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公开(公告)号:EP2631255B1
公开(公告)日:2020-03-18
申请号:EP11834363.1
申请日:2011-10-18
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2.
公开(公告)号:EP2631255A1
公开(公告)日:2013-08-28
申请号:EP11834363.1
申请日:2011-10-18
发明人: IKEMOTO, Makoto , KAWASE, Yasuhiro , MURASE, Tomohide , TAKAHASHI, Makoto , HIRAI, Takayoshi , KAMIMURA, Iho
CPC分类号: H01L23/18 , C08L63/00 , C09D163/00 , H01L24/13 , H01L24/83 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/00
摘要: To provide an interlayer filler composition which, in 3D lamination of semiconductor device chips, forms a highly thermally conductive filling interlayer simultaneously with the bonding of solder bumps or the like and lands between semiconductor device chips, a coating fluid and a process for producing a three-dimensional integrated circuit.
An interlayer filler composition for a three-dimensional integrated circuit, which comprises a resin (A) having a melt viscosity at 120°C of at most 100 Pa·s and a flux (B), the content of the flux (B) being at least 0.1 part by weight and at most 10 parts by weight per 100 parts by weight of the resin (A), or comprises a resin (A) having a melt viscosity at 120°C of at most 100 Pa·s and a coefficient of thermal conductivity of at least 0.2 W/mK, an inorganic filler (C) having a coefficient of thermal conductivity of at least 2 W/mK, a volume average particle size of at least 0.1 µm and at most 5 µm and a maximum volume particle size of at most 10 µm, and a curing agent (D) and/or a flux (B).摘要翻译: 以提供在层间填充物组合物,其在半导体器件芯片的三维层压,同时形成高导热填充层间有焊料凸点的接合或半导体器件芯片之间等和土地,涂布液和用于产生三个过程 维集成电路。 对于一个三维芯片,其包含树脂(A),其具有至多100帕·秒,在120℃的熔融粘度和焊剂(B),通量(B)的含量的层间填料组合物,其 至少0.1重量份和至多10重量份每100重量份所述树脂(A)的,或包含树脂(A),其具有在120℃的熔融粘度为100Pa·s以下,系数 至少0.2W / mK的,具有至少2个W / mK的,至少0.1微米,至多5微米的体积平均粒径和最大体积的热导率的系数的无机填料(C)的热导率的 至多10微米的颗粒大小,和固化剂(D)和/或通量(B)。
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