公开(公告)号：EP3107116B1

公开(公告)日：2018-12-26

申请号：EP15748537.6

申请日：2015-01-13

申请人： NGK Insulators, Ltd.

发明人： MIYAZAWA Sugio ,  IWASAKI Yasunori ,  TAKAGAKI Tatsuro ,  IDE Akiyoshi ,  NAKANISHI Hirokazu

IPC分类号： H01L21/02

CPC分类号： H01L29/16 ,  C04B35/115 ,  C04B35/6264 ,  C04B35/632 ,  C04B35/634 ,  C04B37/001 ,  C04B37/005 ,  C04B37/008 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/6023 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/662 ,  C04B2235/786 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/08 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/36 ,  C04B2237/52 ,  C04B2237/588 ,  C30B29/06 ,  C30B33/06 ,  H01L21/2007 ,  H01L29/0649 ,  Y10T428/24355

摘要： A handle substrate of a composite substrate for a semiconductor is provided. The handle substrate is composed of polycrystalline alumina. The handle substrate includes an outer peripheral edge part with an average grain size of 20 to 55 µm and a central part with an average grain size of 10 to 50 µm. The average grain size of the outer peripheral edge part is 1.1 times or more and 3.0 times or less of that of the central part of the handle substrate.

公开(公告)号：EP3405443A1

公开(公告)日：2018-11-28

申请号：EP17741847.2

申请日：2017-01-18

申请人： Unifrax I LLC

发明人： ZHAO, Donghui ,  ZOITOS, Bruce, K. ,  ANDREJCAK, Michael, J. ,  HAMILTON, Jason, M.

IPC分类号： C03C13/06 ,  C03C3/085 ,  C03C3/087 ,  C03C4/00

CPC分类号： C03C13/06 ,  C03C13/00 ,  C04B35/6224 ,  C04B2235/3206 ,  C04B2235/3241 ,  C04B2235/5264 ,  C04B2235/72 ,  C04B2235/96 ,  C04B2235/9615 ,  C04B2235/9669 ,  D01F9/08 ,  D10B2101/08

摘要： An inorganic fiber containing silica and magnesia as the major fiber components and which further includes an intended chromium oxide additive to improve the dimensional stability of the fiber. The inorganic fiber exhibits good thermal insulation performance at 1400° C. and greater, retains mechanical integrity after exposure to the use temperature, and which remains soluble in physiological fluids. Also provided are thermal insulation product forms that are made from a plurality of the inorganic fibers, methods of preparing the inorganic fiber, and methods of thermally insulating articles using thermal insulation prepared from a plurality of the inorganic fibers.

公开(公告)号：EP3113586B1

公开(公告)日：2018-11-28

申请号：EP15754711.8

申请日：2015-02-20

申请人： NGK Insulators, Ltd.

发明人： TAKAGAKI, Tatsuro ,  IWASAKI, Yasunori ,  MIYAZAWA, Sugio ,  IDE, Akiyoshi ,  NAKANISHI, Hirokazu

IPC分类号： H05K1/03 ,  C04B35/111 ,  H05K3/00

CPC分类号： H05K1/115 ,  C04B35/111 ,  C04B35/119 ,  C04B35/634 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3281 ,  C04B2235/3418 ,  C04B2235/6023 ,  C04B2235/606 ,  C04B2235/612 ,  C04B2235/6582 ,  C04B2235/662 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/95 ,  H01B3/12 ,  H01B17/56 ,  H05K1/03 ,  H05K1/0306 ,  H05K3/00 ,  H05K3/0014 ,  H05K3/0029 ,  H05K2201/09009 ,  Y10T428/24273

摘要： It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 µ m, and a diameter of the through hole is 20 to 100 µ m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 µ m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 µ m.

公开(公告)号：EP2482397B1

公开(公告)日：2018-11-07

申请号：EP10818534.9

申请日：2010-09-13

申请人： NGK SPARK PLUG CO., LTD.

发明人： SUZUKI, Akira ,  TAKAOKA, Katsuya ,  HONDA, Toshitaka ,  KURONO, Hirokazu

IPC分类号： H01T13/38 ,  C04B35/117 ,  H01T13/20

CPC分类号： H01T13/39 ,  C04B35/117 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/5436 ,  C04B2235/77 ,  C04B2235/85 ,  H01T21/02

