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公开(公告)号：EP1501098A3
公开(公告)日：2007-05-09
申请号：EP04250187.4
申请日：2004-01-15
发明人： Yeh, Chih Chieh , Lai, Han Chao , Tsai, Wen Jer , Lu, Tao Cheng , Lu, Chih Yuan
CPC分类号： G11C17/18 , G11C11/5692 , G11C17/14 , G11C2213/72 , H01L27/101
摘要： An electrically programmable non-volatile memory cell comprises a first electrode, a second electrode and an inter-electrode layer, such as ultra-thin oxide, between the first and second electrodes which is characterized by progressive change in resistance in response to program stress of relatively low voltages. A programmable resistance representing stored data is established by stressing the inter-electrode layer between the electrodes. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.
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公开(公告)号：EP1503384A2
公开(公告)日：2005-02-02
申请号：EP04250188.2
申请日：2004-01-15
发明人： Yeh, Chih Chieh , Lai, Han Chao , Tsai, Wen Jer , Lu, Tao Cheng , Lu, Chih Yuan
IPC分类号： G11C11/56
CPC分类号： G11C17/14 , G11C11/5692 , G11C2211/5634 , G11C2211/5641 , H01L27/101
摘要： A method for programming a memory cell is based on applying stress to a memory cell, comprising a first electrode, a second electrode and an inter-electrode layer, to induce a progressive change in a property of the inter-electrode layer. The method includes a verify step including generating a signal, such as a cell current, indicating the value of the property in the selected memory cell. Then, the signal is compared with a reference signal to verify programming of the desired data. Because of the progressive nature of the change, many levels of programming can be achieved. The many levels of programming can be applied for programming a single cell more than once, without an erase process, to programming multiple bits in a single cell, and to a combination of multiple bit and multiple time of programming.
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公开(公告)号：EP1503383A2
公开(公告)日：2005-02-02
申请号：EP04250178.3
申请日：2004-01-15
发明人： Yeh, Chih Chieh , Lai, Han Chao , Tsai, Wen Jer , Lu, Tao Cheng , Lu, Chih Yuan
IPC分类号： G11C11/56 , H01L29/788
CPC分类号： H01L27/101 , G11C11/5692 , G11C17/06 , G11C17/14
摘要： A method for manufacturing an electrically programmable non-volatile memory cell comprises forming a first electrode on a substrate, forming an inter-electrode layer of material on the first electrode having a property which is characterized by progressive change in response to stress, and forming a second electrode over the inter-electrode layer of material. The inter-electrode layer comprises a dielectric layer, such as ultra-thin oxide, between the first and second electrodes. A programmable resistance, or other property, is established by stressing the dielectric layer, representing stored data. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.
摘要翻译： 一种用于制造电可编程非易失性存储单元的方法包括在基板上形成第一电极，在第一电极上形成具有特征在于应力的响应逐渐变化的特性的材料的电极间层， 第二电极在材料的电极间层之上。 电极间层包括在第一和第二电极之间的介电层，例如超薄氧化物。 可编程电阻或其他属性通过强调介电层来表示存储的数据来建立。 存储器单元的实施例适于在每个单元存储多个数据位和/或适于在不进行擦除处理的情况下编程一次以上。
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公开(公告)号：EP1503384A3
公开(公告)日：2007-07-18
申请号：EP04250188.2
申请日：2004-01-15
发明人： Yeh, Chih Chieh , Lai, Han Chao , Tsai, Wen Jer , Lu, Tao Cheng , Lu, Chih Yuan
CPC分类号： G11C17/14 , G11C11/5692 , G11C2211/5634 , G11C2211/5641 , H01L27/101
摘要： A method for programming a memory cell is based on applying stress to a memory cell, comprising a first electrode, a second electrode and an inter-electrode layer, to induce a progressive change in a property of the inter-electrode layer. The method includes a verify step including generating a signal, such as a cell current, indicating the value of the property in the selected memory cell. Then, the signal is compared with a reference signal to verify programming of the desired data. Because of the progressive nature of the change, many levels of programming can be achieved. The many levels of programming can be applied for programming a single cell more than once, without an erase process, to programming multiple bits in a single cell, and to a combination of multiple bit and multiple time of programming.
摘要翻译： 用于对存储器单元进行编程的方法是基于向包括第一电极，第二电极和电极间层的存储单元施加应力，以引起电极间层的性能的逐渐变化。 该方法包括验证步骤，包括产生指示所选择的存储单元中的属性值的诸如单元电流的信号。 然后，将信号与参考信号进行比较，以验证所需数据的编程。 由于变化的渐进性，可以实现多层次的编程。 多个编程级别可以应用于单个单元编程多次，无需擦除处理，可以编程单个单元中的多个位，以及多个位和多个编程时间的组合。
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公开(公告)号：EP1503383A3
公开(公告)日：2007-05-09
申请号：EP04250178.3
申请日：2004-01-15
发明人： Yeh, Chih Chieh , Lai, Han Chao , Tsai, Wen Jer , Lu, Tao Cheng , Lu, Chih Yuan
IPC分类号： G11C11/56 , H01L27/115 , H01L21/8246 , G11C17/16 , H01L29/788
CPC分类号： H01L27/101 , G11C11/5692 , G11C17/06 , G11C17/14
摘要： A method for manufacturing an electrically programmable non-volatile memory cell comprises forming a first electrode on a substrate, forming an inter-electrode layer of material on the first electrode having a property which is characterized by progressive change in response to stress, and forming a second electrode over the inter-electrode layer of material. The inter-electrode layer comprises a dielectric layer, such as ultra-thin oxide, between the first and second electrodes. A programmable resistance, or other property, is established by stressing the dielectric layer, representing stored data. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.
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公开(公告)号：EP1501098A2
公开(公告)日：2005-01-26
申请号：EP04250187.4
申请日：2004-01-15
发明人： Yeh, Chih Chieh , Lai, Han Chao , Tsai, Wen Jer , Lu, Tao Cheng , Lu, Chih Yuan
IPC分类号： G11C11/56
CPC分类号： G11C17/18 , G11C11/5692 , G11C17/14 , G11C2213/72 , H01L27/101
摘要： An electrically programmable non-volatile memory cell comprises a first electrode, a second electrode and an inter-electrode layer, such as ultra-thin oxide, between the first and second electrodes which is characterized by progressive change in resistance in response to program stress of relatively low voltages. A programmable resistance representing stored data is established by stressing the inter-electrode layer between the electrodes. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.
摘要翻译： 电可编程非易失性存储单元包括在第一和第二电极之间的第一电极，第二电极和诸如超薄氧化物之间的电极间层，其特征在于响应于程序应力的电阻逐渐变化 电压相对较低 表示存储数据的可编程电阻是通过施加电极之间的电极间层来建立的。 存储器单元的实施例适于在每个单元存储多个数据位和/或适于在不进行擦除处理的情况下编程一次以上。
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