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1.发明公开GATED FIELD EFFECT DEVICES AND METHODS OF FORMING A GATED FIELD EFFECT DEVICE 有权盖茨场效应器件中，生成GATES场效应元素的方法
公开(公告)号：EP1759415A2
公开(公告)日：2007-03-07
申请号：EP05756010.4
申请日：2005-05-31
CPC分类号： H01L29/4983 , H01L21/28194 , H01L29/512 , H01L29/517
摘要： This invention includes gated field effect devices, and methods of forming gated field effect devices. In one implementation, a gated field effect device includes a pair of source/drain regions having a channel region therebetween. A gate is received proximate the channel region between the source/drain regions. The gate has a gate width between the source/drain regions. A gate dielectric is received intermediate the channel region and the gate. The gate dielectric has at least two different regions along the width of the gate. The different regions are characterized by different materials which are effective to define the two different regions to have different dielectric constants k. Other aspects and implementations are contemplated.
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2.发明授权GATED FIELD EFFECT DEVICES AND METHODS OF FORMING A GATED FIELD EFFECT DEVICE 有权盖茨场效应器件中，生成GATES场效应元素的方法
公开(公告)号：EP1759415B1
公开(公告)日：2014-08-20
申请号：EP05756010.4
申请日：2005-05-31
CPC分类号： H01L29/4983 , H01L21/28194 , H01L29/512 , H01L29/517
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3.发明公开SUPPORT FOR VERTICALLY-ORIENTED CAPACITORS DURING THE FORMATION OF A SEMICONDUCTOR DEVICE 有权制造半导体装置的过程中为垂直定向的电容器支撑
公开(公告)号：EP1665372A2
公开(公告)日：2006-06-07
申请号：EP04786595.1
申请日：2004-08-26
IPC分类号： H01L21/8242 , H01L27/108 , H01L21/02
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L27/10894
摘要： A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure (86) which supports capacitor bottom plates (110) during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer (84) to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer (200), a capacitor top plate (202), and final supporting dielectric (204). An inventive structure is also described.
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