摘要： The present invention relates to a spark plug having good combustible-gas ignitability even when the spark plug is downsized and to a method for high-yield manufacturing of a spark plug with good combustible-gas ignitability. There is provided according to one aspect of the present invention a spark plug 1 having a center electrode 2, an insulator 3 and a metal shell 4 and satisfying the following conditions (1) to (5). There is provided according to another aspect of the present invention a manufacturing method of a spark plug including the step of producing an insulator by preparing a raw material powder in such a manner that the particle size distribution ratio (90% volume diameter/10% volume diameter) between particles of 10% volume diameter and particles of 90% volume diameter in the raw material powder is 3.6 to 5.2, and then, press-forming and sintering the prepared raw material powder. Condition (1): The insulator has a wall thickness T of 0.3 to 1.1 mm at an imaginary plane including a front end face of the metal shell. Condition (2): A region of the insulator extending from a front end of the insulator to at least 2 mm rear from the imaginary plane is formed of an alumina-based sintered body containing a Si component, a rare earth element component and at least two kinds of Group 2 element components and being substantially free from a B component. Condition (3): The mass ratio R RE of a mass of the rare earth element component to a total mass of the Si component, the Group 2 element components and the rare earth element component in the alumina-based sintered body is 0.15 to 0.45. Condition (4): The mass ratio R 2 of a total mass of the components of the Group 2 elements to a mass of the Si component in the alumina-based sintered body is 0.25 or greater. Condition (5): The alumina-based sintered body includes, in a grain boundary phase thereof, an aluminate crystal containing the rare earth element component.

公开(公告)号：EP3395780A1

公开(公告)日：2018-10-31

申请号：EP18151617.0

申请日：2018-01-15

申请人： Kyocera Corporation

发明人： KIRIKIHIRA, Isamu

IPC分类号： C04B35/584 ,  H01L23/15 ,  H01L23/373

CPC分类号： H05K1/0306 ,  C04B35/14 ,  C04B35/584 ,  C04B2235/3206 ,  C04B2235/3224 ,  C04B2235/85 ,  C04B2237/32 ,  H01L23/15 ,  H01L23/3731

摘要： There are provided a ceramic substrate and so on including: a silicon nitride crystal phase containing a plurality of silicon nitride crystals, and grain boundaries between the silicon nitride crystals; and a silicate phase containing magnesium silicate crystals and rare earth silicate crystals, respective maximum particle sizes of the magnesium silicate crystals and the rare earth silicate crystals being smaller than that of the silicon nitride crystals, the silicate phase being positioned in the grain boundaries.

公开(公告)号：EP2728634B1

公开(公告)日：2018-10-03

申请号：EP13004974.5

申请日：2013-10-17

申请人： Canon Kabushiki Kaisha

发明人： Koyama, Shinya ,  Shimizu, Yasushi ,  Kubota, Makoto ,  Uebayashi, Akira ,  Tanaka, Hidenori

IPC分类号： H01L41/187 ,  H01L41/083 ,  C04B35/468 ,  B08B7/02 ,  B41J2/14 ,  G02B7/10 ,  H02N2/10 ,  H02N2/16

CPC分类号： H01L41/1871 ,  B08B7/02 ,  B41J2/14233 ,  B41J2/14274 ,  B41J2202/03 ,  C04B35/4682 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3236 ,  C04B2235/3244 ,  C04B2235/3248 ,  C04B2235/3262 ,  C04B2235/5445 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/78 ,  C04B2235/786 ,  C04B2235/79 ,  C04B2235/80 ,  G02B27/0006 ,  H01L41/083 ,  H01L41/0973 ,  H02N2/106 ,  H02N2/163 ,  H04N5/2254

摘要： Provided is a lead-free piezoelectric material having satisfactory and stable piezoelectric constant and mechanical quality factor in a wide temperature range. The piezoelectric material includes a perovskite-type metal oxide (Ba 1-x Ca x ) a (Ti 1-y Zr y )O 3 , wherein 1.00 ‰¤ a ‰¤ 1.01, 0.125 ‰¤ x ‰¤ 0.300, 0.041 ‰¤ y ‰¤ 0.074, containing Mn and Mg. The Mn content is from 0.12 to 0.40 weight % of the perovskite-type metal oxide on a metal basis. The Mg content is less than 0.10 weight % of the perovskite-type metal oxide on a metal basis.

公开(公告)号：EP2413441B1

公开(公告)日：2018-09-26

申请号：EP10755596.3

申请日：2010-03-09

申请人： NGK SPARK PLUG CO., LTD.

