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公开(公告)号：EP0898799B1
公开(公告)日：2007-06-27
申请号：EP97918328.2
申请日：1997-05-07
IPC分类号： H01S3/10
CPC分类号： G02F1/1326 , G02F1/025 , G02F1/035 , G02F2201/305 , G02F2203/055 , H01S3/1055 , H01S5/0285 , H01S5/141
摘要： This invention discloses an electro-optically controlled optical element (300) including a diffraction grating (130); and a planar waveguide (122) associated with the diffraction grating (130), the diffraction grating (130) and the planar waveguide (122) being configured to undergo resonance of at least one of transmitted or reflected light at a wavelength which is selectable by means of an electrical input.
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公开(公告)号：EP1341277A2
公开(公告)日：2003-09-03
申请号：EP03250304.7
申请日：2003-01-17
发明人： Sidorin, Yakov
CPC分类号： H01S5/141 , H01S3/1055 , H01S5/005 , H01S5/0267 , H01S5/0285
摘要： In a tunable optical source, a zone plate device 100 is used to provide frequency selective feedback to a laser diode 110. The zone plate device 100 is positioned to receive an output mode of the laser diode 110 and to return a frequency selected image of the mode spot to the laser diode 110. By changing the refractive index of material of the zone plate device 100, it is possible to change the frequency providing the image at the point of return to the laser diode 110. This allows the zone plate device 100 to be used in tuning the optical source, without using moving parts. In an embodiment, the zonc plate device 100 is at least partially fabricated in an electro-optic material such as SBN:75 and can therefore be tuned by using electrodes to apply an electric field across it. The zone plate device 100 can be coupled directly to the laser diode 110 or via a waveguide section 105 which can be used to increase the output mode spot size from the laser diode 110 for delivery to the zone plate device 100. The zone plate device 100 can alternatively be used as a standalone component for filtering optical radiation from other sources or as a switch for switching the intensity or wavelength of optical radiation between different values. Tunable or switchable optical devices can be used for instance in communications, such as in wavelength division multiplexing.
摘要翻译： 在可调谐光源中，区域板装置100用于向激光二极管110提供频率选择反馈。区域板装置100被定位成接收激光二极管110的输出模式，并返回激光二极管110的频率选择图像 通过改变区域板装置100的材料的折射率，可以改变在返回点处提供图像的频率到激光二极管110.这允许区域板装置100 用于调谐光源，而不使用移动部件。 在一个实施例中，区域板装置100至少部分地以诸如SBN：75的电光材料制造，并且因此可以通过使用电极来调整以在其上施加电场。 区域板装置100可以直接耦合到激光二极管110或经由波导部分105，该波导部分105可用于增加来自激光二极管110的输出模式光点尺寸以便输送到区域板装置100.区域板装置100 可以替代地用作用于从其他源滤波光辐射的独立组件，或者用作用于在不同值之间切换光辐射的强度或波长的开关。 可调谐或可切换的光学器件可以用于例如在波分复用中的通信中。
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公开(公告)号：EP0932057A1
公开(公告)日：1999-07-28
申请号：EP99100969.7
申请日：1999-01-20
申请人： Parriaux, Olivier M.
CPC分类号： G02B5/1828 , G02B5/1861 , G02B2006/12107 , G02B2006/12116 , H01S3/08009 , H01S3/1055 , H01S3/106 , H01S5/0285 , H01S5/141
摘要： Dispositif de diffraction d'ondes lumineuses formé d'une couche diélectrique (4), d'une structure réfléchissante (12) agencée à une face inférieure (10) de cette couche et d'un réseau de diffraction (8) agencé à une face (6) de cette couche. La hauteur (H) de la couche est sélectionnée de manière à ce que la condition de résonance pour un mode à fuite dans cette couche pour au moins une onde incidente donnée, ayant une longueur d'onde λ et un angle d'incidence déterminé, soit sensiblement satisfaite. Ensuite, le réseau de diffraction présente une période spatiale sélectionnée pour que l'onde incidente soit diffractée essentiellement selon le premier ordre négatif de diffraction et sous angle de diffraction différent de l'angle d'incidence (hors de la condition de Littrow).
