公开(公告)号：EP1220304A3

公开(公告)日：2008-10-08

申请号：EP01130923.4

申请日：2001-12-27

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Ishibashi, Akihiko ,  Tsujimura, Ayumu ,  Hasegawa, Yoshiaki ,  Otsuka, Nobuyuki ,  Sugahara, Gaku ,  Miyanaga, Ryoko ,  Shimamoto, Toshitaka ,  Harafuji, Kenji ,  Ban, Yuzaburoji ,  Ohnaka, Kiyoshi

IPC分类号： H01L21/20 ,  H01L33/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

公开(公告)号：EP1220304A2

公开(公告)日：2002-07-03

申请号：EP01130923.4

申请日：2001-12-27

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Ishibashi, Akihiko ,  Tsujimura, Ayumu ,  Hasegawa, Yoshiaki ,  Otsuka, Nobuyuki ,  Sugahara, Gaku ,  Miyanaga, Ryoko ,  Shimamoto, Toshitaka ,  Harafuji, Kenji ,  Ban, Yuzaburoji ,  Ohnaka, Kiyoshi

IPC分类号： H01L21/20 ,  H01L33/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

摘要翻译： 用于制造本发明的氮化物半导体的制造方法包括以下步骤：（1）生长通过在由第一III族氮化物衬底的第一半导体层供给的第一III族原料和含有氮的V族源; 和（2）生长通过提供一个第二III族原料和含有氮的V族原料制成的第二III族氮化物的第一半导体层上的第二半导体层。 至少以下步骤：（1）和（2）包括供应在所述衬底的p型掺杂剂的步骤，和在所述第一半导体层和第二半导体层之间的界面附近区域生长所以没有的密度一个 p型掺杂剂局部增加。