公开(公告)号：EP2630660B1

公开(公告)日：2018-10-03

申请号：EP11788252.2

申请日：2011-10-20

申请人： Raytheon Company

发明人： GOOCH, Roland, W. ,  KOCIAN, Thomas, A. ,  BLACK, Stephen, H. ,  DIEP, Buu

IPC分类号： H01L27/146 ,  H01L23/10 ,  G01J5/04 ,  B81B7/00

CPC分类号： H01L27/14618 ,  B81B7/0077 ,  G01J5/045 ,  H01L23/10 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L27/14683 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05563 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/05669 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/291 ,  H01L2224/29144 ,  H01L2224/32225 ,  H01L2224/83815 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/05341 ,  H01L2924/014 ,  H01L2224/83 ,  H01L2924/0105

摘要： In accordance with particular embodiments, a method for packaging an incident radiation detector includes depositing an opaque solder resistant material on a first surface of a transparent lid substrate configured to cover at least one detector. The method also includes forming at least one cavity in the lid substrate. The method further includes forming a first portion of at least one hermetic seal ring on the opaque solder resistant material. The first portion of each hermetic seal ring surrounds a perimeter of a corresponding cavity in the lid substrate. The method also includes aligning the first portion of the at least one hermetic seal ring with a second portion of the at least one hermetic seal ring. The method additionally includes bonding the first portion of the at least one hermetic seal ring with the second portion of the at least one hermetic seal ring with solder.

公开(公告)号：EP2693474A3

公开(公告)日：2014-10-08

申请号：EP13177989.4

申请日：2013-07-25

申请人： IXYS CORPORATION

发明人： Zommer, Nathan

IPC分类号： H01L23/485 ,  H01L23/49 ,  H01L23/488 ,  H01L21/60 ,  H01L23/373 ,  H01L23/495

CPC分类号： H01L23/48 ,  H01L23/3735 ,  H01L23/4827 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L24/72 ,  H01L24/73 ,  H01L24/80 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L24/95 ,  H01L2224/03312 ,  H01L2224/0345 ,  H01L2224/035 ,  H01L2224/03505 ,  H01L2224/0381 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05076 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05687 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/0589 ,  H01L2224/0603 ,  H01L2224/06505 ,  H01L2224/08238 ,  H01L2224/4007 ,  H01L2224/40225 ,  H01L2224/40247 ,  H01L2224/40475 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/4911 ,  H01L2224/73221 ,  H01L2224/73251 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/80439 ,  H01L2224/80895 ,  H01L2224/84205 ,  H01L2224/84424 ,  H01L2224/84801 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/92 ,  H01L2224/92157 ,  H01L2224/9222 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/05432 ,  H01L2224/05139 ,  H01L2924/00015 ,  H01L2224/80 ,  H01L2224/84 ,  H01L2224/85 ,  H01L2224/08 ,  H01L2224/40 ,  H01L2224/48 ,  H01L2224/03 ,  H01L2924/207 ,  H01L2224/37099

摘要： A method of manufacturing a semiconductor die, comprising the steps of: (a) forming a plurality of separate amounts of silver nanoparticle paste on a top- side of a wafer (26) such that there is an amount of silver nanoparticle paste on a first aluminum pad (28) and such that there is no silver nanoparticle paste (29) on a second aluminum pad (27); and (b) sintering the amount of silver nanoparticle paste so that the amount of silver nanoparticle paste becomes a sintered silver structure disposed on the first aluminum pad (28) and so that the second aluminum pad (27) is not covered by any sintered silver layer.

公开(公告)号：EP2517239B1

公开(公告)日：2013-10-02

申请号：EP10796036.1

申请日：2010-12-21

申请人： United Monolithic Semiconductors GmbH

发明人： JONSSON, Günter ,  STIEGLAUER, Hermann

IPC分类号： H01L23/00 ,  H01L23/48 ,  H01L23/482

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L23/4827 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/0231 ,  H01L2224/02371 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/0508 ,  H01L2224/051 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05548 ,  H01L2224/05561 ,  H01L2224/05644 ,  H01L2224/291 ,  H01L2224/32221 ,  H01L2224/83101 ,  H01L2224/834 ,  H01L2224/83815 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/04941 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/05552

公开(公告)号：EP1842233A1

公开(公告)日：2007-10-10

申请号：EP06718008.3

申请日：2006-01-10

申请人： Micron Technology, Inc.

发明人： TANG, Sanh, D. ,  TUTTLE, Mark, E. ,  COOK, Keith, R.

IPC分类号： H01L21/60 ,  H01L23/485

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/04073 ,  H01L2224/05018 ,  H01L2224/05026 ,  H01L2224/05082 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/04941 ,  H01L2224/05552

摘要： Microelectronic workpieces that have bump sites over bond-pads and methods of fabricating such bump sites. One embodiment of such a workpiece, for example, includes a substrate having a plurality of microelectronic dies comprising integrated circuitry and bond-pads, such as copper bond-pads, electrically coupled to the integrated circuitry. The workpiece further includes (a) a dielectric structure having a plurality of openings with sidewalls projecting from corresponding bond- pads, and (b) a plurality of caps over corresponding bond-pads. The individual caps can include a discrete portion of a barrier layer attached to the bond-pads and the sidewalls of the openings, and a discrete portion of a cap layer on the barrier layer. The caps are electrically isolated from each other and self-aligned with corresponding bond-pads without forming a mask layer over the cap layer.

