公开(公告)号：EP1667219A1

公开(公告)日：2006-06-07

申请号：EP04772042.0

申请日：2004-08-24

申请人： Mimasu Semiconductor Industry Company Limited

发明人： UCHIDA, T., c/o Mimasu Semiconductor Ind. Co., Ltd ,  IIJIMA, K., c/o Mimasu Semiconductor Ind. Co., Ltd ,  YAMAZAKI, T., c/o Mimasu Semiconductor Ind. Co Ltd ,  TOMARU, S., c/o Mimasu Semiconductor Ind. Co., Ltd ,  MARUYAMA, F., c/o Mimasu Semiconductor Ind. Co Ltd

IPC分类号： H01L21/322

CPC分类号： H01L21/02079 ,  H01L21/02032 ,  H01L21/3221

摘要： The present invention is a method for reclaiming a silicon wafer in which a thin film has been formed on its surface, at least, comprising a thin-film removing step for removing the thin film having been formed on the silicon wafer and a mirror-polishing step for mirror-polishing at least one side of the thin-film-removed silicon wafer, wherein, before performing the mirror-polishing step, gettering-site forming treatment for applying damage load to at least one side of the silicon wafer is performed and then the silicon wafer is subjected to heat treatment, thereby impurities inside the silicon wafer are reduced. Thereby, there is provided a method for reclaiming a silicon wafer, in which a thin film such as a metal thin film having been formed on a silicon wafer can be removed, and impurities having diffused inside the wafer can be also reduced, thereby silicon wafers having very little metal contamination can be stably obtained.

摘要翻译： 本发明是一种用于回收在其表面上形成薄膜的硅晶片的方法，至少包括用于去除在硅晶片上形成的薄膜的薄膜去除步骤和镜面抛光 在进行镜面抛光步骤之前，进行用于对硅晶片的至少一面施加损伤载荷的吸杂位置形成处理，进行用于对去除薄膜的硅晶片的至少一侧进行镜面抛光的步骤， 然后对硅晶片进行热处理，从而减小硅晶片内的杂质。 因此，提供了一种用于回收硅晶片的方法，其中可以除去已经形成在硅晶片上的诸如金属薄膜的薄膜，并且还可以减少在晶片内扩散的杂质，从而硅晶片 可以稳定地获得金属污染很少。