公开(公告)号：EP3686323B1

公开(公告)日：2024-07-31

申请号：EP18857897.5

申请日：2018-09-21

IPC分类号： C30B29/38 ,  C23C16/02 ,  C23C16/34 ,  C30B25/20 ,  H01L21/203 ,  H01L21/205 ,  C23C14/06 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/208 ,  H01L21/02 ,  C23C16/30 ,  C23C14/26 ,  C23C14/02 ,  C23C14/24

CPC分类号： C30B25/20 ,  C23C16/0209 ,  C30B25/186 ,  C30B29/403 ,  C23C14/0617 ,  C30B23/025 ,  H01L21/02658 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/0243 ,  H01L21/02634 ,  C23C16/303 ,  C23C14/02 ,  C23C14/26 ,  C23C14/243

公开(公告)号：EP2850219B1

公开(公告)日：2018-06-06

申请号：EP13729717.2

申请日：2013-06-18

申请人： Siemens Aktiengesellschaft

发明人： SCHREITER, Matthias ,  WERSING, Wolfram

IPC分类号： C23C14/22 ,  C23C14/00 ,  C23C14/04 ,  C23C14/06 ,  C23C14/08 ,  H01L41/316 ,  H03H9/17 ,  H03H3/02

CPC分类号： H01L41/316 ,  C23C14/0036 ,  C23C14/0068 ,  C23C14/044 ,  C23C14/0617 ,  C23C14/0641 ,  C23C14/086 ,  C23C14/225 ,  H03H3/02 ,  H03H9/171

公开(公告)号：EP3056585B1

公开(公告)日：2018-04-04

申请号：EP16154789.8

申请日：2016-02-09

申请人： Yantai Shougang Magnetic Materials Inc.

发明人： Jia, Daoning ,  Peng, Zhongjie ,  Yang, Kunkun

IPC分类号： C23C14/32 ,  C23C14/02 ,  C23C14/58 ,  C23C14/16 ,  C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  H01F1/057 ,  H01F41/02

CPC分类号： C23C14/3414 ,  C23C14/022 ,  C23C14/0617 ,  C23C14/16 ,  C23C14/325 ,  C23C14/35 ,  C23C14/5853 ,  H01F1/0577 ,  H01F41/026

摘要： According to the present invention there is provided a method for disposing an aluminum coating on Nd-Fe-B permanent magnets. The method includes the steps of: a) Performing a pre-treatment of the Nd-Fe-B permanent magnets; b) Fixing the Nd-Fe-B permanent magnets on a jig and placing the same in a multi-arc sputtering equipment; c) Evacuating the multi-arc sputtering equipment with a vacuum system until the pressure reaches 1×10 -2 Pa to 3×10 -2 Pa, then introducing argon gas until the pressure reaches 1×10 -1 Pa to 5×10 -1 Pa, starting bias voltage treatment of the Nd-Fe-B permanent magnets for 1 to 10 minutes at 800V to 1000V; d) Stopping bias voltage treatment and then evacuating the multi-arc sputtering equipment until the pressure reaches 1×10 -3 Pa to 8×10 -3 Pa, then refilling argon gas until the pressure reaches 3×10 -1 Pa to 5×10 -1 Pa, then starting arc deposition from a target source and maintain a DC current between 50A to 70A, turn on bias voltage and maintain voltage between 100V to 200V, and maintain coating the magnets for 0.5 to 5h; e) Cooling down on 20°C to 100°C and taking out the Nd-Fe-B permanent magnets from the multi-arc sputtering equipment; and f) Dipping the Nd-Fe-B permanent magnets into a passivating agent for 1 to 20 minutes and then rinse with water.

公开(公告)号：EP3075876A1

公开(公告)日：2016-10-05

申请号：EP16163357.3

申请日：2016-03-31

申请人： SPTS Technologies Limited

发明人： BURGESS, Stephen ,  HYNDMAN, Rhonda ,  RASTOGI, Amit ,  LIMA, Eduardo Paulo ,  WIDDICKS, Clive ,  RICH, Paul ,  HAYMORE, Scott ,  COOK, Daniel

IPC分类号： C23C14/35 ,  C23C14/34 ,  C23C14/06 ,  H01J37/34

CPC分类号： C23C14/0641 ,  C23C14/0617 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/351 ,  H01J37/32669 ,  H01J37/3405 ,  H01J37/3429 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3461 ,  H01J37/3467 ,  H01J37/3476

摘要： 1. A method of depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields;
in which a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

摘要翻译： 1.一种通过用产生一个或多个初级磁场的脉冲DC磁控管装置的脉冲DC磁控溅射将电介质材料沉积在腔室中的衬底上的方法; 其中溅射材料从靶溅射，其中所述靶和所述衬底被间隔在2.5至10cm的范围内分开，并且在所述腔室内产生二次磁场，这引起由所述脉冲DC磁控管装置产生的等离子体 朝向腔室的一个或多个壁膨胀。

公开(公告)号：EP3056585A1

公开(公告)日：2016-08-17

申请号：EP16154789.8

申请日：2016-02-09

申请人： Yantai Shougang Magnetic Materials Inc.

