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1.发明公开Method of fabricating semicondutor thin film and method of fabricating hall-effect device 失效一种用于制造半导体薄膜及其制造方法的霍尔效应器件的方法。
公开(公告)号：EP0632485A2
公开(公告)日：1995-01-04
申请号：EP94108235.6
申请日：1994-05-27
CPC分类号： H01L43/08 , H01L21/02381 , H01L21/02466 , H01L21/02502 , H01L21/02549 , H01L21/02631 , H01L43/065 , Y10S438/974
摘要： A method of fabricating a semiconductor thin film (4) is initiated with preparing a substrate (1) having a surface consisting of a single crystal of Si. The surface has an oxide film. Then, the oxide film is removed. The dangling bonds of the Si atoms on the surface are terminated with hydrogen atoms. An initial layer (2) is formed on the substrate of the single crystal of Si terminated with the hydrogen atoms, of at least one selected from the group consisting of Al, Ga, and In. A buffer layer (3) containing at least In and Sb is formed on the initial layer. A semiconductor thin film (4) containing at least In and Sb is formed on the buffer layer (3) at a temperature higher than the temperature at which the buffer layer (3) is started to be formed.
There is also disclosed a method of fabricating a Hall-effect device. This method is initiated with forming a semiconductor thin film by making use of the above-described fabrication method. Then, electrodes are attached to the thin film.摘要翻译： 一种制造半导体薄膜的方法与制备具有表面由Si的单晶的衬底开始。 表面有氧化物的电影。 然后，将氧化膜被除去。 表面上硅原子的悬空键终止氢原子。 初始层形成在Si的单晶中的至少一个与氢原子封端的，从所述组自由Al，Ga和In中选择的底物。 包含缓冲层至少In与Sb的形成的初始层上。 一种半导体薄膜至少包含In和Sb被形成在比缓冲层开始被形成的温度更高的温度下在缓冲层上。 因此，存在游离缺失盘制造霍尔效应器件的方法。 这个方法与通过使用上述制造方法形成的半导体薄膜发起。 然后，将电极连接到薄膜。
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2.发明授权Method of fabricating semiconductor thin film and method of fabricating hall-effect device 失效一种用于制造半导体薄膜及其制造方法的霍尔效应组装方法
公开(公告)号：EP0632485B1
公开(公告)日：1999-12-22
申请号：EP94108235.6
申请日：1994-05-27
CPC分类号： H01L43/08 , H01L21/02381 , H01L21/02466 , H01L21/02502 , H01L21/02549 , H01L21/02631 , H01L43/065 , Y10S438/974
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3.发明公开Method of fabricating semicondutor thin film and method of fabricating hall-effect device 失效一种用于制造半导体薄膜及其制造方法的霍尔效应器件的方法。
公开(公告)号：EP0632485A3
公开(公告)日：1995-08-23
申请号：EP94108235.6
申请日：1994-05-27
CPC分类号： H01L43/08 , H01L21/02381 , H01L21/02466 , H01L21/02502 , H01L21/02549 , H01L21/02631 , H01L43/065 , Y10S438/974
摘要： A method of fabricating a semiconductor thin film (4) is initiated with preparing a substrate (1) having a surface consisting of a single crystal of Si. The surface has an oxide film. Then, the oxide film is removed. The dangling bonds of the Si atoms on the surface are terminated with hydrogen atoms. An initial layer (2) is formed on the substrate of the single crystal of Si terminated with the hydrogen atoms, of at least one selected from the group consisting of Al, Ga, and In. A buffer layer (3) containing at least In and Sb is formed on the initial layer. A semiconductor thin film (4) containing at least In and Sb is formed on the buffer layer (3) at a temperature higher than the temperature at which the buffer layer (3) is started to be formed.
There is also disclosed a method of fabricating a Hall-effect device. This method is initiated with forming a semiconductor thin film by making use of the above-described fabrication method. Then, electrodes are attached to the thin film.
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