公开(公告)号：EP2470473A2

公开(公告)日：2012-07-04

申请号：EP10812298.7

申请日：2010-08-26

申请人： LG Innotek Co., Ltd.

发明人： KIM, Byungsook ,  HAN, Jungeun ,  KIM, Sangmyung

IPC分类号： C01B31/36 ,  C04B35/565

CPC分类号： B82Y30/00 ,  C01B32/956 ,  C04B35/573 ,  C04B35/6261 ,  C04B35/6267 ,  C04B35/6268 ,  C04B35/63404 ,  C04B35/63408 ,  C04B35/63416 ,  C04B35/63424 ,  C04B35/63456 ,  C04B35/63496 ,  C04B2235/3418 ,  C04B2235/424 ,  C04B2235/48 ,  C04B2235/5288 ,  C04B2235/5436 ,  C04B2235/5454 ,  C04B2235/72

摘要： Disclosed herein is a high-purity carbon silicon pulverulent body manufacturing method and system. That is, a high-purity carbon silicon pulverulent body manufacturing method of the present invention includes the step of producing a mixture consisting of silicon sources and carbon sources in a mixer; and the step of synthesizing silicon carbide (SiC) pulverulent body by heating the mixture at a vacuum degree of larger than 0.03 torr and equal to and less than 0.5 torr and at a temperature of equal to or larger than 1300℃ and equal to and less than 1900℃.

摘要翻译： 本文公开了一种高纯度碳硅粉体制造方法和系统。 也就是说，本发明的高纯度碳硅粉末体制造方法包括在混合器中制造由硅源和碳源组成的混合物的步骤; 以及通过在大于0.03托和等于或小于0.5托的真空度下和在等于或大于1300℃的温度下加热混合物并合成碳化硅（SiC）粉末体的步骤，并等于或等于 小于1900°C

公开(公告)号：EP2470473B1

公开(公告)日：2017-12-20

申请号：EP10812298.7

申请日：2010-08-26

申请人： LG Innotek Co., Ltd.

发明人： KIM, Byungsook ,  HAN, Jungeun ,  KIM, Sangmyung

IPC分类号： C01B32/956 ,  C04B35/626 ,  C04B35/565 ,  C04B35/573 ,  B82Y30/00 ,  C04B35/634

CPC分类号： B82Y30/00 ,  C01B32/956 ,  C04B35/573 ,  C04B35/6261 ,  C04B35/6267 ,  C04B35/6268 ,  C04B35/63404 ,  C04B35/63408 ,  C04B35/63416 ,  C04B35/63424 ,  C04B35/63456 ,  C04B35/63496 ,  C04B2235/3418 ,  C04B2235/424 ,  C04B2235/48 ,  C04B2235/5288 ,  C04B2235/5436 ,  C04B2235/5454 ,  C04B2235/72

摘要： Disclosed herein is a high-purity carbon silicon pulverulent body manufacturing method and system. That is, a high-purity carbon silicon pulverulent body manufacturing method of the present invention includes the step of producing a mixture consisting of silicon sources and carbon sources in a mixer; and the step of synthesizing silicon carbide (SiC) pulverulent body by heating the mixture at a vacuum degree of larger than 0.03 torr and equal to and less than 0.5 torr and at a temperature of equal to or larger than 1300° C. and equal to and less than 1900° C.