Method for producing piezoelectric films with rotating magnetron sputtering system
    1.
    发明公开
    Method for producing piezoelectric films with rotating magnetron sputtering system 有权
    使用旋转磁控溅射系统的压电膜的制造方法

    公开(公告)号:EP1124270A3

    公开(公告)日:2005-09-14

    申请号:EP01300748.9

    申请日:2001-01-29

    Abstract: A quality-assurance method is described that is useful in the fabrication of piezoelectric films of electronic devices, particularly resonators for use in RF filters. For example, the method comprises determining the surface roughness of an insulating layer on which the piezoelectric film is to be deposited and achieving a surface roughness for the insulating layer that is sufficiently low to achieve the high-quality piezoelectric film. According to one aspect of the invention, the low surface roughness for the insulating layer is achieved with use of a rotating magnet magnetron system for improving the uniformity of the deposited layer. According to other aspects of the invention, the high-quality piezoelectric film is assured by optimizing deposition parameters including determination of a "cross-over point" for reactive gas flow and/or monitoring and correcting for the surface roughness of the insulating layer pre-fabrication of the piezoelectric film.

    Method for producing piezoelectric films with rotating magnetron sputtering system
    2.
    发明公开
    Method for producing piezoelectric films with rotating magnetron sputtering system 有权
    Herstellungsverfahrenfürpiezoelektrische Filme mittels rotierendem Magnetronsputter-System

    公开(公告)号:EP1124270A2

    公开(公告)日:2001-08-16

    申请号:EP01300748.9

    申请日:2001-01-29

    Abstract: A quality-assurance method is described that is useful in the fabrication of piezoelectric films of electronic devices, particularly resonators for use in RF filters. For example, the method comprises determining the surface roughness of an insulating layer on which the piezoelectric film is to be deposited and achieving a surface roughness for the insulating layer that is sufficiently low to achieve the high-quality piezoelectric film. According to one aspect of the invention, the low surface roughness for the insulating layer is achieved with use of a rotating magnet magnetron system for improving the uniformity of the deposited layer. According to other aspects of the invention, the high-quality piezoelectric film is assured by optimizing deposition parameters including determination of a "cross-over point" for reactive gas flow and/or monitoring and correcting for the surface roughness of the insulating layer pre-fabrication of the piezoelectric film.

    Abstract translation: 描述了在制造电子器件的压电膜,特别是用于RF滤波器的谐振器中有用的质量保证方法。 例如,该方法包括确定要沉积压电膜的绝缘层的表面粗糙度,并且实现足够低以实现高质量压电膜的绝缘层的表面粗糙度。 根据本发明的一个方面,通过使用用于提高沉积层的均匀性的旋转磁体磁控管系统来实现绝缘层的低表面粗糙度。 根据本发明的其他方面,通过优化沉积参数来确保高质量的压电膜,包括确定反应气流的“交叉点”和/或监测和校正绝缘层预处理的表面粗糙度, 制造压电薄膜。

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