公开(公告)号：EP1660698B1

公开(公告)日：2008-06-04

申请号：EP04781653.3

申请日：2004-08-18

申请人： Micron Technology, Inc.

发明人： ZHENG, Lingyi, A. ,  DOAN, Trung, T. ,  BREINER, Lyle, D. ,  PING, Er-Xuan ,  WEIMER, Ronald, A. ,  KUBISTA, David, J. ,  BEAMAN, Kevin, L. ,  BASCERI, Cem

IPC分类号： C23C16/458

CPC分类号： C23C16/4583 ,  C23C16/45546 ,  C23C16/45578 ,  Y10S206/832

摘要： The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature workpieces. This workpiece holder includes a plurality of workpiece supports and a gas distributor. The workpiece supports are adapted to support a plurality of microfeature workpieces in a spaced-apart relationship to define a process space adjacent a surface of each microfeature workpiece. The gas distributor includes an inlet and a plurality of outlets, with each of the outlets positioned to direct a flow of process gas into one of the process spaces.

公开(公告)号：EP1073877A1

公开(公告)日：2001-02-07

申请号：EP99920030.6

申请日：1999-04-26

申请人： MICRON TECHNOLOGY, INC.

发明人： DOAN, Trung, T.

IPC分类号： G01B11/06 ,  H01L21/3105 ,  B24B49/04

CPC分类号： B24B37/013 ,  B24B49/12 ,  G01B11/026 ,  G01B11/0608 ,  G01B11/0683 ,  H01L21/30625 ,  H01L22/26

摘要： An endpoint detector and performance monitoring system for quickly and accurately measuring the change in thickness of a wafer and other planarizing parameters in chemical-mechanical polishing processes. In one embodiment, an endpoint detector has a reference platform, a measuring face, and a distance measuring device. The reference platform is positioned proximate to the wafer carrier, and the reference platform and measuring device are positioned apart from one another by a known, constant distance. The measuring face is fixedly positioned with respect to the wafer carrier at a location that allows the measuring device to engage the measuring face when the wafer is positioned on the reference platform. Each time the measuring device engages the measuring surface, it measures the displacement of the measuring face with respect to the measuring device. The displacement of the measuring face is proportional to the change in thickness of the wafer between measurements. In another embodiment, a planarizing machine has a flat plate, a planarizing medium fastened to the plate, a carrier assembly to manipulate a substrate holder over the planarizing medium, and a non-contact distance measuring device. The non-contact distance measuring device measures the actual elevation of the substrate holder as the substrate holder engages a substrate with the planarizing medium and relative motion occurs between the substrate holder and the planarizing medium. The performance monitoring system uses the actual pad elevation to determine the endpoint, the polishing rate and other CMP operating parameters.

公开(公告)号：EP1021824A1

公开(公告)日：2000-07-26

申请号：EP98924839.8

申请日：1998-05-21

申请人： MICRON TECHNOLOGY, INC.

发明人： DOAN, Trung, T. ,  BLALOCK, Guy, T. ,  DURCAN, Mark ,  MEIKLE, Scott, G.

IPC分类号： H01L21/302 ,  B05D3/00 ,  B05D3/12 ,  H01B13/00 ,  B44C1/22 ,  H01L21/3105 ,  H01L21/768

CPC分类号： H01L21/31053

摘要： A method of manufacturing semiconductor devices using an improved chemical mechanical planarization processes for the planarization of the surfaces (24) of the wafer (60) on which the semiconductor devices (22) are formed. The improved chemical mechanical planarization process includes the formation of a flat planar surface from a deformable coating (30) on the surface of the wafer filling in between the surface irregularities prior to the planarization of the surface through chemical mechanical planarization process.

摘要翻译： 一种使用改进的化学机械平坦化工艺制造半导体器件的方法，用于平坦化在其上形成半导体器件（22）的晶片（60）的表面（24）。 改进的化学机械平坦化工艺包括在通过化学机械平坦化工艺对表面进行平面化之前填充在表面不规则处之间的晶片表面上的可变形涂层（30）形成平坦平坦表面。

公开(公告)号：EP1368830B1

公开(公告)日：2019-08-28

申请号：EP02728437.1

申请日：2002-03-12

申请人： Micron Technology, Inc.

发明人： DOAN, Trung, T. ,  LEE, Roger ,  KELLER, Dennis ,  SANDHU, Gurtej ,  EARL, Ren

IPC分类号： H01L21/8246 ,  H01L27/22 ,  H01L43/12 ,  B82Y10/00

公开(公告)号：EP1660698A1

公开(公告)日：2006-05-31

申请号：EP04781653.3

申请日：2004-08-18

申请人： MICRON TECHNOLOGY, INC.

