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11 条记录 (耗时 0.013 秒)

    TRANSPARENT CONDUCTIVE FILM, PROCESS FOR PRODUCING SAME, AND ELECTRONIC DEVICE EMPLOYING TRANSPARENT CONDUCTIVE FILM
    2.
    发明公开
    TRANSPARENT CONDUCTIVE FILM, PROCESS FOR PRODUCING SAME, AND ELECTRONIC DEVICE EMPLOYING TRANSPARENT CONDUCTIVE FILM 审中-公开
    透明导电膜，其制造方法和电子设备符合透明导电膜

    公开(公告)号：EP2538417A1

    公开(公告)日：2012-12-26

    申请号：EP11744487.7

    申请日：2011-01-26

    申请人： LINTEC Corporation

    发明人： NAGAMOTO, Koichi ,  KONDO, Takeshi ,  SUZUKI, Yuta ,  NAGANAWA, Satoshi

    IPC分类号： H01B5/14 ,  B32B9/00 ,  C23C14/08 ,  C23C14/48 ,  H01B13/00

    CPC分类号： C23C14/086 ,  C08J7/045 ,  C08J7/123 ,  C08J2367/02 ,  C08J2483/04 ,  C23C14/027 ,  C23C14/48 ,  C23C14/562 ,  Y10T428/265 ,  Y10T428/31663

    摘要： The present invention enables provision of a transparent conductive film which exhibits excellent gas barrier performance and electrical conductivity and which exhibits low sheet resistivity and high electrical conductivity, even after having been placed in moist and high-temperature conditions.
    The conductive film of the present invention is in the form of a zinc oxide-based electrically conductive stacked structure, and the film includes a substrate and, formed on at least one surface of the substrate, (A) a gas barrier layer and (B) a transparent conductive layer formed of a zinc oxide-based conductive material, wherein the gas barrier layer is formed of a material containing at least oxygen atoms, carbon atoms, and silicon atoms, and includes a region in which the oxygen atom concentration gradually decreases and the carbon atom concentration gradually increases from the surface in the depth direction of the layer.

    摘要翻译： 本发明使得能够提供一种透明导电膜的表现出优异的气体阻隔性能和导电性以及其表现出低薄层电阻率和高导电性，即使在已经在潮湿和高温条件下被放置的。 本发明的导电膜是在氧化锌基导电堆叠结构的形式，并且膜包括基底和，形成于基板的至少一个表面上，（A）的气体阻隔层和（B ）形成的基于氧化锌的导电性材料，worin阻气层形成含有至少氧原子，碳原子和硅原子的材料制成，并且包括其中的氧原子浓度逐渐降低的区域的透明导电层 和碳原子浓度逐渐从层的深度方向上的表面增加。

    SURFACE-PROTECTING SHEET AND SEMICONDUCTOR WAFER LAPPING METHOD
    3.
    发明公开
    SURFACE-PROTECTING SHEET AND SEMICONDUCTOR WAFER LAPPING METHOD 审中-公开
    巴布亚新几内亚

    公开(公告)号：EP1681713A1

    公开(公告)日：2006-07-19

    申请号：EP04792363.6

    申请日：2004-10-14

    申请人： Lintec Corporation

    发明人： NAGAMOTO, Koichi ,  OHASHI, Hitoshi ,  TAKAHASHI, Kazuhiro

    IPC分类号： H01L21/304

    CPC分类号： B24B37/34 ,  B24B37/042 ,  C09J7/20 ,  C09J2201/28 ,  C09J2203/326 ,  H01L21/304 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834

    摘要： It is an object of the present invention to provide a surface protective sheet and a method for grinding a semiconductor wafer, by the use of which any dimple is not formed, nor occurs breakage and fouling of a wafer even when a wafer having high bumps which are highly densely arranged is ground to an extremely small thickness, and besides, no adhesive is left at the roots of the bumps after the surface protective sheet is peeled. The surface protective sheet of the invention is used for grinding a back surface of a semiconductor wafer, and in the surface protective sheet, one surface of a base sheet is provided with an opening portion having a diameter smaller than an outer diameter of a semiconductor wafer to be stuck, on said opening portion no adhesive layer being formed, and a portion which is provided around the opening portion and on which an adhesive layer is formed.