发明人： KURONO, Hirokazu ,  HONDA, Toshitaka ,  TAKAOKA, Katsuya ,  TAKEUCHI, Hiroki ,  TANAKA, Kuniharu ,  MITSUOKA, Takeshi

IPC分类号： H01T13/38 ,  C04B35/111

CPC分类号： C04B35/113 ,  C04B35/117 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/80 ,  C04B2235/96 ,  H01T13/38

摘要： To provide a spark plug having an insulator which exhibits a satisfactory withstand voltage characteristic and sufficient mechanical strength in a high temperature environment exceeding 700°C. The invention provides a spark plug 1 having a center electrode 2, an insulator 3, and a ground electrode 6, characterized in that the insulator 3 is formed of an alumina-based sintered material containing an Si component, a Group 2 element (2A) component, and a rare earth element (RE) component; that the alumina-based sintered material has an RE-²-alumina crystal phase; and that the mean crystal grain size D A (RE) of the RE-²-alumina crystal phase and that of alumina D A (Al) satisfy the following relationship (1): 0.2‰¤D A (RE)/D A (Al)‰¤3.0.

公开(公告)号：EP2726262B1

公开(公告)日：2018-09-19

申请号：EP12731557.0

申请日：2012-06-11

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： SERVANT, Florence ,  BAILLEUX, Michel

IPC分类号： B22F3/22 ,  C04B35/486 ,  C04B35/626 ,  C04B35/634 ,  C04B35/638 ,  C04B35/64 ,  B28B1/24

CPC分类号： C04B35/64 ,  B22F3/225 ,  B22F2998/10 ,  B28B1/24 ,  C04B35/486 ,  C04B35/62655 ,  C04B35/62675 ,  C04B35/63408 ,  C04B35/63488 ,  C04B35/638 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3272 ,  C04B2235/528 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/6022 ,  C04B2235/6562 ,  C04B2235/77 ,  C04B2235/9615 ,  C04B2235/9661 ,  B22F1/0062 ,  B22F3/1017 ,  B22F9/04 ,  B22F9/08

公开(公告)号：EP2525398B1

公开(公告)日：2018-09-05

申请号：EP11732925.0

申请日：2011-01-13

申请人： Kyocera Corporation

发明人： ISHIMINE,Yuusaku ,  MORIYAMA,Masayuki ,  KOMATSUBARA,Kenji

IPC分类号： H01L23/15 ,  H01L23/13 ,  H01L23/373 ,  H05K1/02 ,  H05K1/03 ,  C04B35/587 ,  H01L35/32 ,  C04B37/02 ,  H05K3/38

CPC分类号： H01L23/13 ,  C04B35/587 ,  C04B37/026 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3878 ,  C04B2235/3882 ,  C04B2235/5276 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/6581 ,  C04B2235/6582 ,  C04B2235/6587 ,  C04B2235/721 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/945 ,  C04B2235/9607 ,  C04B2237/125 ,  C04B2237/368 ,  C04B2237/407 ,  C04B2237/74 ,  H01L23/15 ,  H01L23/3731 ,  H01L23/3735 ,  H01L35/32 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/38 ,  H05K2201/0248 ,  H05K2201/0266 ,  H05K2201/0269 ,  Y10T428/24413 ,  Y10T428/24421 ,  Y10T428/25 ,  Y10T428/259 ,  H01L2924/00

摘要： Provided is a silicon nitride substrate capable of enhancing the bond strength when a member made of a metal is bonded to the substrate, and a circuit substrate and an electronic device capable of improving reliability by using the silicon nitride substrate. The silicon nitride substrate 1 comprises a substrate 1a comprising a silicon nitride sintered body, and a plurality of granular bodies 1b containing silicon and integrated to a principal surface of the substrate 1a, wherein a plurality of needle crystals 1c or column crystals 1d comprising mainly silicon nitride are extended from a portion of the granular bodies 1b. A brazing material is applied to a principal surface of the substrate 1a, and a circuit member and a heat radiation member are arranged on the applied brazing material, and bonded by heating. Because of a plurality of granular bodies 1b integrated to the principal surface of the substrate 1a, and a plurality of the needle crystals 1c or the column crystals 1d extended from a portion of the granular bodies 1b, a high anchor effect is produced so that the circuit member and the heat radiation member are firmly bonded to the silicon nitride substrate 1.

公开(公告)号：EP2877437B1

公开(公告)日：2018-08-15

申请号：EP13725340.7

申请日：2013-05-23

申请人： Refratechnik Holding GmbH

发明人： JANSEN, Helge

IPC分类号： C04B35/624 ,  C04B35/63 ,  C04B35/66 ,  C04B35/043 ,  F27D1/00

CPC分类号： C04B35/66 ,  C04B35/043 ,  C04B35/624 ,  C04B35/6316 ,  C04B2235/3206 ,  C04B2235/3418 ,  C04B2235/3445 ,  C04B2235/3826 ,  C04B2235/5409 ,  C04B2235/5427 ,  C04B2235/5454 ,  C04B2235/5463 ,  C04B2235/5481 ,  C04B2235/608 ,  C04B2235/656 ,  C04B2235/6583 ,  C04B2235/96 ,  F27D1/0006 ,  F27D1/003