摘要:
A method of forming a conductive thick film pattern comprises the steps of filling grooves of an intaglio with a conductive ink, transferring the conductive ink in the grooves onto a blanket of which surface is coated with an elastic material, transferring and printing a conductive thick film pattern transferred on the blanket onto a substrate, firing the conductive pattern to scatter the organic matter, and sintering the conductive pattern. A conductive ink comprises conductive metal powder, glass frit, transition metal oxide, dispersing agent, and vehicle containing an organic binder comprising at least one of poly-iso-butyl methacrylate, poly-iso-propyl methacrylate, polymethyl methacrylate, poly-4-fluoroethylene, and poly-α-methyl styrene.
摘要:
A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.
摘要:
A pyroelectric infrared detector includes a substrate having a recess. A pyroelectric portion substantially aligns with the recess. A resin film is located between the substrate and the pyroelectric portion. The recess faces the resin film. First and second electrodes are connected to first and second surfaces of the pyroelectric portion respectively. The pyroelectric portion may include a pyroelectric film of Pb x La y Ti z Zr w O 3 where atomic fractions "w", "x", "y", and "z" satisfy one of following conditions a), b), and c):
a) 0.7≦x≦1, x+y=1 , 0.925≦z≦1, w=0 b) x=1, y=0, 0.45≦z z+w=1 c) 0.75≦x x+y=1 , 0.5≦z z+w=1
摘要翻译:热电型红外线检测器包括具有凹部的基板。 热电部分基本上与凹部对准。 树脂膜位于基板和热电部分之间。 凹部面向树脂膜。 第一和第二电极分别连接到热电部分的第一和第二表面。 热电部分可以包括Pb x L y Ti z Zr w O 3的热电膜,其中原子级分“w”,“x”,“y”和“z”满足以下条件a),b)和c)之一:a)0.7 < x = 1,x + y = 1,0.925 = z = 1,w = 0 b)x = 1,y = 0,0.45
摘要:
A piezoelectric element includes a first electrode (2); a piezoelectric layered film (10) composed of a first piezoelectric film (3) formed on the first electrode film and a second piezoelectric film (4) that is formed on the first piezoelectric film and is controlled in crystal orientation thereof by the first piezoelectric film; and a second electrode film (5) formed on the second piezoelectric film. Each of the first and second piezoelectric films is an aggregate of columnar grains grown unidirectionally along a thickness direction of the piezoelectric layered film. A columnar grain of the second piezoelectric film has a larger cross-sectional diameter than a columnar grain of the first piezoelectric film. A ratio l/d of the thickness l of the piezoelectric layered film to the cross-sectional diameter d of the second piezoelectric film is not less than 20 and not more than 60.
摘要:
To manufacture a compact and high-performance thin-film piezoelectric bimorph element at low cost, first and second piezoelectric thin films (2, 3) are formed by sputtering on the both surfaces of a metal thin plate (1) which are opposing relation to each other along the thickness thereof, while the respective states of polarizations of the first and second piezoelectric thin films (2, 3) are controlled. A pair of electrode films (5) are formed on the respective surfaces of the first and second piezoelectric thin films (2, 3) opposite to the metal thin plate (1) .
摘要:
A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.