Conductive ink composition and method of forming a conductive thick film pattern
    2.
    发明公开
    Conductive ink composition and method of forming a conductive thick film pattern 失效
    Leitende Tintenzusammensetzung und Verfahren zum Herstellen eines dickschichtigen Musters。

    公开(公告)号:EP0452118A1

    公开(公告)日:1991-10-16

    申请号:EP91303180.3

    申请日:1991-04-10

    IPC分类号: C09D11/08 B41M1/10

    CPC分类号: H05K1/092 C09D11/52 H01B1/22

    摘要: A method of forming a conductive thick film pattern comprises the steps of filling grooves of an intaglio with a conductive ink, transferring the conductive ink in the grooves onto a blanket of which surface is coated with an elastic material, transferring and printing a conductive thick film pattern transferred on the blanket onto a substrate, firing the conductive pattern to scatter the organic matter, and sintering the conductive pattern. A conductive ink comprises conductive metal powder, glass frit, transition metal oxide, dispersing agent, and vehicle containing an organic binder comprising at least one of poly-iso-butyl methacrylate, poly-iso-propyl methacrylate, polymethyl methacrylate, poly-4-fluoroethylene, and poly-α-methyl styrene.

    摘要翻译: 形成导电厚膜图案的方法包括以下步骤:用导电油墨填充凹版的凹槽,将凹槽中的导电油墨转移到其表面被弹性材料涂覆的毯子上,转印和印刷导电厚膜 在衬垫上转印到衬底上,烧制导电图案以散射有机物质,并烧结导电图案。 导电油墨包括导电金属粉末,玻璃料,过渡金属氧化物,分散剂和含有有机粘合剂的载体,该有机粘合剂包含甲基丙烯酸异丁酯,甲基丙烯酸异丙酯,聚甲基丙烯酸甲酯,聚甲基丙烯酸甲酯, 氟乙烯和聚-α-甲基苯乙烯。

    Thin film capacitor and method of manufacturing the same
    4.
    发明公开
    Thin film capacitor and method of manufacturing the same 无效
    薄膜电容器及其制造方法。

    公开(公告)号:EP0617439A3

    公开(公告)日:1997-10-15

    申请号:EP94104693.0

    申请日:1994-03-24

    IPC分类号: H01G4/20

    摘要: A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.

    Pyroelectric infrared detector and method of fabricating the same
    5.
    发明公开
    Pyroelectric infrared detector and method of fabricating the same 失效
    Pyroelektrischer infraroter Detektor und dessen Herstellungsverfahren

    公开(公告)号:EP0764990A1

    公开(公告)日:1997-03-26

    申请号:EP96118634.3

    申请日:1993-10-20

    IPC分类号: H01L37/02

    CPC分类号: H01L37/02

    摘要: A pyroelectric infrared detector includes a substrate having a recess. A pyroelectric portion substantially aligns with the recess. A resin film is located between the substrate and the pyroelectric portion. The recess faces the resin film. First and second electrodes are connected to first and second surfaces of the pyroelectric portion respectively. The pyroelectric portion may include a pyroelectric film of Pb x La y Ti z Zr w O 3 where atomic fractions "w", "x", "y", and "z" satisfy one of following conditions a), b), and c):

    a) 0.7≦x≦1, x+y=1 , 0.925≦z≦1, w=0
    b) x=1, y=0, 0.45≦z z+w=1
    c) 0.75≦x x+y=1 , 0.5≦z z+w=1

    摘要翻译: 热电型红外线检测器包括具有凹部的基板。 热电部分基本上与凹部对准。 树脂膜位于基板和热电部分之间。 凹部面向树脂膜。 第一和第二电极分别连接到热电部分的第一和第二表面。 热电部分可以包括Pb x L y Ti z Zr w O 3的热电膜,其中原子级分“w”,“x”,“y”和“z”满足以下条件a),b)和c)之一:a)0.7 < x = 1,x + y = 1,0.925

    Thin film capacitor and method of manufacturing the same
    10.
    发明公开
    Thin film capacitor and method of manufacturing the same 无效
    Dünnschichtkondensator和Herstellungsverfahren。

    公开(公告)号:EP0617439A2

    公开(公告)日:1994-09-28

    申请号:EP94104693.0

    申请日:1994-03-24

    IPC分类号: H01G4/20

    摘要: A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.

    摘要翻译: 取向为(100)面的NaCl氧化物薄层或朝向(100)面的尖晶石氧化物薄层,朝向(100)面的钙钛矿电介质薄层和金属电极依次层压在金属电极上,从而提供 薄膜电容器。 或者,通过依次层叠取向于(100)面的氧化锌薄膜或朝向(100)面取向的尖晶石氧化物薄层,将铂薄层作为朝向(100)面的下电极而制造薄膜电容器 取向为(100)面的钙钛矿电介质薄层和在基板上作为上部电极的金属薄层。 应用等离子体增强CVD法来形成NaCl氧化物薄层,尖晶石氧化物薄层和钙钛矿电介质薄层,同时将真空沉积法,溅射法,CVD法或等离子体增强CVD法应用于 形成金属电极。