发明人： Jia, Daoning ,  Peng, Zhongjie ,  Yang, Kunkun

IPC分类号： C23C14/32 ,  C23C14/02 ,  C23C14/58 ,  C23C14/16

CPC分类号： C23C14/3414 ,  C23C14/022 ,  C23C14/0617 ,  C23C14/16 ,  C23C14/325 ,  C23C14/35 ,  C23C14/5853 ,  H01F1/0577 ,  H01F41/026

摘要： According to the present invention there is provided a method for disposing an aluminum coating on Nd-Fe-B permanent magnets. The method includes the steps of:
a) Performing a pre-treatment of the Nd-Fe-B permanent magnets;
b) Fixing the Nd-Fe-B permanent magnets on a jig and placing the same in a multi-arc sputtering equipment;
c) Evacuating the multi-arc sputtering equipment with a vacuum system until the pressure reaches 1×10 -2 Pa to 3×10 -2 Pa, then introducing argon gas until the pressure reaches 1×10 -1 Pa to 5×10 -1 Pa, starting bias voltage treatment of the Nd-Fe-B permanent magnets for 1 to 10 minutes at 800V to 1000V;
d) Stopping bias voltage treatment and then evacuating the multi-arc sputtering equipment until the pressure reaches 1×10 -3 Pa to 8×10 -3 Pa, then refilling argon gas until the pressure reaches 3×10 -1 Pa to 5×10 -1 Pa, then starting arc deposition from a target source and maintain a DC current between 50A to 70A, turn on bias voltage and maintain voltage between 100V to 200V, and maintain coating the magnets for 0.5 to 5h;
e) Cooling down on 20°C to 100°C and taking out the Nd-Fe-B permanent magnets from the multi-arc sputtering equipment; and
f) Dipping the Nd-Fe-B permanent magnets into a passivating agent for 1 to 20 minutes and then rinse with water.

摘要翻译： 根据本发明，提供了一种在Nd-Fe-B永磁体上设置铝涂层的方法。 该方法包括以下步骤：a）对Nd-Fe-B永磁体进行预处理; b）将Nd-Fe-B永磁体固定在夹具上并将其放置在多弧溅射设备中; c）用真空系统抽出多弧溅射设备，直到压力达到1×10 -2 Pa〜3×10 -2 Pa，然后引入氩气直至压力达到1×10 -1 Pa〜5×10〜 1Pa，在800V至1000V下对Nd-Fe-B永磁体进行1至10分钟的初始偏压处理; d）停止偏压处理，然后抽空多弧溅射设备，直到压力达到1×10 -3 Pa至8×10 -3 Pa，然后重新灌注氩气直至压力达到3×10 -1 Pa至5× 10 -1 Pa，然后从目标源开始电弧沉积，并保持50A至70A之间的直流电流，打开偏置电压并保持电压在100V至200V之间，并保持将磁体涂覆0.5至5h; e）在20℃至100℃下冷却并从多弧溅射设备中取出Nd-Fe-B永磁体; 和f）将Nd-Fe-B永磁体浸入钝化剂中1至20分钟，然后用水冲洗。

公开(公告)号：EP2226567A4

公开(公告)日：2016-03-09

申请号：EP08863858

申请日：2008-10-22

申请人： NIPPON ELECTRIC GLASS CO

发明人： IKEGAMI KOJI

IPC分类号： F24C15/10 ,  C03C17/09 ,  C03C17/22 ,  C03C17/36 ,  H05B6/12

CPC分类号： C03C17/36 ,  C03C17/3618 ,  C03C17/3626 ,  C03C17/3649 ,  C03C2218/15 ,  C23C14/0015 ,  C23C14/0036 ,  C23C14/0617 ,  C23C14/0652

摘要： To provide a top plate for a cooking appliance which can be given various colors and has good heat resistance. A top plate for a cooking appliance disposed over the cooking appliance includes: a glass substrate; an interference layer disposed on one side of the glass substrate and made of silicon nitride or aluminium nitride; a light shielding layer disposed on the interference layer and made of titanium or niobium; and a protective layer disposed on the light shielding layer and made of at least one material selected from the group consisting of silicon nitride, zirconium nitride, titanium nitride, tantalum nitride, tungsten nitride, and niobium nitride, wherein the interference layer and the protective layer are thin films each formed by physical vapor deposition in a gas atmosphere having a N 2 gas content of 90% to 100% by volume.

公开(公告)号：EP2979789A1

公开(公告)日：2016-02-03

申请号：EP14775620.9

申请日：2014-02-26

申请人： Sumitomo Electric Hardmetal Corp.