    摘要翻译： 本发明的目的是提供一种表面保护片和用于研磨半导体晶片的方法，即使没有形成任何凹坑，也不会发生晶片的断裂和结垢，即使当具有高凸点的晶片 高度密集地被研磨成非常小的厚度，此外，在剥离表面保护片之后，在凸块的根部处没有粘合剂残留。 本发明的表面保护片用于研磨半导体晶片的背面，在表面保护片中，基片的一个面设置有直径小于半导体晶片的外径的开口部 被卡在所述开口部分上，没有形成粘合剂层，以及设置在开口部周围并且形成有粘合剂层的部分。

    GAS BARRIER ADHESIVE SHEET, METHOD FOR PRODUCING SAME, ELECTRONIC MEMBER, AND OPTICAL MEMBER
    6.
    发明公开
    GAS BARRIER ADHESIVE SHEET, METHOD FOR PRODUCING SAME, ELECTRONIC MEMBER, AND OPTICAL MEMBER 审中-公开

    公开(公告)号：EP3650512A1

    公开(公告)日：2020-05-13

    申请号：EP19194115.2

    申请日：2012-07-25

    申请人： LINTEC Corporation

    发明人： FUCHI, Emi ,  KENMOCHI, Suguru ,  NAGANAWA, Satoshi ,  NAGAMOTO, Koichi

    IPC分类号： C09J7/38

    摘要： The present invention is a gas barrier pressure-sensitive adhesive sheet comprising at least one gas barrier layer and at least one pressure-sensitive adhesive layer, the at least one pressure-sensitive adhesive layer having a storage modulus at 23°C of 1.5×10 4 to 1.0×10 7 Pa, and other than a release sheet, each layer included in the gas barrier pressure-sensitive adhesive sheet does not satisfy either requirement 1 or 2:
    requirement 1: a paper or a plastic film having a thickness of 10 micrometer or more; and
    requirement 2: a plastic film having a tensile modulus at 23° C of 200 to 5000 MPa,
    the gas barrier pressure-sensitive adhesive sheet having a water vapor transmission rate at a temperature of 40° C and a relative humidity of 90% of 0.1 g/m 2 /day or less The present invention provides: a gas barrier pressure-sensitive adhesive sheet that makes it possible to easily provide the adherend with a gas barrier capability without significantly increasing the thickness of the gas barrier pressure-sensitive adhesive sheet, does not show delamination (separation) at the interface between the pressure-sensitive adhesive layer and another layer even when subjected to high-temperature/high-humidity conditions, and exhibits excellent bendability, a method for producing the same, an electronic member that includes the gas barrier pressure-sensitive adhesive sheet, and an optical member that includes the gas barrier pressure-sensitive adhesive sheet.

    TRANSPARENT CONDUCTIVE FILM, METHOD FOR PRODUCING SAME, AND ELECTRONIC DEVICE USING TRANSPARENT CONDUCTIVE FILM
    8.
    发明公开
    TRANSPARENT CONDUCTIVE FILM, METHOD FOR PRODUCING SAME, AND ELECTRONIC DEVICE USING TRANSPARENT CONDUCTIVE FILM 审中-公开
    透明导电膜，其制造方法和电子设备符合透明导电膜

    公开(公告)号：EP2556954A1

    公开(公告)日：2013-02-13

    申请号：EP11762728.1

    申请日：2011-03-25

    申请人： Lintec Corporation

    发明人： NAGAMOTO, Koichi ,  KONDO, Takeshi ,  SUZUKI, Yuta ,  IWAYA, Wataru ,  NAGANAWA, Satoshi

    IPC分类号： B32B9/00 ,  C23C14/48 ,  C23C14/58 ,  H01B5/14 ,  H01B13/00

    CPC分类号： C23C14/48 ,  C08J7/047 ,  C08J7/123 ,  C08J2367/02 ,  C08J2369/00 ,  C08J2483/14 ,  C23C14/562 ,  Y10T428/31663

    摘要： The invention provides a transparent conductive film, including a substrate and, formed on at least one surface of the substrate, a gas barrier layer and a transparent conductive layer, wherein the gas barrier layer is formed of a material containing at least oxygen atoms, nitrogen atoms, and silicon atoms, and includes a surface layer part which has an oxygen atom fraction of 60 to 75%, a nitrogen atom fraction of 0 to 10%, and a silicon atom fraction of 25 to 35%, each atom fraction being calculated with respect to the total number of the oxygen atoms, nitrogen atoms, and silicon atoms contained in the surface layer part and which has a film density of 2.4 to 4.0 g/cm 3 .