摘要翻译： 在焊盘上具有凸起部位的微电子工件以及制造这种凹凸点的方法。 例如，这种工件的一个实施例包括具有多个微电子管芯的衬底，该多个微电子管芯包括集成电路和电耦合到集成电路的接合焊盘，例如铜接合焊盘。 工件还包括（a）电介质结构，其具有多个开口，侧壁从相应的接合焊盘突出，以及（b）在相应的接合焊盘上的多个盖。 各个盖可以包括附着到接合垫和开口的侧壁的阻挡层的分立部分，以及阻挡层上的盖层的离散部分。 盖子彼此电隔离并且与对应的接合焊盘自对准，而不在盖层上形成掩模层。

公开(公告)号：EP1563539A1

公开(公告)日：2005-08-17

申请号：EP03781325.0

申请日：2003-10-14

申请人： INTEL CORPORATION

发明人： SESHAN, Krishna ,  JENG, Yoeng, Huie ,  DUN, Haiping

IPC分类号： H01L23/485

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05187 ,  H01L2224/05553 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01081 ,  H01L2224/45099

摘要： In one embodiment, the present invention includes an apparatus having a metal layer (110) with a pad (115) disposed above a substrate (100); and a cap (140) disposed above the metal layer having a first portion to provide for contact with a prove and a second portion to provide a bonding surface, and the cap is electrically coupled to the pad.

摘要翻译： 在一个实施例中，本发明包括具有金属层的装置，该金属层具有设置在基板上方的垫; 以及设置在所述金属层上方的帽，其具有第一部分以提供与探针和第二部分的接触以提供接合表面，并且所述帽电耦合到所述垫。

公开(公告)号：EP1483789A2

公开(公告)日：2004-12-08

申请号：EP03714137.1

申请日：2003-03-12

申请人： Freescale Semiconductor Inc. (A Delaware Corp)

发明人： DOWNEY, Susan, H. ,  MILLER, James, W. ,  HALL, Geoffrey, B.

IPC分类号： H01L23/528

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L2224/04042 ,  H01L2224/05 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05558 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06135 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/01004

摘要： An integrated circuit (50) has a wire bond pad (53). The wire bond pad (53) is formed on a passivation layer (18) over active circuitry (26) and/or electrical interconnect layers (24) of the integrated circuit (50). The wire bond pad (53) is connected to a plurality of final metal layer portions (51, 52). The plurality of final metal layer portions (51, 52) are formed in a final interconnect layer of the interconnect layers (24). In one embodiment, the bond pad (53) is formed from aluminum and the final metal layer pads are formed from copper. The wire bond pad (53) allows routing of conductors in a final metal layer (28) directly underlying the bond pad (53), thus allowing the surface area of the semiconductor die to be reduced.

摘要翻译： 集成电路（50）具有引线接合焊盘（53）。 引线接合焊盘（53）形成在集成电路（50）的有源电路（26）和/或电互连层（24）上的钝化层（18）上。 引线接合焊盘（53）连接到多个最终的金属层部分（51,52）。 多个最终金属层部分（51,52）形成在互连层（24）的最终互连层中。 在一个实施例中，接合焊盘（53）由铝形成，并且最终的金属层焊盘由铜形成。 引线接合焊盘（53）允许在直接位于接合焊盘（53）下方的最终金属层（21）中布线导体，从而允许半导体管芯的表面积减小。

公开(公告)号：EP0723294A3

公开(公告)日：1997-07-16

申请号：EP96100749.9

申请日：1996-01-19

申请人： MOTOROLA, INC.

发明人： Hsu, Ting-Chen

IPC分类号： H01L23/485 ,  H01L21/60

CPC分类号： H01L24/48 ,  H01L21/2007 ,  H01L23/53223 ,  H01L24/05 ,  H01L24/45 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/4807 ,  H01L2224/48458 ,  H01L2224/4847 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  Y10S438/958 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00

摘要： Bond pads (394, 106) and bond pad openings (62, 108) are formed such that the bond pad openings (62, 108) are asymmetric to the conductive sections (398, 106) of the bond pads (394, 106). If the bond pads are more likely to lift from the scribe line side of the bond pad (394, 106), the bond pad openings (62, 108) are formed such that the passivation layer (52) overlies more of the conductive section (398, 106) near the scribe line (40). If the bond pads (394, 106) are more likely to lift from the other side, the passivation layer (52) overlies more of the other side of the conductive section (398, 106). In addition to reducing the risk of lifting, contamination problems should also be reduced.