发明人： SETOYAMA, Makoto ,  OKAMURA, Katsumi ,  TSUKIHARA, Nozomi

IPC分类号： B23B27/14 ,  B23B27/20 ,  C23C14/06

CPC分类号： B23B27/148 ,  B23B2226/12 ,  B23B2228/105 ,  B23C2226/12 ,  B23C2228/10 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C23C14/0617 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/0664 ,  C23C28/042 ,  C23C28/044 ,  C23C28/42 ,  C04B35/5831 ,  C04B41/4529 ,  C04B41/5063 ,  C04B41/5068 ,  C04B41/5062 ,  C04B41/522 ,  C04B41/5066 ,  C04B41/5133 ,  C04B41/5061

摘要： In a surface-coated boron nitride sintered body tool, at least a cutting edge portion contains a cubic boron nitride sintered body and a coating layer (10) formed on a surface of the cubic boron nitride sintered body. A layer B (30) of the coating layer (10) is formed by alternately laminating one or more layers of each of two or more compound layers (31, 32) having different compositions. Each of the compound layers (31, 32) has a thickness not less than 0.5 nm and less than 30 nm.

摘要翻译： 在表面被覆氮化硼烧结体工具中，至少切削刃部包含立方晶氮化硼烧结体和在该立方晶氮化硼烧结体的表面形成的被覆层（10）。 通过交替地层压具有不同组成的两个或更多个化合物层（31,32）中的每一个的一个或多个层来形成涂层（10）的层B（30）。 每个化合物层（31,32）具有不小于0.5nm且小于30nm的厚度。

公开(公告)号：EP2862198A1

公开(公告)日：2015-04-22

申请号：EP13739811.1

申请日：2013-06-14

申请人： Oerlikon Advanced Technologies AG

发明人： CASTALDI, Lorenzo ,  KRATZER, Martin ,  FELZER, Heinz ,  MAMAZZA, Robert, Jr.

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L21/3065

CPC分类号： H01L21/02658 ,  C23C14/022 ,  C23C14/0617 ,  C23C14/541 ,  C30B23/063 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02631 ,  H01L21/02661

摘要： A method for depositing a Group III nitride semiconductor film on a substrate is provided that comprises: providing a sapphire substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; holding the substrate away from a substrate facing surface of a heater by a predetermined distance; heating the substrate to a temperature by using the heater whilst the substrate is held away from the substrate facing surface of the heater, and depositing a Group III nitride semiconductor film onto the conditioned surface of the substrate by a physical vapour deposition method whilst the substrate is held away from the substrate facing surface of the heater and forming an epitaxial Group III nitride semiconductor film with N-face polarity on the conditioned surface of the substrate.

公开(公告)号：EP1861924A1

公开(公告)日：2007-12-05

申请号：EP06717125.6

申请日：2006-03-23

申请人： RADI MEDICAL SYSTEMS AB

发明人： KATARDJIEV, Ilia ,  WINGQVIST, Gunilla ,  BJURSTRÖM, Johan

IPC分类号： H03H3/02 ,  H01L41/24

CPC分类号： H01L41/316 ,  C23C14/0617 ,  C23C14/086 ,  C23C14/225 ,  H03H3/02

摘要： A method of producing a polycrystalline film of a metal compound, AlN or ZnO, on a substrate with a non-zero mean tilt of the c-axis relative to the surface normal of the substrate, is disclosed. The method comprises deposition of crystallites of said compound onto the substrate that has a suitable surface for crystal growth with tilted c-axis relative to the surface normal by operating a deposition system designed for sputtering of metal atoms from a target, in a gas mixture of inert gas and nitrogen or oxygen, respectively, at a process pressure such that the mean free path of sputtered metal atoms is comparable or larger than the target to substrate distance, the geometry of the deposition system being such that there exists at least one arbitrary area on the substrate where the distribution of the depositing flux is asymmetric relative to the surface normal at that area. A piezoelectric shear wave resonator comprising the polycrystalline film, especially for use in a liquid medium for mass loading and/or viscosity measurements and/or pressure measurements, and particularly for use as a biosensor or a pressure sensor, is also described

公开(公告)号：EP1296363B1

公开(公告)日：2006-07-26

申请号：EP01921940.1

申请日：2001-04-20

申请人： TOYODA GOSEI CO., LTD.

发明人： SENDA, Masanobu Toyoda Gosei Co., Ltd. ,  ITO, Jun Toyoda Gosei Co., Ltd. ,  CHIYO, Toshiaki Toyoda Gosei Co., Ltd. ,  SHIBATA, Naoki Toyoda Gosei Co., Ltd. ,  ASAMI, Shizuyo Toyoda Gosei Co., Ltd.

IPC分类号： H01L21/203 ,  H01L23/00

CPC分类号： C30B23/02 ,  C23C14/0036 ,  C23C14/0617 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/0062

摘要： A preferred condition for forming a Group III nitride compound semiconductor layer on a substrate by a sputtering method is proposed. When a first Group III nitride compound semiconductor player is formed on a substrate by a sputtering method, an initial voltage of a sputtering apparatus is selected to be not higher than 110 % of a sputtering voltage.