公开(公告)号：EP1835535A3

公开(公告)日：2010-07-14

申请号：EP07005406.9

申请日：2007-03-15

申请人： Marvell World Trade Ltd.

发明人： Wu, Albert ,  Chen, Roawen

IPC分类号： H01L27/108 ,  H01L27/06 ,  H01L29/78 ,  H01L21/8242

CPC分类号： H01L27/108 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/10802 ,  H01L27/10844 ,  H01L27/10897 ,  H01L29/7841

摘要： An integrated circuit (210) includes a bulk technology integrated circuit (bulk IC) (30) including a bulk silicon layer (32) and complementary MOSFET (CMOS) transistors (36,38) fabricated thereon. The integrated circuit also includes a single transistor dynamic random access memory (1T DRAM) cell (212,214) arranged adjacent to and integrated with the bulk IC in a 3D configuration.

公开(公告)号：EP1835535A2

公开(公告)日：2007-09-19

申请号：EP07005406.9

申请日：2007-03-15

申请人： Marvell World Trade Ltd

发明人： Wu, Albert ,  Chen, Roawen

IPC分类号： H01L21/8242 ,  H01L27/108 ,  H01L27/06 ,  H01L29/786

CPC分类号： H01L27/108 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/10802 ,  H01L27/10844 ,  H01L27/10897 ,  H01L29/7841

摘要： An integrated circuit (210) includes a bulk technology integrated circuit (bulk IC) (30) including a bulk silicon layer (32) and complementary MOSFET (CMOS) transistors (36,38) fabricated thereon. The integrated circuit also includes a single transistor dynamic random access memory (1T DRAM) cell (212,214) arranged adjacent to and integrated with the bulk IC in a 3D configuration.

摘要翻译： 一种集成电路（210）包括：包括体硅层（32）和互补MOSFET（CMOS）晶体管（36,38）的本体技术集成电路（IC散装）（30）在其上制造。 因此，该集成电路包括一个单一的晶体管动态随机存取存储器布置成邻近和在3D结构与本体IC集成（1T DRAM）单元（212.214）。