公开(公告)号：EP2544225A4

公开(公告)日：2018-07-25

申请号：EP11750546

申请日：2011-02-24

申请人： UNIV OSAKA

发明人： SUGANUMA KATSUAKI ,  KIM SEONGJUN

IPC分类号： H01L21/60 ,  B23K35/28 ,  C22C18/00 ,  H01L23/373 ,  H01L23/482 ,  H01L23/488

CPC分类号： C22C18/00 ,  B23K35/282 ,  B23K2201/40 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/04026 ,  H01L2224/05187 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/29 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29294 ,  H01L2224/29298 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/325 ,  H01L2224/32507 ,  H01L2224/83101 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/15787 ,  H01L2924/05432 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00012 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/014

摘要： In a semiconductor device 100 according to the present invention in which a semiconductor member 120 is stacked on a substrate 110, the semiconductor member 120 and the substrate 110 are bonded together by means of a semiconductor device bonding material 130 of which main component is zinc. Further, a coating layer to prevent diffusion of the semiconductor device bonding material 130 is provided on at least one of the surface of the substrate 110 and the surface of the semiconductor member 120. In addition, the coating layer 140 is configured such that a barrier layer 141 composed of nitride, carbide, or carbonitride and a protective layer 142 composed of a noble metal are stacked. Further, the nitride, the carbide, or the carbonitride composing the barrier layer 141 is selected so as to have free energy smaller than that of a material composing an insulating layer 111 provided in the substrate 110.

公开(公告)号：EP2414801A4

公开(公告)日：2016-11-16

申请号：EP10759186

申请日：2010-03-11

申请人： QUALCOMM INC

发明人： LIN MOU-SHIUNG ,  LEE JIN-YUAN ,  LO HSIN-JUNG ,  YANG PING-JUNG ,  LIU TE-SHENG

IPC分类号： G01L7/00 ,  G06F1/16 ,  G06F19/00 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/522 ,  H01L25/065 ,  H01L25/16 ,  H01L25/18

CPC分类号： G06F1/16 ,  G11C5/147 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/60 ,  H01L23/66 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/50 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L25/50 ,  H01L2223/6611 ,  H01L2223/6666 ,  H01L2224/02166 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02321 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/0237 ,  H01L2224/02371 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05024 ,  H01L2224/05027 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05541 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/0556 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/11 ,  H01L2224/11009 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/1191 ,  H01L2224/13 ,  H01L2224/13006 ,  H01L2224/1302 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13311 ,  H01L2224/13609 ,  H01L2224/1403 ,  H01L2224/1411 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/16265 ,  H01L2224/17181 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/32105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48111 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/4911 ,  H01L2224/49175 ,  H01L2224/4918 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81411 ,  H01L2224/81444 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2224/81895 ,  H01L2224/81903 ,  H01L2224/83101 ,  H01L2224/83104 ,  H01L2224/83851 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/92125 ,  H01L2224/92127 ,  H01L2224/92147 ,  H01L2224/92225 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1029 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01059 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/0361 ,  H01L2924/0665 ,  H01L2224/81 ,  H01L2224/83 ,  H01L24/78 ,  H01L2224/85 ,  H01L21/56 ,  H01L21/78 ,  H01L2924/0635 ,  H01L2924/07025 ,  H01L21/304 ,  H01L21/76898 ,  H01L2224/0231

公开(公告)号：EP2920810A2

公开(公告)日：2015-09-23

申请号：EP13811692.6

申请日：2013-12-02

申请人： Invensas Corporation

发明人： UZOH, Cyprian, Emeka

IPC分类号： H01L23/485 ,  H01L23/498 ,  H01L21/60 ,  H05K3/34 ,  H01L23/10 ,  H01L21/50

CPC分类号： H05K13/046 ,  H01L21/4853 ,  H01L21/50 ,  H01L21/76898 ,  H01L23/10 ,  H01L23/481 ,  H01L23/49811 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/98 ,  H01L2224/02372 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05138 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/13009 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13138 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/1319 ,  H01L2224/14131 ,  H01L2224/16146 ,  H01L2224/16235 ,  H01L2224/16501 ,  H01L2224/16505 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29138 ,  H01L2224/29147 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32501 ,  H01L2224/32505 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81075 ,  H01L2224/8112 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81825 ,  H01L2224/83075 ,  H01L2224/8312 ,  H01L2224/83193 ,  H01L2224/83825 ,  H01L2924/00014 ,  H01L2924/381 ,  H01L2924/04953 ,  H01L2924/01071 ,  H01L2924/01042 ,  H01L2924/01015 ,  H01L2924/04941 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/01031 ,  H01L2924/01034 ,  H01L2924/00012 ,  H01L2924/07025 ,  H01L2224/05552

摘要： A microelectronic assembly includes a first substrate having a surface and a first conductive element and a second substrate having a surface and a second conductive element. The assembly further includes an electrically conductive alloy mass joined to the first and second conductive elements. First and second materials of the alloy mass each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element to a relatively lower amount toward the second conductive element, and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element to a relatively lower amount toward the first conductive element.