公开(公告)号：EP4105966A2

公开(公告)日：2022-12-21

申请号：EP22179687.3

申请日：2016-09-08

申请人： Massachusetts Institute Of Technology

发明人： KIM, Jeehwan

IPC分类号： H01L21/02 ,  H01L23/532 ,  H01L29/04

摘要： A graphene-based layer transfer (GBLT) technique is disclosed. In this approach, a device layer including a III-V semiconductor, Si, Ge, III-N semiconductor, SiC, SiGe, or II-VI semiconductor is fabricated on a graphene layer, which in turn is disposed on a substrate. The graphene layer or the substrate can be lattice-matched with the device layer to reduce defect in the device layer. The fabricated device layer is then removed from the substrate via, for example, a stressor attached to the device layer. In GBLT, the graphene layer serves as a reusable and universal platform for growing device layers and also serves a release layer that allows fast, precise, and repeatable release at the graphene surface.

公开(公告)号：EP3613081A1

公开(公告)日：2020-02-26

申请号：EP18788160.2

申请日：2018-04-18

申请人： Massachusetts Institute Of Technology

发明人： LEE, Kyusang ,  KIM, Jeehwan

IPC分类号： H01L29/04 ,  H01L29/16 ,  H01L21/027 ,  H01L51/52 ,  H01L21/47 ,  H01L21/306 ,  H01L21/32 ,  H01L21/3213

公开(公告)号：EP3708065A1

公开(公告)日：2020-09-16

申请号：EP18875671.2

申请日：2018-11-08

申请人： Amorepacific Corporation ,  Massachusetts Institute Of Technology

发明人： HAN, Jiyeon ,  YEUN, Han-Wool ,  KIM, Eunjoo ,  KIM, Jeehwan ,  LEE, Kyusang ,  LEE, Haekwang

IPC分类号： A61B5/00

摘要： The present invention relates to a deformation sensor unit and to a skin sensor module comprising same. A deformation sensor unit according to one embodiment of the present invention comprises: a substrate which has a through hole formed therein and comprises a first electrode and a second electrode formed on one side and the other side of the through hole on one surface of the substrate; a piezoelectric element leading out from the first electrode and extending into the through hole; and a piezoelectric resistor which leads out from the second electrode and extends into the through hole and is formed so as to overlap with a section or the whole of the piezoelectric element.

公开(公告)号：EP3347914A1

公开(公告)日：2018-07-18

申请号：EP16845018.7

申请日：2016-09-08

申请人： Massachusetts Institute of Technology

发明人： KIM, Jeehwan

IPC分类号： H01L21/02 ,  H01L23/532 ,  H01L29/04

CPC分类号： H01L21/02444 ,  H01L21/02378 ,  H01L21/02425 ,  H01L21/02499 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/00

摘要： A graphene-based layer transfer (GBLT) technique is disclosed. In this approach, a device layer including a III-V semiconductor, Si, Ge, III-N semiconductor, SiC, SiGe, or II-VI semiconductor is fabricated on a graphene layer, which in turn is disposed on a substrate. The graphene layer or the substrate can be lattice-matched with the device layer to reduce defect in the device layer. The fabricated device layer is then removed from the substrate via, for example, a stressor attached to the device layer. In GBLT, the graphene layer serves as a reusable and universal platform for growing device layers and also serves a release layer that allows fast, precise, and repeatable release at the graphene surface.

公开(公告)号：EP4105966A3

公开(公告)日：2023-06-21

申请号：EP22179687.3

申请日：2016-09-08

申请人： Massachusetts Institute Of Technology

发明人： KIM, Jeehwan

IPC分类号： H01L21/02 ,  H01L23/532 ,  H01L29/04

摘要： A graphene-based layer transfer (GBLT) technique is disclosed. In this approach, a device layer including a III-V semiconductor, Si, Ge, III-N semiconductor, SiC, SiGe, or II-VI semiconductor is fabricated on a graphene layer, which in turn is disposed on a substrate. The graphene layer or the substrate can be lattice-matched with the device layer to reduce defect in the device layer. The fabricated device layer is then removed from the substrate via, for example, a stressor attached to the device layer. In GBLT, the graphene layer serves as a reusable and universal platform for growing device layers and also serves a release layer that allows fast, precise, and repeatable release at the graphene surface.

公开(公告)号：EP3867064A1

公开(公告)日：2021-08-25

申请号：EP19872794.3

申请日：2019-10-16

申请人： Massachusetts Institute of Technology

发明人： KIM, Jeehwan ,  KONG, Wei

IPC分类号： B32B37/26 ,  B32B9/04 ,  H01L21/02

公开(公告)号：EP3586368A1

公开(公告)日：2020-01-01

申请号：EP18757001.5

申请日：2018-02-23

申请人： Massachusetts Institute of Technology (MIT)

发明人： LEE, Kyusang ,  KONG, Wei ,  KIM, Jeehwan

IPC分类号： H01L29/02 ,  H01L33/26 ,  H01L33/36 ,  B32B38/10 ,  G09G3/32

公开(公告)号：EP3472839A1

公开(公告)日：2019-04-24

申请号：EP16906491.2

申请日：2016-12-22

申请人： Massachusetts Institute of Technology

发明人： KIM, Jeehwan ,  CHOI, Shinhyun

IPC分类号： G11C11/56 ,  B82B1/00 ,  B82B3/00 ,  G11C5/06 ,  G11C13/04 ,  H01H1/00 ,  H01H11/00