Organic light emitting display device and method of manufacturing the same
    2.
    发明公开
    Organic light emitting display device and method of manufacturing the same 审中-公开
    Organische lichtemittierende Anzeigevorrichtung und Herstellungsverfahrendafür

    公开(公告)号:EP2808916A2

    公开(公告)日:2014-12-03

    申请号:EP14169839.9

    申请日:2014-05-26

    Abstract: An organic light emitting display device in accordance with various embodiments may include: an metal oxide layer (210), including at least one electrically conductive portion which forms at least one first electrode of the display device (211), and an electrically insulating portion (212) adjacent to the at least one electrically conductive portion (211), which forms an insulating bank of the display device; an emission layer (220) disposed over the metal oxide layer (210); and a second electrode (230) disposed over the emission layer (220).

    Abstract translation: 根据各种实施例的有机发光显示装置可以包括:金属氧化物层(210),其包括形成显示装置(211)的至少一个第一电极的至少一个导电部分,以及电绝缘部分 212),其邻近所述至少一个导电部分(211),其形成所述显示装置的绝缘堤; 设置在所述金属氧化物层(210)上方的发射层(220); 以及设置在所述发射层(220)上方的第二电极(230)。

    Organic light emitting display device and method of manufacturing the same
    4.
    发明公开
    Organic light emitting display device and method of manufacturing the same 审中-公开
    有机发光显示装置及其制造方法

    公开(公告)号:EP2808916A3

    公开(公告)日:2015-06-24

    申请号:EP14169839.9

    申请日:2014-05-26

    Abstract: An organic light emitting display device in accordance with various embodiments may include: an metal oxide layer (210), including at least one electrically conductive portion which forms at least one first electrode of the display device (211), and an electrically insulating portion (212) adjacent to the at least one electrically conductive portion (211), which forms an insulating bank of the display device; an emission layer (220) disposed over the metal oxide layer (210); and a second electrode (230) disposed over the emission layer (220).

    Abstract translation: 根据各种实施例的有机发光显示装置可以包括:金属氧化物层(210),其包括形成显示装置(211)的至少一个第一电极的至少一个导电部分;以及电绝缘部分 邻近于所述至少一个导电部分(211),所述至少一个导电部分(211)形成所述显示装置的绝缘堤岸; 布置在所述金属氧化物层(210)上的发射层(220); 和布置在发射层(220)之上的第二电极(230)。

    Thin film transistor array substrate and method of manufacturing the same
    5.
    发明公开
    Thin film transistor array substrate and method of manufacturing the same 审中-公开
    Dünnschichttistoristor-Array-Substrat und Verfahren zur Herstellung davon

    公开(公告)号:EP2808893A1

    公开(公告)日:2014-12-03

    申请号:EP13196182.3

    申请日:2013-12-09

    Abstract: A thin film transistor (TFT) array substrate is disclosed. The TFT array substrate includes a gate line (6L), a first gate electrode (6E1) branched from the gate line (6L), a gate insulating film (102) formed over the substrate (101), an active layer (ACT) formed on the gate insulating film (102), a data line (DL) formed to comprise a plurality of metal layers including a first metal layer and a second metal layer formed of copper (Cu), a source electrode (SE) formed on the gate insulating film (102) to comprise the remaining metal layer excluding the second metal layer among the plurality of the metal layers, and a drain electrode (DE) formed on the gate insulating film (102) to comprise the remaining metal layer excluding the second metal layer among the plurality of the metal layers.

    Abstract translation: 公开了薄膜晶体管(TFT)阵列基板。 TFT阵列基板包括栅极线(6L),从栅极线(6L)分支的第一栅电极(6E1),形成在基板(101)上的栅绝缘膜(102),形成有源层(ACT) 在栅极绝缘膜(102)上形成数据线(DL),其形成为包括由铜(Cu)形成的第一金属层和第二金属层的多个金属层,形成在栅极上的源电极(SE) 在所述多个金属层中包括除了所述第二金属层之外的剩余金属层的绝缘膜(102),以及形成在所述栅极绝缘膜(102)上的包含除了所述第二金属之外的剩余金属层 层之间的多个金属层。

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