically conductive portion which forms at least one first electrode of the display device (211), and an electrically insulating portion (212) adjacent to the at least one electrically conductive portion (211), which forms an insulating bank of the display device; an emission layer (220) disposed over the metal oxide layer (210); and a second electrode (230) disposed over the emission layer (220).
Abstract:
A thin film transistor (TFT) array substrate is disclosed. The TFT array substrate includes a gate line (6L), a first gate electrode (6E1) branched from the gate line (6L), a gate insulating film (102) formed over the substrate (101), an active layer (ACT) formed on the gate insulating film (102), a data line (DL) formed to comprise a plurality of metal layers including a first metal layer and a second metal layer formed of copper (Cu), a source electrode (SE) formed on the gate insulating film (102) to comprise the remaining metal layer excluding the second metal layer among the plurality of the metal layers, and a drain electrode (DE) formed on the gate insulating film (102) to comprise the remaining metal layer excluding the second metal layer among the plurality of the metal layers.