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    Semiconductor device having a heat sink
    2.
    发明公开
    Semiconductor device having a heat sink 失效
    Halbleiteranordnung mit einerWärmesenke。

    公开(公告)号：EP0460785A1

    公开(公告)日：1991-12-11

    申请号：EP91300584.9

    申请日：1991-01-25

    申请人： MITSUBISHI DENKI KABUSHIKI KAISHA

    发明人： Shigihara, Kimio, c/o Mitsubishi Denki K.K. ,  Nagai, Yutaka, c/o Mitsubishi Denki K.K. ,  Aoyagi, Toshitaka, c/o Mitsubishi Denki K.K.

    IPC分类号： H01L23/373 ,  H01L21/48

    CPC分类号： H01L23/3738 ,  H01L21/4882 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/0021 ,  H01S5/02272 ,  H01S5/02484 ,  H01S5/0425 ,  H01L2924/00

    摘要： A semiconductor device having a semiconductor element (6) and a heat sink (1) radiating heat generated in the semiconductor element includes an amorphous semiconductor film (8) provided on the heat sink and the semiconductor element is put on the heat sink via the amorphous semiconductor film. Therefore, the stress, applied to the semiconductor element can be reduced because of the amorphous semiconductor film. In a construction where an amorphous semiconductor film comprising amorphous silicon or amorphous germanium is formed on the heat sink via a first metal film (9) and the semiconductor element is bonded to the amorphous semiconductor film via a second metal film (12), ohmic contact is made by alloys formed between the amorphous semiconductor film and the first and second metal film. Furthermore, in a construction where an amorphous semiconductor film is formed only at a region on the heat sink where the semiconductor element is put, and a metal film having electric resistance lower than that of the amorphous semiconductor film is formed on the amorphous semiconductor film and the heat sink, and the semiconductor element is formed on the heat sink via the amorphous semiconductor film and the metal film, a passage through which current flows is separated from a passage through which heat flows.

    摘要翻译： 具有半导体元件（6）和散热器（1）的半导体器件，散热器（1）在半导体元件中产生的热量包括设置在散热器上的非晶半导体膜（8），半导体元件经由非晶体 半导体膜。 因此，由于非晶半导体膜，可以减少施加于半导体元件的应力。 在通过第一金属膜（9）在散热片上形成包含非晶硅或非晶锗的非晶半导体膜的结构中，半导体元件经由第二金属膜（12）与非晶半导体膜接合时，欧姆接触 由形成在非晶半导体膜与第一和第二金属膜之间的合金制成。 此外，在仅在放置了半导体元件的散热器上的区域形成非晶半导体膜的结构中，在非晶半导体膜上形成电阻低于非晶半导体膜的金属膜， 散热器和半导体元件通过非晶半导体膜和金属膜形成在散热片上，电流流过的通道与热流过的通道分离。

    A semiconductor laser device
    5.
    发明公开
    A semiconductor laser device 失效
    半导体激光装置

    公开(公告)号：EP0603164A2

    公开(公告)日：1994-06-22

    申请号：EP94200223.9

    申请日：1991-04-17

    申请人： MITSUBISHI DENKI KABUSHIKI KAISHA

    发明人： Shigihara, Kimio, c/o Mitsubishi Denki K.K. ,  Nagai, Yutaka, c/o Mitsubishi Denki K.K. ,  Aoyagi, Toshitaka, c/o Mitsubishi Denki K.K.

    IPC分类号： H01S3/19 ,  H01S3/025 ,  H01S3/105 ,  H01S3/085

    CPC分类号： B82Y20/00 ,  H01S3/105 ,  H01S3/107 ,  H01S5/028 ,  H01S5/0285 ,  H01S5/0622 ,  H01S5/14 ,  H01S5/34 ,  H01S5/3418

    摘要： A semiconductor laser device includes a semiconductor laser element having an active layer comprising a quantum well structure or a multi-quantum well structure which allows n levels of quantum states (n ≧ 2) from the first quantum level to the n-th quantum level, in which the front facet reflectivity and the rear facet reflectivity are made asymmetric or low so that an oscillation occurs at the n-th quantum level, a reflecting mirror having a reflectivity which enables that an oscillation of the semiconductor element occurs at a quantum level lower than the n-th quantum level, and a reflecting mirror moving means for varying the oscillation wavelength of the semiconductor laser element by arranging the reflecting mirror in the neighborhood of the front facet or rear facet of the semiconductor laser element. Therefore, a semiconductor laser device which oscillates at desired light outputs at two or more wavelengths by quite a simple construction can be obtained.

    摘要翻译： 本发明提供一种半导体激光装置，其具有：具有由量子阱结构或多量子阱结构构成的活性层的半导体激光元件，该量子阱结构允许从第一量子能级到第n量子能级的n个量子态（n≥2） 其中前端面反射率和后端面反射率被制成非对称或低的，从而在第n量子能级处发生振荡，具有反射率的反射镜使得半导体元件的振荡能够以低量子级 以及反射镜移动装置，用于通过将反射镜布置在半导体激光器元件的前端面或后端面附近来改变半导体激光器元件的振荡波长。 因此，可以以非常简单的结构获得以所需光输出以两种或多种波长振荡的半导体激光器件。

    Semiconductor optical device
    6.
    发明公开
    Semiconductor optical device 失效
    Optische Halbleitervorrichtung。

    公开(公告)号：EP0562173A1

    公开(公告)日：1993-09-29

    申请号：EP92120670.2

    申请日：1992-12-03

    申请人： MITSUBISHI DENKI KABUSHIKI KAISHA

    发明人： Shigihara, Kimio, c/o Mitsubishi Denki K.K. ,  Aoyagi, Toshitaka c/o Mitsubishi Denki K.K.

    IPC分类号： H01S3/025 ,  H01L33/00

    CPC分类号： H01S5/028

    摘要： A semiconductor optical device includes a semiconductor laser having an effective refractive index n c , a first film having a refractive index n₁ and a thickness d₁, a second film having a refractive index n₂ and a thickness d₂, and a third film having a refractive index n₃ and a thickness d₃. The first to third films are disposed on a facet of the semiconductor laser. In this structure, the refractive indices and thicknesses of the first to third films are determined to satisfy that a characteristic matrix Xa of the whole three films is equal to a characteristic matrix Y of a single film whose refractive index n f is a square root of the effective refractive index n c of the semiconductor laser and whose thickness is obtained by dividing an oscillation wavelength λ of the semiconductor laser by 4n f . Therefore, a non-reflection film having no reflectivity at the oscillation wavelength of the semiconductor laser is attained, and the production of the non-reflection film is simplified.

    摘要翻译： 半导体光学器件包括具有有效折射率nc的半导体激光器，具有折射率n1和厚度d1的第一膜，具有折射率n2和厚度d2的第二膜和具有折射率n3的第三膜 和厚度d3。 第一至第三膜设置在半导体激光器的刻面上。 在该结构中，第一至第三膜的折射率和厚度被确定为满足整个三个膜的特征矩阵Xa等于折射率nf为平方根的单个膜的特征矩阵Y 半导体激光器的有效折射率nc，其厚度通过将半导体激光器的振荡波长λ除以4nf而获得。 因此，获得了在半导体激光器的振荡波长下没有反射率的非反射膜，并且非反射膜的制造被简化。