    摘要翻译： 本发明提供一种透明导电膜，电影，包括一个基底和，形成于该底物，气体阻挡层和透明导电层的至少一个表面上，worin气体阻隔层形成含有至少氧原子的材料时，氮的 原子和硅原子，并且包括具有60至75％，0〜10％的氮原子分数氧原子分数的表面层部分，和25至35％的硅原子分数，每个原子分数被计算 与包含在表面层部分和相对于氧原子的总数，氮原子和硅原子具有2.4至4.0g / cm 3的膜密度。

    PROTECTIVE STRUCTURE OF SEMICONDUCTOR WAFER, METHOD FOR PROTECTING SEMICONDUCTOR WAFER, MULTILAYER PROTECTIVE SHEET USED THEREIN, AND METHOD FOR PROCESSING SEMICONDUCTOR WAFER
    9.
    发明公开
    PROTECTIVE STRUCTURE OF SEMICONDUCTOR WAFER, METHOD FOR PROTECTING SEMICONDUCTOR WAFER, MULTILAYER PROTECTIVE SHEET USED THEREIN, AND METHOD FOR PROCESSING SEMICONDUCTOR WAFER 有权
    半导体晶片的保护结构，方法半导体晶片用于制造半导体晶片保护和方法

    公开(公告)号：EP1542274A1

    公开(公告)日：2005-06-15

    申请号：EP03791245.8

    申请日：2003-08-21

    申请人： Lintec Corporation

    发明人： SENOO, Hideo ,  NAGAMOTO, Koichi ,  HORIGOME, Katsuhiko ,  OHASHI, Hitoshi

    IPC分类号： H01L21/68 ,  H01L21/304 ,  C09J7/02

    CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834

    摘要： Disclosed herein is a semiconductor wafer protection structure including a semiconductor wafer and a protective sheet overlaid on a circuit surface of the semiconductor wafer, wherein the protective sheet has a larger diameter than the outer diameter of the semiconductor wafer.
    The invention provides semiconductor wafer protection structures and methods, and laminated protective sheet for use therein that enable prevention of damage to a wafer during grinding and transportation when the wafer is ground to an ultrathin thickness and transported. Also provided is a process for processing a semiconductor wafer whereby damage to the wafer can be reduced during application and cutting of an adhesive sheet.

    摘要翻译： 公开了一种半导体晶片的保护结构，其包括半导体晶片和覆盖在半导体晶片的电路面的保护片，worin保护片具有比所述半导体晶片的外直径更大的直径。 本发明提供了半导体晶片保护的结构和方法，和层叠保护片用于其中没有研磨和运输过程中能够防止在晶片损坏的当晶片研磨至在超薄的厚度和运送。 这样提供了一种用于处理半导体晶片，由此可以粘合片的应用和切割期间被降低到晶片损伤的方法。

    TRANSPARENT CONDUCTIVE LAMINATE BODY AND ORGANIC THIN FILM DEVICE
    10.
    发明公开
    TRANSPARENT CONDUCTIVE LAMINATE BODY AND ORGANIC THIN FILM DEVICE 审中-公开
    KÖRPERMIT EINER TRANSPARENTEN LEITENDEN BESCHICHTUNG UND ORGANISCHEDÜNNSCHICHTVORRICHTUNG

    公开(公告)号：EP2662865A1

    公开(公告)日：2013-11-13

    申请号：EP11854618.3

    申请日：2011-11-28

    申请人： LINTEC Corporation

    发明人： MUTO, Tsuyoshi ,  NAGAMOTO, Koichi ,  KATO, Kunihisa

    IPC分类号： H01B5/14 ,  B32B15/08 ,  H01L51/42 ,  H01L51/50 ,  H05B33/28

    CPC分类号： H01L51/5203 ,  B82Y10/00 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0047 ,  H01L51/4253 ,  H01L51/442 ,  H01L51/5212 ,  Y02E10/549 ,  Y02P70/521

    摘要： A problem is to provide a transparent conductive laminate body that has a low surface resistivity and an organic thin film device using the laminate body, and the problem is solved by a transparent conductive laminate body having a transparent substrate having laminated directly on at least one surface thereof in this order a conductive metal pattern layer and a conductive organic layer having a conductive organic polymer compound, a material for forming the conductive metal pattern layer being at least one metal selected from gold, silver, copper and platinum, or an alloy having the metal, and an organic thin film device using the same.

    摘要翻译： 一个问题是提供一种具有低表面电阻率的透明导电层压体和使用层压体的有机薄膜器件，并且问题是通过一种透明导电层压体解决，该透明导电层压体具有直接层压在至少一个表面上的透明基板 该导电性金属图案层和具有导电性有机高分子化合物的导电性有机层，形成导电性金属图案层的材料为选自金，银，铜和铂中的至少一种金属的材料，或者具有 金属和使用其的有机薄膜器件。