Il est prévu en particulier que soit l'angle d'incidence, soit l'angle de diffraction soit élevé, c'est-à-dire relativement proche de 90° depuis la direction normale au réseau de diffraction. Ce dispositif de diffraction permet d'obtenir une efficacité de diffraction très élevée, jusqu'à 100 %, même lorsque l'onde incidente est rasante.摘要翻译： 传播层的高度在入射波长处形成波导逃逸模式，并且衍射网络具有在低入射角处产生不同衍射级的周期，从而使强反射失真。
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公开(公告)号：EP0898799A2
公开(公告)日：1999-03-03
申请号：EP97918328.0
申请日：1997-05-07
CPC分类号： G02F1/1326 , G02F1/025 , G02F1/035 , G02F2201/305 , G02F2203/055 , H01S3/1055 , H01S5/0285 , H01S5/141
摘要： This invention discloses an electro-optically controlled optical element (300) including a diffraction grating (130); and a planar waveguide (122) associated with the diffraction grating (130), the diffraction grating (130) and the planar waveguide (122) being configured to undergo resonance of at least one of transmitted or reflected light at a wavelength which is selectable by means of an electrical input.
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公开(公告)号：EP0482733A1
公开(公告)日：1992-04-29
申请号：EP91303392.4
申请日：1991-04-17
发明人： Shigihara, Kimio, Mitsubishi Denki K.K., Optelec. , Nagai, Yutaka, Mitsubishi Denki K.K., Optelec. , Aoyagi, Toshitaka, Mitsubishi Denki K.K., Optelec.
CPC分类号： B82Y20/00 , H01S3/105 , H01S3/107 , H01S5/028 , H01S5/0285 , H01S5/0622 , H01S5/14 , H01S5/34 , H01S5/3418
摘要： A semiconductor laser device (1) includes a semiconductor laser element having an active layer (2) comprising a quantum well structure or a multi-quantum well structure which allows n levels of quantum states (n ≧ 2) from the first quantum level to the n-th quantum level, in which the front facet reflectivity (5) and the rear facet reflectivity (6) are made asymmetric or low so that an oscillation occurs at the n-th quantum level, a reflecting mirror (8) having a reflectivity which enables that an oscillation of the semiconductor element occurs at a quantum level lower than the n-th quantum level, and a reflecting mirror moving means for varying the oscillation wavelength of the semiconductor laser element (1) by arranging the reflecting mirror (8) in the neighborhood of the front facet or rear facet of the semiconductor laser element. Therefore, a semiconductor laser device which oscillates at desired light outputs at two or more wavelengths by quite a simple construction can be obtained.
摘要翻译： 半导体激光装置（1）包括具有包括量子阱结构或多量子阱结构的有源层（2）的半导体激光器元件，所述量子阱结构或多量子阱结构允许从第一量子能级到第二量子能级的n个量子态（n≥2） 其中前面反射率（5）和后面反射率（6）被制成非对称或低的以使得在第n量子能级发生振荡的第n个量子能级，具有反射率的反射镜（8） 其能够以低于第n量子能级的量子能级发生半导体元件的振荡，以及反射镜移动装置，用于通过布置反射镜（8）来改变半导体激光器元件（1）的振荡波长， 在半导体激光元件的前端面或后端面附近。 因此，可以以非常简单的结构获得以所需光输出以两种或多种波长振荡的半导体激光器件。
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公开(公告)号：EP1166171B1
公开(公告)日：2002-12-04
申请号：EP00931006.1
申请日：2000-04-03
IPC分类号： G02F1/01
CPC分类号： G02F1/0134 , G02F1/011 , G02F2201/307 , H01S5/0285 , H01S5/141 , H01S5/146
摘要： The invention relates to an electronically adjustable Bragg-grating filter module (FM) which comprises a piezoelectric actuator (1) with which the length of the Bragg-grating filter (3) can be modified. The change in length of the Bragg-grating filter can be precisely measured by means of a strain gauge (4). Since the centre frequency of the Bragg-grating filter (3) depends on its length this permits an indirect adjustment of the frequency. The above filter is especially suitable for remote-controlled add-drop modules (ADM). To eliminate the influences of the piezoelectric element during adjustment of the Bragg-grating filter frequency adjustment is carried out by means of a regulator circuit.
