公开(公告)号：EP2718964A4

公开(公告)日：2014-11-26

申请号：EP12797279

申请日：2012-05-03

申请人： MICRON TECHNOLOGY INC

发明人： WOOD ALAN G ,  IRELAND PHILIP J

IPC分类号： H01L21/768 ,  H01L23/00 ,  H01L23/48

CPC分类号： H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5283 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/03444 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0348 ,  H01L2224/03845 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05083 ,  H01L2224/05094 ,  H01L2224/05096 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2924/04953 ,  H01L2924/0496 ,  H01L2924/01074 ,  H01L2924/04941

摘要： Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first part of the interconnect, and another part of the interconnect may be formed within such opening. Some embodiments include semiconductor constructions having a first part of a through-substrate interconnect extending partially through a semiconductor substrate from a first side of the substrate; and having a second part of the through-substrate interconnect extending from a second side of the substrate and having multiple separate electrically conductive fingers that all extend to the first part of the interconnect.

摘要翻译： 一些实施例包括形成穿过半导体衬底的互连的方法。 的开口可以形成穿过半导体衬底延伸中途，以及互连的一部分可以在该开口内形成。 另一个开口可以形成为从基板的第二侧延伸到互连的第一部分，以及互连的另一部分可以搜索开口内形成。 一些实施例包括具有通过从所述基板的第一侧上的半导体衬底部分地延伸贯穿互连衬底的第一部分半导体构造; 并具有从所述基板的第二侧延伸的贯穿互连衬底的第二部分和具有多个单独的导电指状物所做的一切延伸到互连件的第一部分。