公开(公告)号：EP1368830B1

公开(公告)日：2019-08-28

申请号：EP02728437.1

申请日：2002-03-12

申请人： Micron Technology, Inc.

发明人： DOAN, Trung, T. ,  LEE, Roger ,  KELLER, Dennis ,  SANDHU, Gurtej ,  EARL, Ren

IPC分类号： H01L21/8246 ,  H01L27/22 ,  H01L43/12 ,  B82Y10/00

公开(公告)号：EP1382059A2

公开(公告)日：2004-01-21

申请号：EP02731519.1

申请日：2002-04-26

申请人： MICRON TECHNOLOGY, INC.

发明人： DURCAN, Mark, D. ,  LEE, Roger

IPC分类号： H01L21/00

CPC分类号： H01L27/10876 ,  H01L27/10811 ,  H01L27/10823 ,  H01L29/66621 ,  H01L29/7834

摘要： A method of forming memory devices, such as DRAM access transistors, having recessed gate structures is disclosed. Field oxide areas for isolation are first formed over a semiconductor substrate subsequent to which transistor grooves are patterned and etched in a silicon nitride layer. The field oxide areas adjacent to the transistor grooves are then recessed, so that subsequently deposited polysilicon for gate structure formation can be polished relative to the adjacent and elevated silicon nitride.

公开(公告)号：EP1382067A2

公开(公告)日：2004-01-21

申请号：EP02736615.2

申请日：2002-04-26

申请人： MICRON TECHNOLOGY, INC.

发明人： DURCAN, D., Mark ,  SANDHU, Gurtej ,  DOAN, Trung, T. ,  LEE, Roger ,  KELLER, Dennis ,  EARL, Ren

IPC分类号： H01L21/8246 ,  H01L27/22

CPC分类号： H01L27/222

摘要： A method of forming minimally spaced MRAM structures is disclosed. A photolithography technique is employed to define masking patterns, on the sidewalls of which spacers are subsequently formed to reduce the distance between any of the two adjacent masking patterns. A filler material is next used to fill in the space around the masking patterns and to form filler plugs. The masking patterns and the spacers are removed using the filler plugs as a hard mask. Digit and word lines of MRAM structures are subsequently formed.

公开(公告)号：EP1368830A2

公开(公告)日：2003-12-10

申请号：EP02728437.1

申请日：2002-03-12

申请人： MICRON TECHNOLOGY, INC.

发明人： DOAN, Trung, T. ,  LEE, Roger ,  KELLER, Dennis ,  SANDHU, Gurtej ,  EARL, Ren

IPC分类号： H01L21/8246 ,  H01L27/22

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/222

摘要： This invention pertains to a method of fabricating a trenchless MRAM structure and to the resultant MRAM structure. The MRAM structure of the invention has a pinned layer formed within protective sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.

摘要翻译： 本发明涉及一种制造无沟槽MRAM结构的方法以及由此产生的MRAM结构。 本发明的MRAM结构具有形成在衬底上形成的保护侧壁内的钉扎层。 保护侧壁有利于通过自对准工艺形成MRAM结构。