发明人： ZHENG, Lingyi, A. ,  DOAN, Trung, T. ,  BREINER, Lyle, D. ,  PING, Er-Xuan ,  WEIMER, Ronald, A. ,  KUBISTA, David, J. ,  BEAMAN, Kevin, L. ,  BASCERI, Cem

IPC分类号： C23C16/458

CPC分类号： C23C16/4583 ,  C23C16/45546 ,  C23C16/45578 ,  Y10S206/832

摘要： The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature workpieces. This workpiece holder includes a plurality of workpiece supports and a gas distributor. The workpiece supports are adapted to support a plurality of microfeature workpieces in a spaced-apart relationship to define a process space adjacent a surface of each microfeature workpiece. The gas distributor includes an inlet and a plurality of outlets, with each of the outlets positioned to direct a flow of process gas into one of the process spaces.

公开(公告)号：EP1335998B1

公开(公告)日：2004-11-10

申请号：EP01985952.9

申请日：2001-08-22

申请人： MICRON TECHNOLOGY, INC.

发明人： SANDHU, Gurtej ,  DOAN, Trung, T.

IPC分类号： C30B31/00

CPC分类号： H01L21/67167 ,  H01L21/2254 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67213 ,  H01L21/67745

摘要： An improved atomic layer doping apparatus is disclosed as having multiple doping regions in which individual monolayer species are first deposited and then dopant atoms contained therein are diffused into the substrate. Each doping region is chemically separated from adjacent doping regions. A loading assembly is programmed to follow pre-defined transfer sequences for moving semiconductor substrates into and out of the respective adjacent doping regions. According to the number of doping regions provided, a plurality of substrates could be simultaneously processed and run through the cycle of doping regions until a desired doping profile is obtained.

公开(公告)号：EP1335998A2

公开(公告)日：2003-08-20

申请号：EP01985952.9

申请日：2001-08-22

申请人： MICRON TECHNOLOGY, INC.

发明人： SANDHU, Gurtej ,  DOAN, Trung, T.

IPC分类号： C30B31/00

CPC分类号： H01L21/67167 ,  H01L21/2254 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67213 ,  H01L21/67745

摘要： An improved atomic layer doping apparatus is disclosed as having multiple doping regions in which individual monolayer species are first deposited and then dopant atoms contained therein are diffused into the substrate. Each doping region is chemically separated from adjacent doping regions. A loading assembly is programmed to follow pre-defined transfer sequences for moving semiconductor substrates into and out of the respective adjacent doping regions. According to the number of doping regions provided, a plurality of substrates could be simultaneously processed and run through the cycle of doping regions until a desired doping profile is obtained.

公开(公告)号：EP1382067A2

公开(公告)日：2004-01-21

申请号：EP02736615.2

申请日：2002-04-26

申请人： MICRON TECHNOLOGY, INC.

发明人： DURCAN, D., Mark ,  SANDHU, Gurtej ,  DOAN, Trung, T. ,  LEE, Roger ,  KELLER, Dennis ,  EARL, Ren

IPC分类号： H01L21/8246 ,  H01L27/22

CPC分类号： H01L27/222

摘要： A method of forming minimally spaced MRAM structures is disclosed. A photolithography technique is employed to define masking patterns, on the sidewalls of which spacers are subsequently formed to reduce the distance between any of the two adjacent masking patterns. A filler material is next used to fill in the space around the masking patterns and to form filler plugs. The masking patterns and the spacers are removed using the filler plugs as a hard mask. Digit and word lines of MRAM structures are subsequently formed.

公开(公告)号：EP1021824B1

公开(公告)日：2003-12-17

申请号：EP98924839.8

申请日：1998-05-21

申请人： MICRON TECHNOLOGY, INC.

发明人： DOAN, Trung, T. ,  BLALOCK, Guy, T. ,  DURCAN, Mark ,  MEIKLE, Scott, G.

IPC分类号： H01L21/302 ,  B05D3/00 ,  B05D3/12 ,  H01B13/00 ,  B44C1/22 ,  H01L21/3105 ,  H01L21/768

CPC分类号： H01L21/31053

摘要： A method of manufacturing semiconductor devices using an improved chemical mechanical planarization processes for the planarization of the surfaces (24) of the wafer (60) on which the semiconductor devices (22) are formed. The improved chemical mechanical planarization process includes the formation of a flat planar surface from a deformable coating (30) on the surface of the wafer filling in between the surface irregularities prior to the planarization of the surface through chemical mechanical planarization process.

公开(公告)号：EP1368830A2

公开(公告)日：2003-12-10

申请号：EP02728437.1

申请日：2002-03-12

申请人： MICRON TECHNOLOGY, INC.

发明人： DOAN, Trung, T. ,  LEE, Roger ,  KELLER, Dennis ,  SANDHU, Gurtej ,  EARL, Ren

IPC分类号： H01L21/8246 ,  H01L27/22

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/222

摘要： This invention pertains to a method of fabricating a trenchless MRAM structure and to the resultant MRAM structure. The MRAM structure of the invention has a pinned layer formed within protective sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.

摘要翻译： 本发明涉及一种制造无沟槽MRAM结构的方法以及由此产生的MRAM结构。 本发明的MRAM结构具有形成在衬底上形成的保护侧壁内的钉扎层。 保护侧壁有利于通过自对准工艺形成MRAM结构。