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公开(公告)号：EP0932057B1
公开(公告)日：2002-07-31
申请号：EP99100969.7
申请日：1999-01-20
申请人： Parriaux, Olivier M.
CPC分类号： G02B5/1828 , G02B5/1861 , G02B2006/12107 , G02B2006/12116 , H01S3/08009 , H01S3/1055 , H01S3/106 , H01S5/0285 , H01S5/141
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公开(公告)号：EP1166171A1
公开(公告)日：2002-01-02
申请号：EP00931006.1
申请日：2000-04-03
IPC分类号： G02F1/01
CPC分类号： G02F1/0134 , G02F1/011 , G02F2201/307 , H01S5/0285 , H01S5/141 , H01S5/146
摘要： The invention relates to an electronically adjustable Bragg-grating filter module (FM) which comprises a piezoelectric actuator (1) with which the length of the Bragg-grating filter (3) can be modified. The change in length of the Bragg-grating filter can be precisely measured by means of a strain gauge (4). Since the centre frequency of the Bragg-grating filter (3) depends on its length this permits an indirect adjustment of the frequency. The above filter is especially suitable for remote-controlled add-drop modules (ADM). To eliminate the influences of the piezoelectric element during adjustment of the Bragg-grating filter frequency adjustment is carried out by means of a regulator circuit.
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公开(公告)号：EP1155482A1
公开(公告)日：2001-11-21
申请号：EP00916767.7
申请日：2000-02-25
发明人： WIPIEJEWSKI, Torsten
IPC分类号： H01S5/18
CPC分类号： H01S5/18386 , H01S5/0281 , H01S5/0285 , H01S5/18311
摘要： The invention relates to a vertical resonator laser diode (10, 20). An active series of layers (3) is arranged between a first Bragg reflector layer series (2) and a second Bragg reflector layer series (4) in order to produce laser irradiation. Each Bragg reflector layer series is provided with a plurality of mirror pairs (22, 44). The two Bragg reflector layer series (2, 4) form a laser resonator. The two Bragg reflector layer series (2, 4) and the active series of layers (3) are arranged between a first (7) and a second electrical contact layer (8). One (4) of the two Bragg reflector layer series (2, 4) is partially permeable for laser irradiation which is produced in the active series of layers (3). At least one light absorbing layer (9) with a defined light absorption is arranged between the partially permeable Bragg reflector layer series (4) and the first electrical contact layer (7) or on the light emitting side of the first electrical contact layer (7).
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10.发明公开VERTICAL CAVITY SURFACE EMITTING LASERS WITH CONSISTENT SLOPE EFFICIENCIES 审中-公开面发射激光器VERTICAL RESONATOR并提高匹配的效率
公开(公告)号：EP1129512A1
公开(公告)日：2001-09-05
申请号：EP99964979.1
申请日：1999-11-12
发明人： SCOTT, Jeffrey, W.
IPC分类号： H01S3/085
CPC分类号： H01S5/183 , H01S5/0042 , H01S5/0201 , H01S5/02284 , H01S5/0285 , H01S5/0427
摘要： A vertical cavity surface emitting laser, VCSEL, (2) with variable tuning layer (10) for adjusting the slope of the laser (2) and method for manufacturing the same are disclosed. In practice, a VCSEL wafer is grown by any conventional technique, and fabricated into discrete lasers (2) while maintained in wafer form. The initial lasers (2) are then tested to determine characteristics, such as the slope efficiency distribution to within a target specification by altering the phase of the top facet reflectivity of the initial lasers (2). The resulting change in transmission directly changes the laser slope in a predictable fashion. The tuning step may be repeated, if necessary, to further refine the slope to the desired value. The method produces VCSELs (2) with similar or consistent slopes from a plurality of wafers. Also disclosed are an optical subassembly (110) and optical transceiver (130) incorporating the improved VCSELs.
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